The effect of general strain on the band structure and electron mobility of silicon E Ungersboeck, S Dhar, G Karlowatz, V Sverdlov, H Kosina, S Selberherr
IEEE Transactions on Electron Devices 54 (9), 2183-2190, 2007
234 2007 Electron mobility model for strained-Si devices S Dhar, H Kosina, V Palankovski, SE Ungersböck, S Selberherr
IEEE Transactions on Electron Devices 52 (4), 527-533, 2005
135 2005 Electron Mobility Model for S Dhar, E Ungersbock, H Kosina, T Grasser, S Selberherr
IEEE Transactions on Nanotechnology 6 (1), 97-100, 2007
63 2007 Two-band k· p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility V Sverdlov, G Karlowatz, S Dhar, H Kosina, S Selberherr
Solid-State Electronics 52 (10), 1563-1568, 2008
38 2008 Physical modeling of electron mobility enhancement for arbitrarily strained silicon E Ungersboeck, S Dhar, G Karlowatz, H Kosina, S Selberherr
Journal of Computational Electronics 6, 55-58, 2007
33 2007 Physical understanding of alloy scattering in SiGe channel for high-performance strained pFETs C Jeong, HH Park, S Dhar, S Park, K Lee, S Jin, W Choi, UH Kwon, ...
2013 IEEE International Electron Devices Meeting, 12.2. 1-12.2. 4, 2013
14 2013 The effect of uniaxial stress on band structure and electron mobility of silicon E Ungersboeck, W Gös, S Dhar, H Kosina, S Selberherr
Mathematics and Computers in Simulation 79 (4), 1071-1077, 2008
12 2008 Analytical mobility modeling for strained silicon-based devices S Dhar
TU Wien, 2007
11 2007 Advanced 200-mm RF SOI Technology exhibiting 78 fs RON× COFF and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM F Gianesello, A Fleury, F Julien, J Dura, S Monfray, S Dhar, CA Legrand, ...
2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 191-194, 2022
7 2022 High-field electron mobility model for strained-silicon devices S Dhar, H Kosina, G Karlowatz, SE Ungersboeck, T Grasser, S Selberherr
IEEE transactions on electron devices 53 (12), 3054-3062, 2006
7 2006 On the degradation of field-plate assisted RESURF power devices BK Boksteen, S Dhar, A Ferrara, A Heringa, RJE Hueting, GEJ Koops, ...
2012 International Electron Devices Meeting, 13.4. 1-13.4. 4, 2012
6 2012 Hot carrier degradation of HV-SOI devices under off-and on-state current conditions R Van Dalen, S Dhar, A Heringa, MJ Swanenberg, AB Van Der Wal, ...
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
6 2011 Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon S Dhar, G Karlowatz, E Ungersboeck, H Kosina
2005 International Conference On Simulation of Semiconductor Processes and …, 2005
5 2005 Impact of BTBT, stress and interface charge on optimum Ge in SiGe pMOS for low power applications S Dhar, HK Noh, SJ Kim, HW Kim, Z Wu, WS Lee, KK Bhuwalka, JC Kim, ...
2016 International Conference on Simulation of Semiconductor Processes and …, 2016
4 2016 Analytical mobility models for strained silicon-based devices S Dhar
Technische Universität Wien, 2007
4 2007 Extraction of the electric field in field plate assisted RESURF devices BK Boksteen, S Dhar, A Heringa, GEJ Koops, RJE Hueting
2012 24th International Symposium on Power Semiconductor Devices and ICs …, 2012
3 2012 Analytical modeling of electron mobility in strained germanium S Dhar, E Ungersboeck, H Kosina, T Grasser, S Selberherr
2006 International Conference on Simulation of Semiconductor Processes and …, 2006
3 2006 Performance trade-off of RFSOI switches under scaled bias conditions S Dhar, S Monfray, F Gianesello, F Julien, J Dura, CA Legrand, ...
2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in …, 2023
2 2023 Monte Carlo Simulation of the Electron Mobility in Strained Silicon S Dhar, E Ungersböck, M Nedjalkov, V Palankovski
Proceedings of the International Scientific and Applied Science Conference …, 2006
1 2006 A Tensorial High-Field Electron Mobility Model for Strained Silicon S Dhar, H Kosina, G Karlowatz, E Ungersboeck, T Grasser, S Selberherr
2006 International SiGe Technology and Device Meeting, 1-2, 2006
1 2006 
Siegfried SelberherrInstitute for Microelectronics, TU WienGeverifieerd e-mailadres voor TUWien.ac.at
