Zachary Bryan
Zachary Bryan
Verified email at ncsu.edu
Title
Cited by
Cited by
Year
On the origin of the 265 nm absorption band in AlN bulk crystals
R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ...
Applied Physics Letters 100 (19), 191914, 2012
1242012
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 171102, 2013
1172013
High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo
Applied Physics Letters 106 (14), 142107, 2015
1092015
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar
Journal of Crystal Growth 438, 81-89, 2016
812016
Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ...
Applied Physics Letters 103 (16), 161901, 2013
752013
The role of surface kinetics on composition and quality of AlGaN
I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ...
Journal of Crystal Growth 451, 65-71, 2016
712016
Optical signature of Mg-doped GaN: Transfer processes
G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ...
Physical Review B 86 (7), 075207, 2012
662012
The effect of polarity and surface states on the Fermi level at III-nitride surfaces
P Reddy, I Bryan, Z Bryan, W Guo, L Hussey, R Collazo, Z Sitar
Journal of Applied Physics 116 (12), 123701, 2014
612014
Electronic Biosensors Based on III-Nitride Semiconductors
R Kirste, N Rohrbaugh, I Bryan, Z Bryan, R Collazo, A Ivanisevic
Annual Review of Analytical Chemistry 8, 149-169, 2015
562015
The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN
BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ...
Applied Physics Letters 104 (20), 202106, 2014
562014
Polarity control and growth of lateral polarity structures in AlN
R Kirste, S Mita, L Hussey, MP Hoffmann, W Guo, I Bryan, Z Bryan, ...
Applied Physics Letters 102 (18), 181913, 2013
542013
Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
W Guo, Z Bryan, J Xie, R Kirste, S Mita, I Bryan, L Hussey, M Bobea, ...
Journal of Applied Physics 115 (10), 103108, 2014
512014
Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates
Z Bryan, I Bryan, S Mita, J Tweedie, Z Sitar, R Collazo
Applied Physics Letters 106 (23), 232101, 2015
472015
Preparation of free-standing GaN substrates from thick GaN layers crystallized by Hydride Vapor Phase Epitaxy on ammonothermally grown GaN seeds
T Sochacki, Z Bryan, M Amilusik, R Collazo, B Lucznik, JL Weyher, ...
Applied Physics Express 6 (7), 075504, 2013
442013
Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
T Sochacki, Z Bryan, M Amilusik, R Collazo, B Lucznik, JL Weyher, ...
Applied Physics Express 6, 075504, 2013
442013
Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition
I Bryan, A Rice, L Hussey, Z Bryan, M Bobea, S Mita, J Xie, R Kirste, ...
Applied Physics Letters 102 (6), 061602, 2013
442013
Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ...
Applied Physics Letters 112 (6), 062102, 2018
432018
HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties
T Sochacki, Z Bryan, M Amilusik, M Bobea, M Fijalkowski, I Bryan, ...
Journal of Crystal Growth 394, 55-60, 2014
432014
Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN
Z Bryan, I Bryan, BE Gaddy, P Reddy, L Hussey, M Bobea, W Guo, ...
Applied Physics Letters 105 (22), 222101, 2014
412014
Compensation effects in GaN: Mg probed by Raman spectroscopy and photoluminescence measurements
R Kirste, MP Hoffmann, J Tweedie, Z Bryan, G Callsen, T Kure, C Nenstiel, ...
Journal of Applied Physics 113 (10), 103504, 2013
412013
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