| Temperature-dependent photoluminescence of InSb/InAs nanostructures with InSb thickness in the above-monolayer range DD Firsov, OS Komkov, VA Solov’ev, PS Kop’ev, SV Ivanov Journal of Physics D: Applied Physics 49 (28), 285108, 2016 | 31 | 2016 |
| Photomodulation Fourier transform infrared spectroscopy of semiconductor structures: features of phase correction and application of method DD Firsov, OS Komkov Technical Physics Letters 39, 1071-1073, 2013 | 25 | 2013 |
| Metamorphic InAs (Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters SV Ivanov, MY Chernov, VA Solov'ev, PN Brunkov, DD Firsov, ... Progress in Crystal Growth and Characterization of Materials 65 (1), 20-35, 2019 | 22 | 2019 |
| Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In (Sb, As)/In (Ga, Al) As/GaAs quantum wells MY Chernov, VA Solov’ev, OS Komkov, DD Firsov, BY Meltser, ... Applied Physics Express 10 (12), 121201, 2017 | 22 | 2017 |
| Molecular beam epitaxy of layered group III metal chalcogenides on GaAs (001) substrates SV Sorokin, PS Avdienko, IV Sedova, DA Kirilenko, VY Davydov, ... Materials 13 (16), 3447, 2020 | 21 | 2020 |
| InSb/InAs/InGa (Al) As/GaAs (0 0 1) metamorphic nanoheterostructures grown by MBE and emitting beyond 3 μm MY Chernov, OS Komkov, DD Firsov, BY Meltser, AN Semenov, ... Journal of Crystal Growth 477, 97-99, 2017 | 20 | 2017 |
| Влияние внешнего электрического поля на вероятность оптических переходов в квантовых ямах InGaAs/GaAs АН Пихтин, ОС Комков, КВ Базаров Физика и техника полупроводников 40 (5), 608-613, 2006 | 20 | 2006 |
| Effect of external electric field on the probability of optical transitions in InGaAs/GaAs quantum wells AN Pikhtin, OS Komkov, KV Bazarov Semiconductors 40, 592-597, 2006 | 18 | 2006 |
| Excitonic effects and Franz–Keldysh oscillations in photoreflectance of ultrapure GaAs epilayers OS Komkov, GF Glinskii, AN Pikhtin, YK Ramgolam physica status solidi (a) 206 (5), 842-846, 2009 | 17 | 2009 |
| Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique OS Komkov, AN Pikhtin, YV Zhilyaev, LM Fedorov Technical Physics Letters 34, 37-39, 2008 | 17 | 2008 |
| Optical Properties of Epitaxial Al x In1−x Sb Alloy Layers OS Komkov, AN Semenov, DD Firsov, BY Meltser, VA Solov’ev, ... Semiconductors 45, 1425-1429, 2011 | 15 | 2011 |
| Effect of electric field on the probability of optical transitions in InGaAs/GaAs quantum wells observed by photo‐and electroreflectance methods AN Pikhtin, OS Komkov, F Bugge physica status solidi (a) 202 (7), 1270-1274, 2005 | 15 | 2005 |
| Radiative versus non-radiative recombination in high-efficiency mid-IR InSb/InAs/In (Ga, Al) As/GaAs metamorphic nanoheterostructures OS Komkov, DD Firsov, MY Chernov, VA Solov’Ev, AA Sitnikova, ... Journal of Physics D: Applied Physics 51 (5), 055106, 2018 | 14 | 2018 |
| Photoreflectance of indium antimonide OS Komkov, DD Firsov, TV Lvova, IV Sedova, AN Semenov, VA Solov’ev, ... Physics of the Solid State 58, 2394-2400, 2016 | 13 | 2016 |
| Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate VA Timofeev, VI Mashanov, AI Nikiforov, IV Skvortsov, AE Gayduk, ... Applied Surface Science 593, 153421, 2022 | 11 | 2022 |
| Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy OS Komkov, SA Khakhulin, DD Firsov, PS Avdienko, IV Sedova, ... Semiconductors 54, 1198-1204, 2020 | 11 | 2020 |
| Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range VA Solov’ev, MY Chernov, BY Mel’tser, AN Semenov, YV Terent’ev, ... Technical Physics Letters 42, 1038-1040, 2016 | 11 | 2016 |
| Determination of the thickness and spectral dependence of the refractive index of Al x In1 − x Sb epitaxial layers from reflectance spectra OS Komkov, DD Firsov, AN Semenov, BY Meltser, SI Troshkov, AN Pikhtin, ... Semiconductors 47, 292-297, 2013 | 11 | 2013 |
| Определение концентрации свободных носителей заряда в сверхчистых эпитаксиальных слоях GaAs методом фотоотражения ОС Комков, АН Пихтин, ЮВ Жиляев, ЛМ Фёдоров Письма в журнал технической физики 34 (1), 81-87, 2008 | 11 | 2008 |
| Dislocation filter based on LT-GaAs layers for monolithic GaAs/Si integration MO Petrushkov, DS Abramkin, EA Emelyanov, MA Putyato, OS Komkov, ... Nanomaterials 12 (24), 4449, 2022 | 10 | 2022 |
Dmitrii FirsovSaint Petersburg Electrotechnical University "LETI" (СПбГЭТУ «ЛЭТИ»)Verified email at etu.ru
