Liu Huiyong
Title
Cited by
Cited by
Year
Transparent conducting oxides for electrode applications in light emitting and absorbing devices
H Liu, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç
Superlattices and Microstructures 48 (5), 458-484, 2010
6192010
GaN-based light-emitting diodes: Efficiency at high injection levels
Ü Ozgur, H Liu, X Li, X Ni, H Morkoc
Proceedings of the IEEE 98 (7), 1180-1196, 2010
1402010
Impurity complexes and conductivity of Ga-doped ZnO
DO Demchenko, B Earles, HY Liu, V Avrutin, N Izyumskaya, Ü Özgür, ...
Physical Review B 84 (7), 075201, 2011
762011
Donor behavior of Sb in ZnO
HY Liu, N Izyumskaya, V Avrutin, Ü Özgür, AB Yankovich, AV Kvit, ...
Journal of Applied Physics 112 (3), 033706, 2012
372012
Highly conductive and optically transparent GZO films grown under metal‐rich conditions by plasma assisted MBE
HY Liu, V Avrutin, N Izyumskaya, MA Reshchikov, Ü Özgür, H Morkoç
physica status solidi (RRL)–Rapid Research Letters 4 (3‐4), 70-72, 2010
362010
Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy
HM H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A
J. Appl. Phys. 111 (10), 103713, 2012
352012
Structural and electrical properties of grown on (0001) GaN using a double bridge layer
B Xiao, X Gu, N Izyumskaya, V Avrutin, J Xie, H Liu, H Morkoç
Applied Physics Letters 91 (18), 182908, 2007
332007
Large pyroelectric effect in undoped epitaxial thin films on substrates
B Xiao, V Avrutin, H Liu, Ü Özgür, H Morkoç, C Lu
Applied Physics Letters 93 (5), 052913, 2008
302008
InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide
X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ...
physica status solidi (a) 207 (8), 1993-1996, 2010
262010
Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs
X Li, H Liu, X Ni, Ü Özgür, H Morkoç
Superlattices and Microstructures 47 (1), 118-122, 2010
252010
Epitaxial growth of (001)-oriented thin films on -plane sapphire with an MgO/ZnO bridge layer
B Xiao, H Liu, V Avrutin, JH Leach, E Rowe, H Liu, Ü Özgür, H Morkoç, ...
Applied Physics Letters 95 (21), 212901, 2009
242009
Hot-electron energy relaxation time in Ga-doped ZnO films
E Šermukšnis, J Liberis, M Ramonas, A Matulionis, M Toporkov, HY Liu, ...
Journal of Applied Physics 117 (6), 065704, 2015
232015
High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy
WV Schoenfeld, M Wei, RC Boutwell, H Liu
Oxide-Based Materials and Devices V 8987, 89871P, 2014
152014
Hexagonal-based pyramid void defects in GaN and InGaN
AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, HY Liu, N Izyumskaya, ...
Journal of Applied Physics 111 (2), 023517, 2012
152012
InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p‐GaN
HY Liu, X Li, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ...
physica status solidi c 8 (5), 1548-1551, 2011
142011
Epitaxial relationship of MBE grown barium hexaferrite (0 0 0 1) films on sapphire (0 0 0 1)
H Liu, V Avrutin, B Xiao, E Rowe, HR Liu, Ü Özgür, H Morkoç
Journal of crystal growth 312 (5), 671-675, 2010
142010
Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose
AB Yankovich, AV Kvit, X Li, F Zhang, V Avrutin, H Liu, N Izyumskaya, ...
Microscopy and microanalysis 20 (3), 864-868, 2014
132014
Impurity distribution and microstructure of Ga-doped ZnO films grown by molecular beam epitaxy
AV Kvit, AB Yankovich, V Avrutin, H Liu, N Izyumskaya, Ü Özgür, ...
Journal of Applied Physics 112 (12), 123527, 2012
132012
Temperature Dependent Behavior of the SPV for n-type GaN
JD McNamara, M Foussekis, H Liu, H Morkoç, MA Reshchikov, AA Baski
Gallium nitride materials and devices VII 8262, 826213, 2012
132012
InGaN light-emitting diodes with highly transparent ZnO: Ga electrodes
HY Liu, X Li, X Ni, V Avrutin, N Izyumskaya, Ü Özgür, H Morkoç
Gallium Nitride Materials and Devices V 7602, 76020I, 2010
62010
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