Rudiger (Rüdiger) Quay
Rudiger (Rüdiger) Quay
Fraunhofer IAF, Albert Ludwigs Universität Freiburg
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Cited by
Cited by
Gallium nitride electronics
R Quay
Springer Science & Business Media, 2008
Analysis and simulation of heterostructure devices
V Palankovski, R Quay
Springer Science & Business Media, 2004
High-temperature modeling of algan/gan hemts
S Vitanov, V Palankovski, S Maroldt, R Quay
Solid-State Electronics 54 (10), 1105-1112, 2010
A temperature dependent model for the saturation velocity in semiconductor materials
R Quay, C Moglestue, V Palankovski, S Selberherr
Materials Science in Semiconductor Processing 3 (1-2), 149-155, 2000
The continuous inverse class-F mode with resistive second-harmonic impedance
V Carrubba, M Akmal, R Quay, J Lees, J Benedikt, SC Cripps, PJ Tasker
IEEE Transactions on Microwave Theory and Techniques 60 (6), 1928-1936, 2012
Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
S Maroldt, C Haupt, W Pletschen, S Müller, R Quay, O Ambacher, ...
Japanese Journal of Applied Physics 48 (4S), 04C083, 2009
102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz
H Sun, AR Alt, H Benedickter, CR Bolognesi, E Feltin, JF Carlin, ...
IEEE electron device letters 30 (8), 796-798, 2009
Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
U Schmid, H Sledzik, P Schuh, J Schroth, M Oppermann, P Brückner, ...
IEEE Transactions on Microwave Theory and Techniques 61 (8), 3043-3051, 2013
Robust AlGaN/GaN low noise amplifier MMICs for C-, Ku-and Ka-band space applications
EM Suijker, M Rodenburg, JA Hoogland, M Van Heijningen, ...
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 1-4, 2009
GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
T Lim, R Aidam, P Waltereit, T Henkel, R Quay, R Lozar, T Maier, L Kirste, ...
IEEE Electron Device Letters 31 (7), 671-673, 2010
GaN MMIC based T/R-module front-end for X-band applications
P Schuh, H Sledzik, R Reber, A Fleckenstein, R Leberer, M Oppermann, ...
2008 European Microwave Integrated Circuit Conference, 274-277, 2008
Physics-based modeling of GaN HEMTs
S Vitanov, V Palankovski, S Maroldt, R Quay, S Murad, T Rodle, ...
IEEE transactions on electron devices 59 (3), 685-693, 2012
Robust GaN HEMT low-noise amplifier MMICs for X-band applications
D Krausse, R Quay, A Tessmann, H Massler, A Leuther, T Merkle, ...
Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures
P Waltereit, S Müller, K Bellmann, C Buchheim, R Goldhahn, K Köhler, ...
Journal of Applied Physics 106 (2), 023535, 2009
A coplanar X-band AlGaN/GaN power amplifier MMIC on si SiC substrate
F Van Raay, R Quay, R Kiefer, F Benkhelifa, B Raynor, W Pletschen, ...
IEEE Microwave and Wireless Components Letters 15 (7), 460-462, 2005
Assembly and packaging technologies for high-temperature and high-power GaN devices
AA Bajwa, Y Qin, R Reiner, R Quay, J Wilde
IEEE Transactions on Components, Packaging and Manufacturing Technology 5 …, 2015
20W GaN HPAs for next generation X-band T/R-modules
P Schuh, R Leberer, H Sledzik, M Oppermann, B Adelseck, H Brugger, ...
2006 IEEE MTT-S International Microwave Symposium Digest, 726-729, 2006
A systematic state–space approach to large-signal transistor modeling
M Seelmann-Eggebert, T Merkle, F van Raay, R Quay, M Schlechtweg
IEEE Transactions on Microwave Theory and Techniques 55 (2), 195-206, 2007
Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology
R Reiner, P Waltereit, B Weiss, S Moench, M Wespel, S Müller, R Quay, ...
IET Power Electronics 11 (4), 681-688, 2018
Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
T Lim, R Aidam, L Kirste, P Waltereit, R Quay, S Müller, O Ambacher
Applied Physics Letters 96 (25), 252108, 2010
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