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Siddhartha Dhar
Siddhartha Dhar
Institute for Microelectronics, TU Wien, Austria
Verified email at iue.tuwien.ac.at
Title
Cited by
Cited by
Year
The effect of general strain on the band structure and electron mobility of silicon
E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007
2332007
Electron mobility model for strained-Si devices
S Dhar, H Kosina, V Palankovski, SE Ungersböck, S Selberherr
IEEE Transactions on Electron Devices 52 (4), 527-533, 2005
1342005
Electron Mobility Model for Stressed Silicon Including Strain-Dependent Mass
S Dhar, E Ungersbock, H Kosina, T Grasser, S Selberherr
IEEE Transactions on Nanotechnology 6 (1), 97-100, 2007
632007
Two-band k· p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility
V Sverdlov, G Karlowatz, S Dhar, H Kosina, S Selberherr
Solid-State Electronics 52 (10), 1563-1568, 2008
382008
Physical modeling of electron mobility enhancement for arbitrarily strained silicon
E Ungersboeck, S Dhar, G Karlowatz, H Kosina, S Selberherr
Journal of Computational Electronics 6, 55-58, 2007
332007
Physical understanding of alloy scattering in SiGe channel for high-performance strained pFETs
C Jeong, HH Park, S Dhar, S Park, K Lee, S Jin, W Choi, UH Kwon, ...
2013 IEEE International Electron Devices Meeting, 12.2. 1-12.2. 4, 2013
142013
The effect of uniaxial stress on band structure and electron mobility of silicon
E Ungersboeck, W Gös, S Dhar, H Kosina, S Selberherr
Mathematics and Computers in Simulation 79 (4), 1071-1077, 2008
122008
Analytical mobility modeling for strained silicon-based devices
S Dhar
TU Wien, 2007
112007
Advanced 200-mm RF SOI Technology exhibiting 78 fs RON× COFF and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM
F Gianesello, A Fleury, F Julien, J Dura, S Monfray, S Dhar, CA Legrand, ...
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 191-194, 2022
72022
High-field electron mobility model for strained-silicon devices
S Dhar, H Kosina, G Karlowatz, SE Ungersboeck, T Grasser, S Selberherr
IEEE transactions on electron devices 53 (12), 3054-3062, 2006
72006
On the degradation of field-plate assisted RESURF power devices
BK Boksteen, S Dhar, A Ferrara, A Heringa, RJE Hueting, GEJ Koops, ...
2012 International Electron Devices Meeting, 13.4. 1-13.4. 4, 2012
62012
Hot carrier degradation of HV-SOI devices under off-and on-state current conditions
R Van Dalen, S Dhar, A Heringa, MJ Swanenberg, AB Van Der Wal, ...
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
62011
Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon
S Dhar, G Karlowatz, E Ungersboeck, H Kosina
2005 International Conference On Simulation of Semiconductor Processes and …, 2005
52005
Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications
S Dhar, HK Noh, SJ Kim, HW Kim, Z Wu, WS Lee, KK Bhuwalka, JC Kim, ...
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
42016
Analytical mobility models for strained silicon-based devices
S Dhar
Technische Universität Wien, 2007
42007
Extraction of the electric field in field plate assisted RESURF devices
BK Boksteen, S Dhar, A Heringa, GEJ Koops, RJE Hueting
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
32012
Analytical modeling of electron mobility in strained germanium
S Dhar, E Ungersboeck, H Kosina, T Grasser, S Selberherr
2006 International Conference on Simulation of Semiconductor Processes and …, 2006
32006
Performance trade-off of RFSOI switches under scaled bias conditions
S Dhar, S Monfray, F Gianesello, F Julien, J Dura, CA Legrand, ...
2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2023
22023
Monte Carlo Simulation of the Electron Mobility in Strained Silicon
S Dhar, E Ungersböck, M Nedjalkov, V Palankovski
Proceedings of the International Scientific and Applied Science Conference …, 2006
12006
A Tensorial High-Field Electron Mobility Model for Strained Silicon
S Dhar, H Kosina, G Karlowatz, E Ungersboeck, T Grasser, S Selberherr
2006 International SiGe Technology and Device Meeting, 1-2, 2006
12006
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