Wen Wan (万闻)
Wen Wan (万闻)
DIPC(Spain), Xiamen University(CN).
Verified email at stu.xmu.edu.cn
Title
Cited by
Cited by
Year
Absence of Ferromagnetism in VSe2 Caused by Its Charge Density Wave Phase
AO Fumega, M Gobbi, P Dreher, W Wan, C González-Orellana, ...
The Journal of Physical Chemistry C 123 (45), 27802-27810, 2019
422019
Interlayer coupling of a direct van der Waals epitaxial MoS 2/graphene heterostructure
W Wan, X Li, X Li, B Xu, L Zhan, Z Zhao, P Zhang, SQ Wu, Z Zhu, ...
RSC advances 6 (1), 323-330, 2016
352016
Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC (0001)
W Wan, H Li, H Huang, SL Wong, L Lv, Y Gao, ATS Wee
ACS nano 8 (1), 970-976, 2014
222014
A homogeneous p–n junction diode by selective doping of few layer MoSe 2 using ultraviolet ozone for high-performance photovoltaic devices
X Zheng, Y Wei, J Liu, S Wang, J Shi, H Yang, G Peng, C Deng, W Luo, ...
Nanoscale 11 (28), 13469-13476, 2019
172019
Temperature‐Related Morphological Evolution of MoS2 Domains on Graphene and Electron Transfer within Heterostructures
W Wan, L Zhan, B Xu, F Zhao, Z Zhu, Y Zhou, Z Yang, T Shih, W Cai
Small 13 (15), 1603549, 2017
142017
Centimeter-Scale Nearly Single-Crystal Monolayer MoS2 via Self-Limiting Vapor Deposition Epitaxy
L Zhan, W Wan, Z Zhu, Y Xu, TM Shih, C Zhang, W Lin, X Li, Z Zhao, ...
The Journal of Physical Chemistry C 121 (8), 4703-4707, 2017
122017
MoS2 materials synthesized on SiO2/Si substrates via MBE
L Zhan, W Wan, Z Zhu, TM Shih, W Cai
Journal of Physics: Conference Series 864 (1), 012037, 2017
72017
Ni foam assisted synthesis of high quality hexagonal boron nitride with large domain size and controllable thickness
H Ying, X Li, D Li, M Huang, W Wan, Q Yao, X Chen, Z Wang, Y Wu, ...
2D Materials 5 (2), 025020, 2018
62018
An etching phenomenon exhibited by chemical vapor deposited graphene on a copper pocket
Z Zhao, X Chen, C Zhang, W Wan, Z Shan, B Tian, Q Li, H Ying, P Zhuang, ...
Carbon 106, 279-283, 2016
62016
Syntheses and bandgap alterations of MoS2 induced by stresses in graphene-platinum substrates
W Wan, L Chen, L Zhan, Z Zhu, Y Zhou, T Shih, S Guo, J Kang, H Huang, ...
Carbon 131, 26-30, 2018
52018
Critical annealing temperature for stacking orientation of bilayer graphene
Z Zhu, L Zhan, TM Shih, W Wan, J Lu, J Huang, S Guo, Y Zhou, W Cai
Small 14 (39), 1802498, 2018
42018
A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy
L Zhan, W Wan, Z Zhu, Z Zhao, Z Zhang, TM Shih, W Cai
Nanotechnology 28 (30), 305601, 2017
32017
Epitaxial growth and intrinsic nature of molybdenum disulfide on graphite
P Zhang, Y Fang, Y Zhou, W Wan, X Yan, R Zhang, S Wu, ZZ Zhu, W Cai, ...
Applied Physics Express 10 (5), 055201, 2017
32017
Capabilities of transition metals in retarding the bonding of carbon atoms to minimize dendritic graphene
Z Zhu, L Zhan, W Wan, Z Zhao, TM Shih, W Cai
Nanoscale 9 (39), 14804-14808, 2017
32017
Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers
F Calavalle, P Dreher, AP Surdendran, W Wan, M Timpel, R Verucchi, ...
Nano Letters, 2020
12020
Controlled growth of MoS2 via surface-energy alterations
W Wan, L Zhan, TM Shih, Z Zhu, J Lu, J Huang, Y Zhang, H Huang, ...
Nanotechnology 31 (3), 035601, 2019
12019
Synthesis of sub-millimeter Bi-/multi-layer graphene by designing a sandwiched structure using copper foils
Z Zhao, K Jia, JC Shaw, Z Zhu, W Wan, L Zhan, M Li, H Wang, X Chen, ...
Applied Physics Letters 109 (12), 123107, 2016
12016
Atomic-scale characterization of few-layer Cr5Se8
P Dreher, W Wan, M Ilyn, J Herrero-Martín, P Gargiani, M Gobbi, ...
Bulletin of the American Physical Society, 2021
2021
Proximity effects in the charge density wave order and superconductivity in single-layer NbSe2
W Wan, P Dreher, A Chikina, H Guo, R Harsh, M Bianchi, M Gobbi, ...
Bulletin of the American Physical Society, 2021
2021
Unconventional superconductivity mediated by spin fluctuations in single-layer NbSe2
W Wan, P Dreher, R Harsh, F Guinea, MM Ugeda
arXiv preprint arXiv:2101.04050, 2021
2021
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