| A 10nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, Self-Aligned Quad Patterning, contact over active gate … C Auth, A Aliyarukunju, M Asoro, D Bergstrom, V Bhagwat, J Birdsall, ... 2017 IEEE International Electron Devices Meeting (IEDM), 29.1. 1-29.1. 4, 2017 | 414 | 2017 |
| Low-k interconnect stack with thick metal 9 redistribution layer and Cu die bump for 45nm high volume manufacturing D Ingerly, S Agraharam, D Becher, V Chikarmane, K Fischer, R Grover, ... 2008 International Interconnect Technology Conference, 216-218, 2008 | 191 | 2008 |
| High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond Q Liu, M Vinet, J Gimbert, N Loubet, R Wacquez, L Grenouillet, Y Le Tiec, ... 2013 IEEE International Electron Devices Meeting, 9.2. 1-9.2. 4, 2013 | 119 | 2013 |
| Non-volatile RRAM embedded into 22FFL FinFET technology O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ... 2019 Symposium on VLSI Technology, T230-T231, 2019 | 65 | 2019 |
| Differential gene expression analysis in antimony-unresponsive Indian kala azar (visceral leishmaniasis) clinical isolates by DNA microarray N Singh, R Almeida, H Kothari, P Kumar, G Mandal, M Chatterjee, ... Parasitology 134 (6), 777-787, 2007 | 63 | 2007 |
| Reliability challenges for the 10nm node and beyond JH Stathis, M Wang, RG Southwick, EY Wu, BP Linder, EG Liniger, ... 2014 IEEE International Electron Devices Meeting, 20.6. 1-20.6. 4, 2014 | 43 | 2014 |
| FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node Q Liu, B DeSalvo, P Morin, N Loubet, S Pilorget, F Chafik, S Maitrejean, ... 2014 IEEE International Electron Devices Meeting, 9.1. 1-9.1. 4, 2014 | 38 | 2014 |
| A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies B DeSalvo, P Morin, M Pala, G Ghibaudo, O Rozeau, Q Liu, A Pofelski, ... 2014 IEEE international electron devices meeting, 7.2. 1-7.2. 4, 2014 | 32 | 2014 |
| SiGe composition and thickness effects on NBTI in replacement metal gate/high-κ technologies P Srinivasan, J Fronheiser, K Akarvardar, A Kerber, LF Edge, ... 2014 IEEE International Reliability Physics Symposium, 6A. 3.1-6A. 3.6, 2014 | 23 | 2014 |
| Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement H Kothari, A Ramamoorthy, R Akis, SM Goodnick, DK Ferry, JL Reno, ... Journal of Applied Physics 103 (1), 2008 | 20 | 2008 |
| Intrinsic dielectric stack reliability of a high performance bulk planar 20nm replacement gate high-k metal gate technology and comparison to 28nm gate first high-k metal gate … W McMahon, C Tian, S Uppal, H Kothari, M Jin, G LaRosa, T Nigam, ... 2013 IEEE international reliability physics symposium (IRPS), 4C. 4.1-4C. 4.4, 2013 | 17 | 2013 |
| New layout dependency in high-k/metal gate MOSFETs M Hamaguchi, D Nair, D Jaeger, H Nishimura, W Li, MH Na, C Bernicot, ... 2011 International Electron Devices Meeting, 25.6. 1-25.6. 4, 2011 | 12 | 2011 |
| Process dependence of AC/DC PBTI in HKMG n-MOSFETs W Liu, G La Rosa, C Tian, S Boffoli, F Guarin, WL Lai, V Narayanan, ... 2014 IEEE International Reliability Physics Symposium, XT. 6.1-XT. 6.5, 2014 | 6 | 2014 |
| Dependence of process parameters on planarization isolation and etching of sloped vias in polyimides for GaAs ICs JK Singh, A Roybardhan, HS Kothari, BR Singh, WS Khokle Proceedings of the IEEE 75 (6), 850-852, 1987 | 5 | 1987 |
| Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors M Jin, CE Tian, G La Rosa, S Uppal, W Mcmahon, H Kothari, Y Liu, ... 2013 IEEE International Reliability Physics Symposium (IRPS), PI. 3.1-PI. 3.5, 2013 | 4 | 2013 |
| Deep reactive ion etching of silica for planar lightwave circuits using indigenously developed ECR/RIE system JP Pachauri, A Baby, N Chaturvedi, HS Kothari, A Singh, BR Singh, ... Photonics 2000: International Conference on Fiber Optics and Photonics 4417 …, 2001 | 4 | 2001 |
| NFET effective work function improvement via stress memorization technique in replacement metal gate technology Y Liu, HV Meer, O Gluschenkov, X Yang, F Sato, KH Cho, M Ganz, ... 2013 Symposium on VLSI Technology, T198-T199, 2013 | 3 | 2013 |
| Air bridge and via hole technology for GaAs based microwave devices JK Singh, OP Daga, HS Kothari, BR Singh, WS Khokle Microelectronics Journal 19 (5), 23-27, 1988 | 3 | 1988 |
| Effect of I/O oxide process optimization on the nbti dependence of Tinvscaling for a 20 nm bulk planar Replacement Gate process CE Tian, G La Rosa, W Liu, M Jin, WL Lai, S Siddiqui, F Guarin, H Kothari, ... 2014 IEEE International Reliability Physics Symposium, PI. 3.1-PI. 3.5, 2014 | 1 | 2014 |
| Optoelectronic Integreated Circuits for Photonic Systems BR Singh, DC Dumka, RC Ramola, KS Yadav, S Johri, HS Kothari IETE Journal of Research 38 (2-3), 147-162, 1992 | 1 | 1992 |
