Benjamin VINCENT
Benjamin VINCENT
Coventor (a LAM Research Company)
Adresse e-mail validée de coventor.com
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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ...
Applied Physics Letters 99 (15), 152103, 2011
2162011
GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ...
Optics express 20 (25), 27297-27303, 2012
1622012
Method for Growing a Monocrystalline Tin-Containing Semiconductor Material
B Vincent, F Gencarelli, R Loo, M Caymax
US Patent App. 14/008,560, 2014
1552014
Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ...
Microelectronic Engineering 88 (4), 342-346, 2011
1412011
Silicon-based photonic integration beyond the telecommunication wavelength range
G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014
1152014
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ...
ECS Journal of Solid State Science and Technology 2 (4), P134, 2013
1032013
Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6
F Gencarelli, B Vincent, L Souriau, O Richard, W Vandervorst, R Loo, ...
Thin Solid Films 520 (8), 3211-3215, 2012
942012
Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman, B De Jaeger, L Witters, ...
Materials Science in Semiconductor Processing 15 (6), 588-600, 2012
852012
Silicon-based heterogeneous photonic integrated circuits for the mid-infrared
G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ...
Optical Materials Express 3 (9), 1523-1536, 2013
762013
High quality Germanium-On-Insulator wafers with excellent hole mobility
QT Nguyen, JF Damlencourt, B Vincent, L Clavelier, Y Morand, P Gentil, ...
Solid-State Electronics 51 (9), 1172-1179, 2007
762007
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ...
2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011
642011
FinFET device with dual-strained channels and method for manufacturing thereof
G Eneman, B Vincent, VY Thean
US Patent 9,171,904, 2015
612015
FinFET device with dual-strained channels and method for manufacturing thereof
G Eneman, B Vincent, VY Thean
US Patent 9,171,904, 2015
532015
Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
B Vincent, JF Damlencourt, V Delaye, R Gassilloud, L Clavelier, Y Morand
Applied physics letters 90 (7), 074101, 2007
532007
Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study
B Vincent, JF Damlencourt, P Rivallin, E Nolot, C Licitra, Y Morand, ...
Semiconductor science and technology 22 (3), 237, 2007
522007
Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
K Martens, R Rooyackers, A Firrincieli, B Vincent, R Loo, B De Jaeger, ...
Applied Physics Letters 98 (1), 013504, 2011
482011
Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ...
2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012
442012
Ge1− xSnx stressors for strained-Ge CMOS
S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ...
Solid-state electronics 60 (1), 53-57, 2011
432011
Molecular beam deposition of on heterostructure and impact of a Ge-cap interfacial layer
C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ...
Applied Physics Letters 98 (19), 192110, 2011
412011
Stress simulations for optimal mobility group IV p-and nMOS FinFETs for the 14 nm node and beyond
G Eneman, DP Brunco, L Witters, B Vincent, P Favia, A Hikavyy, ...
2012 International Electron Devices Meeting, 6.5. 1-6.5. 4, 2012
402012
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