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Joe McGlone
Joe McGlone
Research Scientist, ECE and IMR at Ohio State University
Verified email at osu.edu - Homepage
Title
Cited by
Cited by
Year
Modulation-doped β-(Al0. 2Ga0. 8) 2O3/Ga2O3 field-effect transistor
S Krishnamoorthy, Z Xia, C Joishi, Y Zhang, J McGlone, J Johnson, ...
Applied Physics Letters 111 (2), 2017
3362017
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
1712019
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
1482019
Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3
Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ...
physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020
1212020
Trapping Effects in Si 𝛿-Doped β-Ga2O3 MESFETs on an Fe-Doped β-Ga2O3 Substrate
JF Mcglone, Z Xia, Y Zhang, C Joishi, S Lodha, S Rajan, SA Ringel, ...
IEEE Electron Device Letters 39 (7), 2018
1152018
Evaluation of Low-Temperature Saturation Velocity in -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors
Y Zhang, Z Xia, J Mcglone, W Sun, C Joishi, AR Arehart, SA Ringel, ...
IEEE Transactions on Electron Devices 66 (3), 1574-1578, 2019
1022019
High electron density β-(Al0. 17Ga0. 83) 2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer
NK Kalarickal, Z Xia, JF McGlone, Y Liu, W Moore, AR Arehart, SA Ringel, ...
Journal of Applied Physics 127 (21), 2020
1002020
Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ...
APL Materials 8 (2), 2020
802020
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
C Joishi, Z Xia, J McGlone, Y Zhang, AR Arehart, S Ringel, S Lodha, ...
Applied Physics Letters 113 (12), 2018
772018
Mechanism of Si doping in plasma assisted MBE growth of β-Ga2O3
NK Kalarickal, Z Xia, J McGlone, S Krishnamoorthy, W Moore, M Brenner, ...
Applied Physics Letters 115 (15), 2019
722019
Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors
NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ...
IEEE Transactions on Electron Devices 68 (1), 29-35, 2020
642020
Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs
JF McGlone, Z Xia, C Joishi, S Lodha, S Rajan, S Ringel, AR Arehart
Applied Physics Letters 115 (15), 2019
622019
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3
H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ...
Applied Physics Letters 117 (17), 2020
402020
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
JF McGlone, H Ghadi, E Cornuelle, A Armstrong, G Burns, Z Feng, ...
Journal of Applied Physics 133 (4), 2023
222023
β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy
AV Dheenan, JF McGlone, NK Kalarickal, HL Huang, M Brenner, J Hwang, ...
Applied Physics Letters 121 (11), 2022
132022
Velocity saturation in La-doped BaSnO3 thin films
H Chandrasekar, J Cheng, T Wang, Z Xia, NG Combs, CR Freeze, ...
Applied Physics Letters 115 (9), 2019
132019
Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3
H Ghadi, JF McGlone, E Cornuelle, Z Feng, Y Zhang, L Meng, H Zhao, ...
APL Materials 10 (10), 2022
92022
Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density> 550 mA/mm
NK Kalarickal, A Dheenan, JF McGlone, S Dhara, M Brenner, SA Ringel, ...
Applied Physics Letters 122 (11), 2023
82023
Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
H Ghadi, JF McGlone, E Cornuelle, A Senckowski, S Sharma, MH Wong, ...
APL Materials 11 (11), 2023
62023
Ferroelectric HfO2 Thin Films for FeFET Memory Devices
JF McGlone
Journal of the Microelectronic Engineering Conference 22 (1), 24, 2016
62016
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