Luca Banszerus
Luca Banszerus
II. Institute of Physics A, RWTH Aachen University
Verified email at rwth-aachen.de - Homepage
Title
Cited by
Cited by
Year
Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper
L Banszerus, M Schmitz, S Engels, J Dauber, M Oellers, F Haupt, ...
Science advances 1 (6), e1500222, 2015
5632015
Raman spectroscopy as probe of nanometre-scale strain variations in graphene
C Neumann, S Reichardt, P Venezuela, M Drögeler, L Banszerus, ...
Nature communications 6 (1), 1-7, 2015
2912015
Ballistic transport exceeding 28 μm in CVD grown graphene
L Banszerus, M Schmitz, S Engels, M Goldsche, K Watanabe, T Taniguchi, ...
Nano letters 16 (2), 1387-1391, 2016
2552016
Spin lifetimes exceeding 12 ns in graphene nonlocal spin valve devices
M Drögeler, C Franzen, F Volmer, T Pohlmann, L Banszerus, M Wolter, ...
Nano letters 16 (6), 3533-3539, 2016
1682016
Production and processing of graphene and related materials
C Backes, AM Abdelkader, C Alonso, A Andrieux-Ledier, R Arenal, ...
2D Materials, 2020
1132020
Out-of-plane heat transfer in van der Waals stacks through electron–hyperbolic phonon coupling
KJ Tielrooij, NCH Hesp, A Principi, MB Lundeberg, EAA Pogna, ...
Nature nanotechnology 13 (1), 41-46, 2018
962018
Identifying suitable substrates for high-quality graphene-based heterostructures
L Banszerus, H Janssen, M Otto, A Epping, T Taniguchi, K Watanabe, ...
2D Materials 4 (2), 025030, 2017
652017
High mobility dry-transferred CVD bilayer graphene
M Schmitz, S Engels, L Banszerus, K Watanabe, T Taniguchi, C Stampfer, ...
Applied Physics Letters 110 (26), 263110, 2017
352017
Gate-defined electron-hole double dots in bilayer graphene
L Banszerus, B Frohn, A Epping, D Neumaier, K Watanabe, T Taniguchi, ...
arXiv preprint arXiv:1803.10857, 2018
342018
Graphene Field-Effect Transistors With High Extrinsic and
M Bonmann, M Asad, X Yang, A Generalov, A Vorobiev, L Banszerus, ...
IEEE Electron Device Letters 40 (1), 131-134, 2018
292018
Single-electron double quantum dots in bilayer graphene
L Banszerus, S Möller, E Icking, K Watanabe, T Taniguchi, C Volk, ...
Nano letters 20 (3), 2005-2011, 2020
202020
Extraordinary high room-temperature carrier mobility in graphene-WSe heterostructures
L Banszerus, T Sohier, A Epping, F Winkler, F Libisch, F Haupt, ...
arXiv preprint arXiv:1909.09523, 2019
182019
Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport
L Banszerus, B Frohn, T Fabian, S Somanchi, A Epping, M Müller, ...
Physical review letters 124 (17), 177701, 2020
17*2020
Encapsulated graphene‐based Hall sensors on foil with increased sensitivity
Z Wang, L Banszerus, M Otto, K Watanabe, T Taniguchi, C Stampfer, ...
physica status solidi (b) 253 (12), 2316-2320, 2016
172016
Line shape of the Raman 2D peak of graphene in van der Waals heterostructures
C Neumann, L Banszerus, M Schmitz, S Reichardt, J Sonntag, ...
physica status solidi (b) 253 (12), 2326-2330, 2016
162016
Quantum transport through MoS2 constrictions defined by photodoping
A Epping, L Banszerus, J Güttinger, L Krückeberg, K Watanabe, ...
Journal of Physics: Condensed Matter 30 (20), 205001, 2018
152018
Dry-transferred CVD graphene for inverted spin valve devices
M Drögeler, L Banszerus, F Volmer, T Taniguchi, K Watanabe, ...
Applied Physics Letters 111 (15), 152402, 2017
142017
Ultra-long wavelength Dirac plasmons in graphene capacitors
H Graef, D Mele, M Rosticher, L Banszerus, C Stampfer, T Taniguchi, ...
Journal of Physics: Materials 1 (1), 01LT02, 2018
132018
Electron–Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots
L Banszerus, A Rothstein, T Fabian, S Möller, E Icking, S Trellenkamp, ...
Nano letters 20 (10), 7709-7715, 2020
112020
Electrostatic Detection of Shubnikov–de Haas Oscillations in Bilayer Graphene by Coulomb Resonances in Gate‐Defined Quantum Dots
L Banszerus, T Fabian, S Möller, E Icking, H Heiming, S Trellenkamp, ...
physica status solidi (b) 257 (12), 2000333, 2020
62020
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