R M Biefeld
Cited by
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The band-gap bowing of alloys
SR Lee, AF Wright, MH Crawford, GA Petersen, J Han, RM Biefeld
Applied physics letters 74 (22), 3344-3346, 1999
The effect of on morphology evolution during GaN metalorganic chemical vapor deposition
J Han, TB Ng, RM Biefeld, MH Crawford, DM Follstaedt
Applied physics letters 71 (21), 3114-3116, 1997
A GaAsxP1−x/GaP strained‐layer superlattice
GC Osbourn, RM Biefeld, PL Gourley
Applied Physics Letters 41 (2), 172-174, 1982
The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
RM Biefeld
Materials Science and Engineering: R: Reports 36 (4), 105-142, 2002
Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
SR Kurtz, RM Biefeld, LR Dawson, KC Baucom, AJ Howard
Applied physics letters 64 (7), 812-814, 1994
Ordering-induced band-gap reduction in InAs 1− x Sb x (x≊ 0.4) alloys and superlattices
SR Kurtz, LR Dawson, RM Biefeld, DM Follstaedt, BL Doyle
Physical Review B 46 (3), 1909, 1992
The preparation of InSb and InAs1− x Sbx by metalorganic chemical vapor deposition
RM Biefeld
Journal of Crystal growth 75 (2), 255-263, 1986
InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
AA Allerman, RM Biefeld, SR Kurtz
Applied physics letters 69 (4), 465-467, 1996
Strain relief in compositionally graded InAsxSb1− x buffer layers and InAsxSb1− x/InSb strained-layer superlattices grown by MOCVD
RM Biefeld, CR Hills, SR Lee
Journal of crystal growth 91 (4), 515-526, 1988
OMVPE growth and gas-phase reactions of AlGaN for UV emitters
J Han, JJ Figiel, MH Crawford, MA Banas, ME Bartram, RM Biefeld, ...
Journal of crystal growth 195 (1-4), 291-296, 1998
Strain measurements by channeling angular scans
ST Picraux, LR Dawson, GC Osbourn, RM Biefeld, WK Chu
Applied physics letters 43 (11), 1020-1022, 1983
Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
SR Kurtz, RM Biefeld, AA Allerman, AJ Howard, MH Crawford, ...
Applied physics letters 68 (10), 1332-1334, 1996
Ionic Conductivity of Li2 O‐Based Mixed Oxides and the Effects of Moisture and LiOH on Their Electrical and Structural Properties
RM Biefeld, RT Johnson Jr
Journal of the Electrochemical Society 126 (1), 1, 1979
Principles and applications of semiconductor strained-layer superlattices
GC Osboum, PL Gourley, IJ Fritz, RM Biefeld, LR Dawson, TE Zipperian
Semiconductors and Semimetals 24, 459-503, 1987
Extended infrared response of InAsSb strained‐layer superlattices
SR Kurtz, GC Osbourn, RM Biefeld, LR Dawson, HJ Stein
Applied physics letters 52 (10), 831-833, 1988
The Preparation and Characterization of Strained-Layer Superlattices in the GaAs + GaP System
IJ Biefeld, R. M., Osbourn, G. C., Gourley, P. L., and Fritz
Journal of Electronic Materials 12 (5), 903, 1983
Photoluminescence and the band structure of InAsSb strained‐layer superlattices
SR Kurtz, GC Osbourn, RM Biefeld, SR Lee
Applied physics letters 53 (3), 216-218, 1988
Ionic conductivity in solid electrolytes based on lithium aluminosilicate glass and glass‐ceramic
RT Johnson Jr, RM Biefeld, ML Knotek, B Morosin
Journal of the Electrochemical Society 123 (5), 680, 1976
In situ measurement of the metalorganic and hydride partial pressures in a MOCVD reactor using ultraviolet absorption spectroscopy
GA Hebner, KP Killeen, RM Biefeld
Journal of crystal growth 98 (3), 293-301, 1989
Epitaxial growth of InSb on GaAs by metalorganic chemical vapor deposition
RM Biefeld, GA Hebner
Applied physics letters 57 (15), 1563-1565, 1990
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