Mona A. Ebrish
Mona A. Ebrish
US Naval Research Laboratory
Verified email at - Homepage
Cited by
Cited by
High acceptor level doping in silicon germanium
MA Ebrish, O Gluschenkov, S Mochizuki, A Reznicek
US Patent 9,799,736, 2017
SnSe2 field-effect transistors with high drive current
Y Su, MA Ebrish, EJ Olson, SJ Koester
Applied Physics Letters 103 (26), 263104, 2013
Graphene-based quantum capacitance wireless vapor sensors
DA Deen, EJ Olson, MA Ebrish, SJ Koester
IEEE Sensors Journal 14 (5), 1459-1466, 2013
Capacitive Sensing of Intercalated H2O Molecules Using Graphene
EJ Olson, R Ma, T Sun, MA Ebrish, N Haratipour, K Min, NR Aluru, ...
ACS applied materials & interfaces 7 (46), 25804-25812, 2015
Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes
MA Ebrish, H Shao, SJ Koester
Applied Physics Letters 100 (14), 143102, 2012
Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene
MA Ebrish, EJ Olson, SJ Koester
ACS Applied Materials & Interfaces 6 (13), 10296-10303, 2014
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 085701, 2020
Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics
MA Ebrish, DA Deen, SJ Koester
71st Device Research Conference, 37-38, 2013
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ...
Applied Physics Letters 117 (8), 082103, 2020
Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates
MA Ebrish, SJ Koester
70th Device Research Conference, 105-106, 2012
Effect of GaN substrate properties on vertical GaN PiN diode electrical performance
JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ...
Journal of Electronic Materials 50, 3013-3021, 2021
12.5 kV GaN super-heterojunction Schottky barrier diodes
SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ...
IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021
Liquid drop emitter
M Noritake, T Hirota, T Ohnishi
US Patent 7,261,862, 2007
Development of high-voltage vertical GaN PN diodes
RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
Nanosheet substrate to source/drain isolation
FL Lie, M Ebrish, EA De Silva, I Seshadri, G Karve, LA Clevenger, ...
US Patent 10,734,523, 2020
Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (3 …, 2021
A study on the impact of mid-gap defects on vertical GaN diodes
MA Ebrish, TJ Anderson, AD Koehler, GM Foster, JC Gallagher, RJ Kaplar, ...
IEEE Transactions on Semiconductor Manufacturing 33 (4), 546-551, 2020
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs
M Ebrish, X Liu, B Anderson, H Bu, J Wang
US Patent 10,811,528, 2020
GaN homoepitaxial growth and substrate-dependent effects for vertical power devices
JK Hite, MA Mastro, TJ Anderson, JC Gallagher, M Ebrish, JA Freitas
ECS Transactions 98 (6), 63, 2020
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