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Wen Wan (万闻)
Wen Wan (万闻)
Shanghai University (CN), DIPC(Spain), Xiamen University(CN).
Verified email at stu.xmu.edu.cn
Title
Cited by
Cited by
Year
Absence of Ferromagnetism in VSe2 Caused by Its Charge Density Wave Phase
AO Fumega, M Gobbi, P Dreher, W Wan, C González-Orellana, ...
The Journal of Physical Chemistry C 123 (45), 27802-27810, 2019
1122019
Interlayer coupling of a direct van der Waals epitaxial MoS 2/graphene heterostructure
W Wan, X Li, X Li, B Xu, L Zhan, Z Zhao, P Zhang, SQ Wu, Z Zhu, ...
RSC advances 6 (1), 323-330, 2016
452016
A homogeneous p–n junction diode by selective doping of few layer MoSe 2 using ultraviolet ozone for high-performance photovoltaic devices
X Zheng, Y Wei, J Liu, S Wang, J Shi, H Yang, G Peng, C Deng, W Luo, ...
Nanoscale 11 (28), 13469-13476, 2019
422019
Proximity Effects on the Charge Density Wave Order and Superconductivity in Single-Layer NbSe2
P Dreher, W Wan, A Chikina, M Bianchi, H Guo, R Harsh, S Mañas-Valero, ...
ACS nano 15 (12), 19430-19438, 2021
392021
Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC (0001)
W Wan, H Li, H Huang, SL Wong, L Lv, Y Gao, ATS Wee
ACS nano 8 (1), 970-976, 2014
252014
MoS2 materials synthesized on SiO2/Si substrates via MBE
L Zhan, W Wan, Z Zhu, TM Shih, W Cai
Journal of Physics: Conference Series 864 (1), 012037, 2017
222017
Observation of Superconducting Collective Modes from Competing Pairing Instabilities in Single‐Layer NbSe2
W Wan, P Dreher, D Muñoz‐Segovia, R Harsh, H Guo, ...
Advanced Materials 34 (41), 2206078, 2022
212022
Temperature‐Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures
W Wan, L Zhan, B Xu, F Zhao, Z Zhu, Y Zhou, Z Yang, T Shih, W Cai
Small 13 (15), 1603549, 2017
202017
Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers
F Calavalle, P Dreher, AP Surdendran, W Wan, M Timpel, R Verucchi, ...
Nano letters 21 (1), 136-143, 2020
192020
Magnetic correlations in single-layer NbSe2
S Divilov, W Wan, P Dreher, E Bölen, D Sánchez-Portal, MM Ugeda, ...
Journal of Physics: Condensed Matter 33 (29), 295804, 2021
182021
Syntheses and bandgap alterations of MoS2 induced by stresses in graphene-platinum substrates
W Wan, L Chen, L Zhan, Z Zhu, Y Zhou, T Shih, S Guo, J Kang, H Huang, ...
Carbon 131, 26-30, 2018
132018
Ni foam assisted synthesis of high quality hexagonal boron nitride with large domain size and controllable thickness
H Ying, X Li, D Li, M Huang, W Wan, Q Yao, X Chen, Z Wang, Y Wu, ...
2D Materials 5 (2), 025020, 2018
132018
Centimeter-Scale Nearly Single-Crystal Monolayer MoS2 via Self-Limiting Vapor Deposition Epitaxy
L Zhan, W Wan, Z Zhu, Y Xu, TM Shih, C Zhang, W Lin, X Li, Z Zhao, ...
The Journal of Physical Chemistry C 121 (8), 4703-4707, 2017
132017
An etching phenomenon exhibited by chemical vapor deposited graphene on a copper pocket
Z Zhao, X Chen, C Zhang, W Wan, Z Shan, B Tian, Q Li, H Ying, P Zhuang, ...
Carbon 106, 279-283, 2016
122016
Nontrivial Doping Evolution of Electronic Properties in Ising‐Superconducting Alloys
W Wan, D Wickramaratne, P Dreher, R Harsh, II Mazin, MM Ugeda
Advanced Materials 34 (26), 2200492, 2022
102022
Evidence for ground state coherence in a two-dimensional Kondo lattice
W Wan, R Harsh, A Meninno, P Dreher, S Sajan, H Guo, I Errea, ...
Nature communications 14 (1), 7005, 2023
62023
Superconducting dome by tuning through a van Hove singularity in a two-dimensional metal
W Wan, R Harsh, P Dreher, F de Juan, MM Ugeda
npj 2D Materials and Applications 7 (1), 41, 2023
62023
Observation of superconducting Leggett modes from competing pairing instabilities in single-layer NbSe2
W Wan, P Dreher, D Muñoz-Segovia, R Harsh, F Guinea, F de Juan, ...
arXiv e-prints, arXiv: 2101.04050, 2021
5*2021
Controlled growth of MoS2 via surface-energy alterations
W Wan, L Zhan, TM Shih, Z Zhu, J Lu, J Huang, Y Zhang, H Huang, ...
Nanotechnology 31 (3), 035601, 2019
52019
Critical annealing temperature for stacking orientation of bilayer graphene
Z Zhu, L Zhan, TM Shih, W Wan, J Lu, J Huang, S Guo, Y Zhou, W Cai
Small 14 (39), 1802498, 2018
52018
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