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Mona A. Ebrish
Mona A. Ebrish
US Naval Research Laboratory
Verified email at umn.edu - Homepage
Title
Cited by
Cited by
Year
High acceptor level doping in silicon germanium
MA Ebrish, O Gluschenkov, S Mochizuki, A Reznicek
US Patent 9,799,736, 2017
1872017
SnSe2 field-effect transistors with high drive current
Y Su, MA Ebrish, EJ Olson, SJ Koester
Applied Physics Letters 103 (26), 263104, 2013
1112013
Graphene-based quantum capacitance wireless vapor sensors
DA Deen, EJ Olson, MA Ebrish, SJ Koester
IEEE Sensors Journal 14 (5), 1459-1466, 2013
552013
Capacitive Sensing of Intercalated H2O Molecules Using Graphene
EJ Olson, R Ma, T Sun, MA Ebrish, N Haratipour, K Min, NR Aluru, ...
ACS applied materials & interfaces 7 (46), 25804-25812, 2015
442015
Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes
MA Ebrish, H Shao, SJ Koester
Applied Physics Letters 100 (14), 143102, 2012
372012
Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene
MA Ebrish, EJ Olson, SJ Koester
ACS Applied Materials & Interfaces 6 (13), 10296-10303, 2014
292014
Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates
MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ...
Journal of Physics D: Applied Physics 54 (3), 034005, 2020
212020
p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing
V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ...
Journal of Applied Physics 128 (8), 085701, 2020
132020
Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics
MA Ebrish, DA Deen, SJ Koester
71st Device Research Conference, 37-38, 2013
132013
Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments
GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ...
Applied Physics Letters 117 (8), 082103, 2020
122020
Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates
MA Ebrish, SJ Koester
70th Device Research Conference, 105-106, 2012
112012
Effect of GaN substrate properties on vertical GaN PiN diode electrical performance
JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ...
Journal of Electronic Materials 50, 3013-3021, 2021
72021
12.5 kV GaN super-heterojunction Schottky barrier diodes
SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ...
IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021
62021
Liquid drop emitter
M Noritake, T Hirota, T Ohnishi
US Patent 7,261,862, 2007
62007
Development of high-voltage vertical GaN PN diodes
RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ...
2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020
52020
Nanosheet substrate to source/drain isolation
FL Lie, M Ebrish, EA De Silva, I Seshadri, G Karve, LA Clevenger, ...
US Patent 10,734,523, 2020
52020
Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy
MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (3 …, 2021
42021
A study on the impact of mid-gap defects on vertical GaN diodes
MA Ebrish, TJ Anderson, AD Koehler, GM Foster, JC Gallagher, RJ Kaplar, ...
IEEE Transactions on Semiconductor Manufacturing 33 (4), 546-551, 2020
42020
Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs
M Ebrish, X Liu, B Anderson, H Bu, J Wang
US Patent 10,811,528, 2020
32020
GaN homoepitaxial growth and substrate-dependent effects for vertical power devices
JK Hite, MA Mastro, TJ Anderson, JC Gallagher, M Ebrish, JA Freitas
ECS Transactions 98 (6), 63, 2020
32020
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Articles 1–20