Поклонский, Николай Александрович (NA Poklonski)
Поклонский, Николай Александрович (NA Poklonski)
Belarusian State University, Faculty of Physics, 4 Nezavisimosti Av., 220030 Minsk, Belarus
Verified email at bsu.by
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Основы импедансной спектроскопии композитов
НА Поклонский, НИ Горбачук
Минск: БГУ, 2005
77*2005
Magneto-optical transport properties of monolayer MoS2 on polar substrates
CV Nguyen, NN Hieu, NA Poklonski, VV Ilyasov, L Dinh, TC Phong, ...
Physical Review B 96 (12), 125411, 2017
742017
Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities
NA Poklonski, SA Vyrko, AG Zabrodskii
Physics of the Solid State 46 (6), 1101-1106, 2004
47*2004
Negative capacitance (impedance of the inductive type) of silicon p+-n junctions irradiated with fast electrons
NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii
Semiconductors 40 (7), 803-807, 2006
43*2006
First-principles study of the structural and electronic properties of graphene/MoS2 interfaces
NN Hieu, HV Phuc, VV Ilyasov, ND Chien, NA Poklonski, N Van Hieu, ...
Journal of Applied Physics 122 (10), 104301, 2017
402017
Electronic structure model of a metal-filled carbon nanotube
NA Poklonskii, EF Kislyakov, GG Fedoruk, SA Vyrko
Physics of the Solid State 42 (10), 1966-1971, 2000
39*2000
Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects
NA Poklonski, VF Stelmakh
physica status solidi (b) 117 (1), 93-99, 1983
391983
Screening of electrostatic fields in semiconductors by multicharged defects
NA Poklonskii, VF Stelmakh, VD Tkachev, SV Voitikov
physica status solidi (b) 88 (2), K165-K168, 1978
371978
Статистическая физика полупроводников
НА Поклонский, СА Вырко, СЛ Поденок
М.: КомКнига (УРСС), 2005
33*2005
A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga
NA Poklonskii, SY Lopatin, AG Zabrodskii
Physics of the Solid State 42 (3), 441-449, 2000
33*2000
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
NA Poklonskii, AI Syaglo, G Biskupski
Semiconductors 33 (4), 402-406, 1999
31*1999
Tuning the Electronic Properties, Effective mass and carrier mobility of MoS 2 monolayer by strain engineering: first-principle calculations
HV Phuc, NN Hieu, BD Hoi, NV Hieu, TV Thu, NM Hung, VV Ilyasov, ...
Journal of Electronic Materials 47 (1), 730-736, 2018
302018
Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, AV Petrov, SB Lastovskii, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
302008
Uniaxially deformed (5, 5) carbon nanotube: Structural transitions
NA Poklonski, EF Kislyakov, NN Hieu, SA Vyrko, AM Popov, YE Lozovik
Chemical Physics Letters 464 (4-6), 187-191, 2008
30*2008
Interaction of a graphene sheet with a ferromagnetic metal plate
AD Phan, NA Viet, NA Poklonski, LM Woods, CH Le
Physical Review B 86 (15), 155419 (5 pp.), 2012
282012
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
NA Poklonski, NI Gorbachuk, SV Shpakovski, A Wieck
Technical Physics 55 (10), 1463-1471, 2010
28*2010
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)
NA Poklonski, SA Vyrko, AG Zabrodskii
Semiconductors 42 (12), 1388, 2008
26*2008
Nanostructuring of crystalline grains of natural diamond using ionizing radiation
NA Poklonski, TM Lapchuk, NI Gorbachuk, VA Nikolaenko, IV Bachuchin
Semiconductors 39 (8), 894-897, 2005
26*2005
Totally symmetric vibrational modes of fullerene C 60
SA Vyrko, EF Kislyakov, NA Poklonskii
Journal of Experimental and Theoretical Physics Letters 71 (12), 508-510, 2000
25*2000
Stationary hopping photoconduction among multiply charged impurity atoms in crystals
NA Poklonskii, SY Lopatin
Physics of the Solid State 40 (10), 1636-1640, 1998
25*1998
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