| Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ... IEEE Electron Device Letters 22 (4), 176-178, 2001 | 833 | 2001 |
| Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ... Applied Physics Letters 76 (13), 1713-1715, 2000 | 585 | 2000 |
| Design and fabrication of planar guard ring termination for high-voltage SiC diodes DC Sheridan, G Niu, JN Merrett, JD Cressler, C Ellis, CC Tin Solid-State Electronics 44 (8), 1367-1372, 2000 | 143 | 2000 |
| Lasing in whispering gallery mode in ZnO nanonails D Wang, HW Seo, CC Tin, MJ Bozack, JR Williams, M Park, Y Tzeng Journal of applied physics 99 (9), 2006 | 135 | 2006 |
| Fowler–Nordheim hole tunneling in structures RK Chanana, K McDonald, M Di Ventra, ST Pantelides, LC Feldman, ... Applied Physics Letters 77 (16), 2560-2562, 2000 | 129 | 2000 |
| Characterization and modeling of the nitrogen passivation of interface traps in K McDonald, RA Weller, ST Pantelides, LC Feldman, GY Chung, CC Tin, ... Journal of Applied Physics 93 (5), 2719-2722, 2003 | 124 | 2003 |
| Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ... Journal of applied physics 101 (2), 2007 | 109 | 2007 |
| Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the 4H–SiC interface S Dhar, YW Song, LC Feldman, T Isaacs-Smith, CC Tin, JR Williams, ... Applied physics letters 84 (9), 1498-1500, 2004 | 106 | 2004 |
| Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods D Wang, HW Seo, CC Tin, MJ Bozack, JR Williams, M Park, ... Journal of Applied Physics 99 (11), 2006 | 103 | 2006 |
| Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors G Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, RK Chanana, ... Applied Physics Letters 77 (22), 3601-3603, 2000 | 92 | 2000 |
| Improved performance of SiC MESFETs using double-recessed structure CL Zhu, CC Tin, GH Zhang, SF Yoon, J Ahn Microelectronic engineering 83 (1), 92-95, 2006 | 84 | 2006 |
| Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate Y Zhou, C Ahyi, T Isaacs-Smith, M Bozack, CC Tin, J Williams, M Park, ... Solid-State Electronics 52 (5), 756-764, 2008 | 83 | 2008 |
| Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances ST Pantelides, S Wang, A Franceschetti, R Buczko, M Di Ventra, ... Materials science forum 527, 935-948, 2006 | 73 | 2006 |
| Kinetics of NO nitridation in K McDonald, LC Feldman, RA Weller, GY Chung, CC Tin, JR Williams Journal of applied physics 93 (4), 2257-2261, 2003 | 73 | 2003 |
| High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate Y Zhou, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ... Solid-state electronics 50 (11-12), 1744-1747, 2006 | 61 | 2006 |
| Electrophoretic deposition of magnesium silicates on titanium implants: Ion migration and silicide interfaces M Afshar-Mohajer, A Yaghoubi, S Ramesh, AR Bushroa, KMC Chin, ... Applied surface science 307, 1-6, 2014 | 55 | 2014 |
| Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery Y Zhou, M Li, D Wang, C Ahyi, CC Tin, J Williams, M Park, NM Williams, ... Applied physics letters 88 (11), 2006 | 55 | 2006 |
| Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition ZC Feng, CC Tin, R Hu, J Williams Thin Solid Films 266 (1), 1-7, 1995 | 53 | 1995 |
| Reduction of etch pits in heteroepitaxial growth of 3C SiC on silicon CC Tin, R Hu, RL Coston, J Park Journal of crystal growth 148 (1-2), 116-124, 1995 | 50 | 1995 |
| Photoinduced transient spectroscopy and photoluminescence studies of copper contaminated liquid‐encapsulated Czochralski‐grown semi‐insulating GaAs CC Tin, CK Teh, FL Weichman Journal of applied physics 62 (6), 2329-2336, 1987 | 45 | 1987 |
