Sebastian Lourdudoss
Sebastian Lourdudoss
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30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55/spl mu/m wavelength
O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stalnacke, L Backbom
Electronics Letters 33 (6), 488-489, 1997
1421997
Hydride vapor phase epitaxy revisited
S Lourdudoss, O Kjebon
IEEE Journal of Selected Topics in Quantum Electronics 3 (3), 749-767, 1997
861997
Heteroepitaxy and selective area heteroepitaxy for silicon photonics
S Lourdudoss
Current Opinion in Solid State and Materials Science 16 (2), 91-99, 2012
782012
Quantized conductance in a heterostructurally defined quantum wire
P Ramvall, N Carlsson, I Maximov, P Omling, L Samuelson, W Seifert, ...
Applied physics letters 71 (7), 918-920, 1997
771997
Monolithically integrated InP-based photonic chip development for O-CDMA systems
C Ji, RG Broeke, Y Du, J Cao, N Chubun, P Bjeletich, F Olsson, ...
IEEE Journal of Selected Topics in Quantum Electronics 11 (1), 66-77, 2005
732005
Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs
O Kjebon, R Schatz, S Lourdudoss, S Nilsson, B Stalnacke
High-Speed Semiconductor Laser Sources 2684, 138-152, 1996
581996
An investigation on hydride VPE growth and properties of semi-insulating InP: Fe
S Lourdudoss, B Hammarlund, O Kjebon
Journal of electronic materials 19 (9), 981-987, 1990
521990
III–Vs on Si for photonic applications—A monolithic approach
Z Wang, C Junesand, W Metaferia, C Hu, L Wosinski, S Lourdudoss
Materials Science and Engineering: B 177 (17), 1551-1557, 2012
512012
Epitaxial lateral overgrowth of InP on Si from nano-openings: Theoretical and experimental indication for defect filtering throughout the grown layer
F Olsson, M Xie, S Lourdudoss, I Prieto, PA Postigo
Journal of Applied Physics 104 (9), 093112, 2008
492008
Anomalous k-dependent spin splitting in wurtzite Al x Ga 1− x N∕ Ga N heterostructures
I Lo, MH Gau, JK Tsai, YL Chen, ZJ Chang, WT Wang, JC Chiang, ...
Physical Review B 75 (24), 245307, 2007
472007
Active photonic device
C Junesand, S Lourdudoss
US Patent 8,290,014, 2012
452012
Monolithic InP 100-Channel 10-GHz Device for Optical Arbitrary Waveform Generation
FM Soares, NK Fontaine, RP Scott, JH Baek, X Zhou, T Su, S Cheung, ...
IEEE Photonics Journal 3 (6), 975-985, 2011
442011
1.55 μm buried heterostructure laser via regrowth of semi‐insulating InP: Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogen
O Kjebon, S Lourdudoss, B Hammarlund, S Lindgren, M Rask, P Ojala, ...
Applied physics letters 59 (3), 253-255, 1991
431991
Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers
K Streubel, J Wallin, G Landgren, U ÷hlander, S Lourdudoss, O Kjebon
Journal of crystal growth 143 (1-2), 7-14, 1994
361994
Peptides for functionalization of InP semiconductors
E Estephan, M Saab, C Larroque, M Martin, F Olsson, S Lourdudoss, ...
Journal of colloid and interface science 337 (2), 358-363, 2009
312009
Electron and hole capture cross-sections of Fe acceptors in GaN: Fe epitaxially grown on sapphire
T Aggerstam, A Pinos, S Marcinkevičius, M Linnarsson, S Lourdudoss
Journal of electronic materials 36 (12), 1621-1624, 2007
312007
Demonstration of spectral phase O-CDMA encoding and decoding in monolithically integrated arrayed-waveguide-grating-based encoder
J Cao, RG Broeke, NK Fontaine, C Ji, Y Du, N Chubun, K Aihara, ...
IEEE photonics technology letters 18 (24), 2602-2604, 2006
312006
Monolithically integrated InP wafer-scale 100-channel◊ 10-GHz AWG and Michelson interferometers for 1-THz-bandwidth optical arbitrary waveform generation
FM Soares, JH Baek, NK Fontaine, X Zhou, Y Wang, RP Scott, ...
Optical Fiber Communication Conference, OThS1, 2010
302010
Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth
YT Sun, K Baskar, S Lourdudoss
Journal of applied physics 94 (4), 2746-2748, 2003
302003
Optical-CDMA in InP
RG Broeke, J Cao, C Ji, SW Seo, Y Du, NK Fontaine, JH Baek, J Yan, ...
IEEE Journal of Selected Topics in Quantum Electronics 13 (5), 1497-1507, 2007
292007
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