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Dan Mihai Buca
Dan Mihai Buca
Dr.
Verified email at fz-juelich.de - Homepage
Title
Cited by
Cited by
Year
Lasing in direct-bandgap GeSn alloy grown on Si
S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
Nature photonics 9 (2), 88-92, 2015
12932015
Method for depositing a crystal layer at low temperatures, in particular a photoluminescent IV-IV layer on an IV substrate, and an optoelectronic component having such a layer
D Grützmacher, S Wirths, DM Buca, S Mantl
US Patent 10,988,858, 2021
2752021
Si–Ge–Sn alloys: From growth to applications
S Wirths, D Buca, S Mantl
Progress in crystal growth and characterization of materials 62 (1), 1-39, 2016
2562016
Optically pumped GeSn microdisk lasers on Si
D Stange, S Wirths, R Geiger, C Schulte-Braucks, B Marzban, ...
ACS photonics 3 (7), 1279-1285, 2016
2492016
Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors
S Wirths, AT Tiedemann, Z Ikonic, P Harrison, B Holländer, T Stoica, ...
Applied physics letters 102 (19), 2013
1902013
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
A Elbaz, D Buca, N von den Driesch, K Pantzas, G Patriarche, ...
Nature Photonics 14 (6), 375-382, 2020
1872020
Direct bandgap group IV epitaxy on Si for laser applications
N Von Den Driesch, D Stange, S Wirths, G Mussler, B Hollander, Z Ikonic, ...
Chemistry of Materials 27 (13), 4693-4702, 2015
1632015
Group IV photonics: driving integrated optoelectronics
R Soref, D Buca, SQ Yu
optics and photonics news 27 (1), 32-39, 2016
1202016
Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
D Stange, N Von den Driesch, D Rainko, S Roesgaard, I Povstugar, ...
Optica 4 (2), 185-188, 2017
1162017
GeSn/SiGeSn heterostructure and multi quantum well lasers
D Stange, N von den Driesch, T Zabel, F Armand-Pilon, D Rainko, ...
ACS photonics 5 (11), 4628-4636, 2018
1072018
Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys
D Stange, S Wirths, N von den Driesch, G Mussler, T Stoica, Z Ikonic, ...
ACS photonics 2 (11), 1539-1545, 2015
1062015
GeSn heterojunction LEDs on Si substrates
M Oehme, K Kostecki, T Arguirov, G Mussler, K Ye, M Gollhofer, M Schmid, ...
IEEE Photonics Technology Letters 26 (2), 187-189, 2013
1042013
Monolithic infrared silicon photonics: the rise of (Si) GeSn semiconductors
O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ...
Applied Physics Letters 118 (11), 2021
1032021
Low Vπ Silicon photonics modulators with highly linear epitaxially grown phase shifters
SS Azadeh, F Merget, S Romero-García, A Moscoso-Mártir, ...
Optics express 23 (18), 23526-23550, 2015
1012015
Reduced pressure CVD growth of Ge and Ge1− xSnx alloys
S Wirths, D Buca, G Mussler, AT Tiedemann, B Holländer, P Bernardy, ...
ECS Journal of Solid State Science and Technology 2 (5), N99, 2013
962013
Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
D Stange, N Von Den Driesch, D Rainko, C Schulte-Braucks, S Wirths, ...
Optics express 24 (2), 1358-1367, 2016
932016
Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays
S Assali, A Dijkstra, A Li, S Koelling, MA Verheijen, L Gagliano, ...
Nano letters 17 (3), 1538-1544, 2017
922017
Nat. Photonics 9, 88 (2015)
S Wirths, R Geiger, N Von Den Driesch, G Mussler, T Stoica, S Mantl, ...
892014
Tensely strained GeSn alloys as optical gain media
S Wirths, Z Ikonic, AT Tiedemann, B Holländer, T Stoica, G Mussler, ...
Applied physics letters 103 (19), 2013
852013
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
M Oehme, D Buca, K Kostecki, S Wirths, B Holländer, E Kasper, J Schulze
Journal of crystal growth 384, 71-76, 2013
832013
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