| Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ... Advanced Functional Materials 26 (25), 4601-4612, 2016 | 696 | 2016 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 573 | 2019 |
| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 2011 | 538 | 2011 |
| A Physical Model of the Temperature Dependence of the Current Through Stacks L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ... IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011 | 268 | 2011 |
| Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker IEEE Transactions on electron devices 62 (6), 1998-2006, 2015 | 220 | 2015 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... 2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010 | 162 | 2010 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 153 | 2011 |
| A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State FM Puglisi, L Larcher, A Padovani, P Pavan IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015 | 123 | 2015 |
| A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling A Padovani, DZ Gao, AL Shluger, L Larcher Journal of applied physics 121 (15), 2017 | 112 | 2017 |
| Experimental and theoretical study of electrode effects in HfO2 based RRAM C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ... 2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011 | 108 | 2011 |
| Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics L Vandelli, A Padovani, L Larcher, G Bersuker IEEE Transactions on Electron Devices 60 (5), 1754-1762, 2013 | 97 | 2013 |
| Random telegraph noise (RTN) in scaled RRAM devices D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ... 2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013 | 90 | 2013 |
| Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric G Bersuker, D Heh, C Young, H Park, P Khanal, L Larcher, A Padovani, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008 | 90 | 2008 |
| Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M Nafría, G Bersuker Journal of Applied Physics 114 (13), 2013 | 89 | 2013 |
| A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014 | 87 | 2014 |
| An empirical model for RRAM resistance in low-and high-resistance states FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan IEEE Electron Device Letters 34 (3), 387-389, 2013 | 86 | 2013 |
| Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ... 2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011 | 86 | 2011 |
| Linking conductive filament properties and evolution to synaptic behavior of RRAM devices for neuromorphic applications J Woo, A Padovani, K Moon, M Kwak, L Larcher, H Hwang IEEE Electron Device Letters 38 (9), 1220-1223, 2017 | 84 | 2017 |
| Charge Transport and Degradation in HfO2 and HfOx Dielectrics A Padovani, L Larcher, G Bersuker, P Pavan IEEE electron device letters 34 (5), 680-682, 2013 | 82 | 2013 |
| Controlling uniformity of RRAM characteristics through the forming process A Kalantarian, G Bersuker, DC Gilmer, D Veksler, B Butcher, A Padovani, ... 2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 4.1-6C. 4.5, 2012 | 76 | 2012 |
Luca VandelliPh.D. University Modena and Reggio EmiliaVerified email at unimore.it
