Nikolay Gorbachuk
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Основы импедансной спектроскопии композитов
НА Поклонский, НИ Горбачук
Белорусский государственный университет, 2005
Negative capacitance (impedance of the inductive type) of silicon p+-n junctions irradiated with fast electrons
NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii
Semiconductors 40 (7), 803-807, 2006
Electrical properties of silicon diodes with p+ n junctions irradiated with 197Au+ 26 swift heavy ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, AV Petrov, SB Lastovskii, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
Nanostructuring of crystalline grains of natural diamond using ionizing radiation
NA Poklonski, TM Lapchuk, NI Gorbachuk, VA Nikolaenko, IV Bachuchin
Semiconductors 39 (8), 894-897, 2005
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
NA Poklonski, NI Gorbachuk, SV Shpakovski, A Wieck
Technical Physics 55 (10), 1463-1471, 2010
Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, VA Filipenia, SB Lastovskii, ...
Microelectronics Reliability 50 (6), 813-820, 2010
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
NA Poklonski, NI Gorbachuk, SV Shpakovski, SB Lastovskii, A Wieck
Semiconductors 44 (3), 380-384, 2010
Electrical conductivity of composite materials based on fine-particle silicon near the metal–insulator transition
NA Poklonskii, NI Gorbachuk, IV Pototskii, DA Trofimchuk
Inorganic materials 40 (11), 1133-1138, 2004
Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+ n-junction-defect layer formed by 250 MeV krypton implantation
NA Poklonski, NI Gorbachuk, SV Shpakovski, VA Filipenia, VA Skuratov, ...
Physica B: Condensed Matter 404 (23-24), 4667-4670, 2009
Magnetoresistive effect and impedance spectroscopy of Co‐implanted polyimide
VN Popok, MG Lukashevich, NI Gorbachuk, VB Odzhaev, RI Khaibullin, ...
physica status solidi (a) 203 (7), 1545-1549, 2006
Electrical properties of carbon nanotubes/WS2 nanotubes (nanoparticles) hybrid films
VK Ksenevich, NI Gorbachuk, V Ho, MV Shuba, PP Kuzhir, ...
Наносистемы: физика, химия, математика 7 (1), 2016
Optical spectroscopy of the surface of nanoporous diamond films
AV Khomich, MV Kanzyuba, II Vlasov, VG Ral’chenko, NI Gorbachuk
Journal of Applied Spectroscopy 78 (4), 563, 2011
Effects of fluences of irradiation with 107 MeV krypton ions on the recovery charge of silicon p+n-diodes
NA Poklonski, NI Gorbachuk, MI Tarasik, SV Shpakovski, VA Filipenia, ...
Acta Physica Polonica A 120 (1), 111-114, 2011
Formation of coloring complexes in glass colored with cerium and titanium oxides
EE Trusova, NM Bobkova, VS Gurin, NI Gorbachuk
Glass and Ceramics 64 (9-10), 346-348, 2007
Измерение методом ЭСР размагничивающего поля на поверхности металлических образцов
НА Поклонский, ТМ Лапчук, НИ Горбачук
Журнал прикладной спектроскопии 68 (4), 419-422, 2001
Impedance spectroscopy of polycrystalline tin dioxide films
D Adamchuck, VK Ksenevich, N Gorbachuk, V Shimanskij
Devices and Methods of Measurements 7 (3), 312-321, 2016
Effect of the moisture content on the electrical conductivity of SiO2/LiCl xerogels
NI Gorbachuk, VS Gurin, NA Poklonski
Glass physics and chemistry 27 (6), 520-526, 2001
Индуктивная составляющая импеданса облученных электронами полупровод-никовых барьерных структур
НА Поклонский, НИ Горбачук, СБ Ластовский, АВ Лапаник
БГУ, 2001
Физика электрического контакта металл/полупроводник
НА Поклонский, НИ Горбачук, НМ Лапчук
Белорусский государственный университет, 2003
Impedance of Si/SiO 2 composites in the vicinity of the percolation threshold
NA Poklonski, NI Gorbachuk, D Aleinikova
Physics of the Solid State 53 (3), 462-466, 2011
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