| High acceptor level doping in silicon germanium MA Ebrish, O Gluschenkov, S Mochizuki, A Reznicek US Patent 9,799,736, 2017 | 187 | 2017 |
| SnSe2 field-effect transistors with high drive current Y Su, MA Ebrish, EJ Olson, SJ Koester Applied Physics Letters 103 (26), 263104, 2013 | 111 | 2013 |
| Graphene-based quantum capacitance wireless vapor sensors DA Deen, EJ Olson, MA Ebrish, SJ Koester IEEE Sensors Journal 14 (5), 1459-1466, 2013 | 55 | 2013 |
| Capacitive Sensing of Intercalated H2O Molecules Using Graphene EJ Olson, R Ma, T Sun, MA Ebrish, N Haratipour, K Min, NR Aluru, ... ACS applied materials & interfaces 7 (46), 25804-25812, 2015 | 44 | 2015 |
| Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes MA Ebrish, H Shao, SJ Koester Applied Physics Letters 100 (14), 143102, 2012 | 37 | 2012 |
| Effect of noncovalent basal plane functionalization on the quantum capacitance in graphene MA Ebrish, EJ Olson, SJ Koester ACS Applied Materials & Interfaces 6 (13), 10296-10303, 2014 | 29 | 2014 |
| Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates MJ Tadjer, F Alema, A Osinsky, MA Mastro, N Nepal, JM Woodward, ... Journal of Physics D: Applied Physics 54 (3), 034005, 2020 | 21 | 2020 |
| p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 085701, 2020 | 13 | 2020 |
| Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics MA Ebrish, DA Deen, SJ Koester 71st Device Research Conference, 37-38, 2013 | 13 | 2013 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 082103, 2020 | 12 | 2020 |
| Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates MA Ebrish, SJ Koester 70th Device Research Conference, 105-106, 2012 | 11 | 2012 |
| Effect of GaN substrate properties on vertical GaN PiN diode electrical performance JC Gallagher, TJ Anderson, AD Koehler, MA Ebrish, GM Foster, ... Journal of Electronic Materials 50, 3013-3021, 2021 | 7 | 2021 |
| 12.5 kV GaN super-heterojunction Schottky barrier diodes SW Han, J Song, M Sadek, A Molina, MA Ebrish, SE Mohney, ... IEEE Transactions on Electron Devices 68 (11), 5736-5741, 2021 | 6 | 2021 |
| Liquid drop emitter M Noritake, T Hirota, T Ohnishi US Patent 7,261,862, 2007 | 6 | 2007 |
| Development of high-voltage vertical GaN PN diodes RJ Kaplar, BP Gunning, AA Allerman, MH Crawford, JD Flicker, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.1. 1-5.1. 4, 2020 | 5 | 2020 |
| Nanosheet substrate to source/drain isolation FL Lie, M Ebrish, EA De Silva, I Seshadri, G Karve, LA Clevenger, ... US Patent 10,734,523, 2020 | 5 | 2020 |
| Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy MJ Tadjer, K Sasaki, D Wakimoto, TJ Anderson, MA Mastro, JC Gallagher, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 39 (3 …, 2021 | 4 | 2021 |
| A study on the impact of mid-gap defects on vertical GaN diodes MA Ebrish, TJ Anderson, AD Koehler, GM Foster, JC Gallagher, RJ Kaplar, ... IEEE Transactions on Semiconductor Manufacturing 33 (4), 546-551, 2020 | 4 | 2020 |
| Two step fin etch and reveal for VTFETs and high breakdown LDVTFETs M Ebrish, X Liu, B Anderson, H Bu, J Wang US Patent 10,811,528, 2020 | 3 | 2020 |
| GaN homoepitaxial growth and substrate-dependent effects for vertical power devices JK Hite, MA Mastro, TJ Anderson, JC Gallagher, M Ebrish, JA Freitas ECS Transactions 98 (6), 63, 2020 | 3 | 2020 |
Steven J. KoesterProfessor of Electrical & Computer Engineering, University of MinnesotaVerified email at umn.edu
