Wenshen Li
Wenshen Li
Verified email at cornell.edu
Title
Cited by
Cited by
Year
Enhancement-Mode Ga2O3Vertical Transistors With Breakdown Voltage >1 kV
Z Hu, K Nomoto, W Li, N Tanen, K Sasaki, A Kuramata, T Nakamura, ...
IEEE Electron Device Letters 39 (6), 869-872, 2018
1562018
Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors
Z Hu, K Nomoto, W Li, Z Zhang, N Tanen, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (12), 122103, 2018
842018
1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2
W Li, Z Hu, K Nomoto, Z Zhang, JY Hsu, QT Thieu, K Sasaki, A Kuramata, ...
Applied Physics Letters 113 (20), 202101, 2018
762018
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Electron Device Letters 41 (1), 107-110, 2019
712019
Design and realization of GaN trench junction-barrier-Schottky-diodes
W Li, K Nomoto, M Pilla, M Pan, X Gao, D Jena, HG Xing
IEEE Transactions on Electron Devices 64 (4), 1635-1641, 2017
532017
1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy
Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
492017
2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current
W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ...
2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018
412018
Activation of buried p-GaN in MOCVD-regrown vertical structures
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, J Xie, M Pilla, ...
Applied Physics Letters 113 (6), 062105, 2018
312018
Development of GaN vertical trench-MOSFET with MBE regrown channel
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ...
IEEE Transactions on Electron Devices 65 (6), 2558-2564, 2018
312018
Single and multi-fin normally-off Ga2O3 vertical transistors with a breakdown voltage over 2.6 kV
W Li, K Nomoto, Z Hu, T Nakamura, D Jena, HG Xing
2019 IEEE International Electron Devices Meeting (IEDM), 12.4. 1-12.4. 4, 2019
292019
Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes
W Li, D Saraswat, Y Long, K Nomoto, D Jena, HG Xing
Applied Physics Letters 116 (19), 192101, 2020
242020
Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes
W Li, K Nomoto, Z Hu, D Jena, HG Xing
Applied Physics Express 12 (6), 061007, 2019
242019
GaN HEMTs on Si with regrown contacts and cutoff/maximum oscillation frequencies of 250/204 GHz
L Li, K Nomoto, M Pan, W Li, A Hickman, J Miller, K Lee, Z Hu, SJ Bader, ...
IEEE Electron Device Letters 41 (5), 689-692, 2020
232020
Vertical fin Ga2O3power field-effect transistors with on/off ratio >109
Z Hu, K Nomoto, W Li, LJ Zhang, JH Shin, N Tanen, T Nakamura, D Jena, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
182017
1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation
Z Hu, K Nomoto, W Li, R Jinno, T Nakamura, D Jena, H Xing
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
172019
600 V GaN vertical V-trench MOSFET with MBE regrown channel
W Li, K Nomoto, K Lee, SM Islam, Z Hu, M Zhu, X Gao, M Pilla, D Jena, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
122017
GaN vertical nanowire and fin power MISFETs
Z Hu, W Li, K Nomoto, M Zhu, X Gao, M Pilla, D Jena, HG Xing
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
102017
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃
W Li, K Nomoto, Z Hu, D Jena, HG Xing
IEEE Transactions on Electron Devices 67 (10), 3938-3947, 2020
82020
Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms
W Li, K Nomoto, A Sundar, K Lee, M Zhu, Z Hu, E Beam, J Xie, M Pilla, ...
Japanese Journal of Applied Physics 58 (SC), SCCD15, 2019
82019
Degradation of GaN-on-GaN vertical diodes submitted to high current stress
E Fabris, M Meneghini, C De Santi, Z Hu, W Li, K Nomoto, X Gao, D Jena, ...
Microelectronics Reliability 88, 568-571, 2018
82018
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