Jing Lu
Title
Cited by
Cited by
Year
N-polar GaN epitaxy and high electron mobility transistors
MH Wong, S Keller, SD Nidhi, DJ Denninghoff, S Kolluri, DF Brown, J Lu, ...
Semiconductor Science and Technology 28 (7), 074009, 2013
1452013
Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
S Keller, H Li, M Laurent, Y Hu, N Pfaff, J Lu, DF Brown, NA Fichtenbaum, ...
Semiconductor Science and Technology 29 (11), 113001, 2014
1432014
Analog circuit optimization system based on hybrid evolutionary algorithms
B Liu, Y Wang, Z Yu, L Liu, M Li, Z Wang, J Lu, FV Fernández
INTEGRATION, the VLSI journal 42 (2), 137-148, 2009
1432009
A new small-signal modeling and extraction method in AlGaN/GaN HEMTs
J Lu, Y Wang, L Ma, Z Yu
Solid-State Electronics 52 (1), 115-120, 2008
902008
Spatially-resolved spectroscopic measurements of Ec− 0.57 eV traps in AlGaN/GaN high electron mobility transistors
DW Cardwell, A Sasikumar, AR Arehart, SW Kaun, J Lu, S Keller, ...
Applied Physics Letters 102 (19), 193509, 2013
892013
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
R Yeluri, J Lu, CA Hurni, DA Browne, S Chowdhury, S Keller, JS Speck, ...
Applied Physics Letters 106 (18), 183502, 2015
772015
Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
B Mazumder, SW Kaun, J Lu, S Keller, UK Mishra, JS Speck
Applied Physics Letters 102 (11), 111603, 2013
632013
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High
DJ Denninghoff, S Dasgupta, J Lu, S Keller, UK Mishra
Electron Device Letters, IEEE 33 (6), 785-787, 2012
592012
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
R Yeluri, X Liu, BL Swenson, J Lu, S Keller, UK Mishra
Journal of Applied Physics 114 (8), 083718, 2013
412013
Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors
X Liu, R Yeluri, J Lu, UK Mishra
Journal of electronic materials 42 (1), 33-39, 2013
392013
N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒ max
D Denninghoff, J Lu, M Laurent, E Ahmadi, S Keller, UK Mishra
Device Research Conference (DRC), 2012 70th Annual, 151-152, 2012
362012
Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
X Liu, J Kim, R Yeluri, S Lal, H Li, J Lu, S Keller, B Mazumder, JS Speck, ...
Journal of Applied Physics 114 (16), 164507, 2013
342013
N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz f T and 405 GHz f max
D Denninghoff, J Lu, E Ahmadi, S Keller, UK Mishra
Device Research Conference (DRC), 2013 71st Annual, 197-198, 2013
322013
Self-aligned N-polar GaN/InAlN MIS-HEMTs with record extrinsic transconductance of 1105 mS/mm
S Dasgupta, J Lu, JS Speck, UK Mishra
Electron Device Letters, IEEE 33 (6), 794-796, 2012
292012
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
X Liu, R Yeluri, J Kim, S Lal, A Raman, C Lund, S Wienecke, J Lu, ...
Applied Physics Letters 103 (5), 053509, 2013
282013
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition
J Lu, D Denninghoff, R Yeluri, S Lal, G Gupta, M Laurent, S Keller, ...
Applied Physics Letters 102 (23), 232104, 2013
272013
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz
S Dasgupta, J Lu, JS Speck, UK Mishra
Electron Device Letters, IEEE 33 (7), 961-963, 2012
272012
Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition
T Fujiwara, R Yeluri, D Denninghoff, J Lu, S Keller, JS Speck, ...
Applied physics express 4 (9), 096501, 2011
272011
Engineering the (In, Al, Ga) N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors
J Lu, X Zheng, M Guidry, D Denninghoff, E Ahmadi, S Lal, S Keller, ...
Applied Physics Letters 104 (9), 092107, 2014
242014
Anomalous output conductance in N-polar GaN high electron mobility transistors
M Hoi Wong, U Singisetti, J Lu, JS Speck, UK Mishra
Electron Devices, IEEE Transactions on 59 (11), 2988-2995, 2012
212012
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