Nikolay Gorbachuk
Title
Cited by
Cited by
Year
Основы импедансной спектроскопии композитов
НА Поклонский, НИ Горбачук
Белорусский государственный университет, 2005
77*2005
Negative capacitance (impedance of the inductive type) of silicon p+-n junctions irradiated with fast electrons
NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii
Semiconductors 40 (7), 803-807, 2006
50*2006
Electrical properties of silicon diodes with p+ n junctions irradiated with 197Au+ 26 swift heavy ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, AV Petrov, SB Lastovskii, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
302008
Nanostructuring of crystalline grains of natural diamond using ionizing radiation
NA Poklonski, TM Lapchuk, NI Gorbachuk, VA Nikolaenko, IV Bachuchin
Semiconductors 39 (8), 894-897, 2005
30*2005
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
NA Poklonski, NI Gorbachuk, SV Shpakovski, A Wieck
Technical Physics 55 (10), 1463-1471, 2010
28*2010
Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, VA Filipenia, SB Lastovskii, ...
Microelectronics Reliability 50 (6), 813-820, 2010
212010
Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
NA Poklonski, NI Gorbachuk, SV Shpakovski, SB Lastovskii, A Wieck
Semiconductors 44 (3), 380-384, 2010
15*2010
Electrical conductivity of composite materials based on fine-particle silicon near the metal–insulator transition
NA Poklonskii, NI Gorbachuk, IV Pototskii, DA Trofimchuk
Inorganic materials 40 (11), 1133-1138, 2004
15*2004
Kinetics of reverse resistance recovery of silicon diodes: The role of the distance the metallurgical p+ n-junction-defect layer formed by 250 MeV krypton implantation
NA Poklonski, NI Gorbachuk, SV Shpakovski, VA Filipenia, VA Skuratov, ...
Physica B: Condensed Matter 404 (23-24), 4667-4670, 2009
142009
Magnetoresistive effect and impedance spectroscopy of Co‐implanted polyimide
VN Popok, MG Lukashevich, NI Gorbachuk, VB Odzhaev, RI Khaibullin, ...
physica status solidi (a) 203 (7), 1545-1549, 2006
142006
Electrical properties of carbon nanotubes/WS2 nanotubes (nanoparticles) hybrid films
VK Ksenevich, NI Gorbachuk, V Ho, MV Shuba, PP Kuzhir, ...
Наносистемы: физика, химия, математика 7 (1), 2016
132016
Optical spectroscopy of the surface of nanoporous diamond films
AV Khomich, MV Kanzyuba, II Vlasov, VG Ral’chenko, NI Gorbachuk
Journal of Applied Spectroscopy 78 (4), 563, 2011
13*2011
Effects of fluences of irradiation with 107 MeV krypton ions on the recovery charge of silicon p+n-diodes
NA Poklonski, NI Gorbachuk, MI Tarasik, SV Shpakovski, VA Filipenia, ...
Acta Physica Polonica A 120 (1), 111-114, 2011
112011
Formation of coloring complexes in glass colored with cerium and titanium oxides
EE Trusova, NM Bobkova, VS Gurin, NI Gorbachuk
Glass and Ceramics 64 (9-10), 346-348, 2007
11*2007
Измерение методом ЭСР размагничивающего поля на поверхности металлических образцов
НА Поклонский, ТМ Лапчук, НИ Горбачук
Журнал прикладной спектроскопии 68 (4), 419-422, 2001
92001
Impedance spectroscopy of polycrystalline tin dioxide films
D Adamchuck, VK Ksenevich, N Gorbachuk, V Shimanskij
Devices and Methods of Measurements 7 (3), 312-321, 2016
82016
Effect of the moisture content on the electrical conductivity of SiO2/LiCl xerogels
NI Gorbachuk, VS Gurin, NA Poklonski
Glass physics and chemistry 27 (6), 520-526, 2001
8*2001
Индуктивная составляющая импеданса облученных электронами полупровод-никовых барьерных структур
НА Поклонский, НИ Горбачук, СБ Ластовский, АВ Лапаник
БГУ, 2001
8*2001
Физика электрического контакта металл/полупроводник
НА Поклонский, НИ Горбачук, НМ Лапчук
Белорусский государственный университет, 2003
72003
Impedance of Si/SiO 2 composites in the vicinity of the percolation threshold
NA Poklonski, NI Gorbachuk, D Aleinikova
Physics of the Solid State 53 (3), 462-466, 2011
6*2011
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Articles 1–20