Поклонский, Николай Александрович (NA Poklonski)
Поклонский, Николай Александрович (NA Poklonski)
Belarusian State University, Faculty of Physics, 4 Nezavisimosti Av., 220030 Minsk, Belarus
Verified email at bsu.by
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Основы импедансной спектроскопии композитов
НА Поклонский, НИ Горбачук
Минск: БГУ, 2005
Magneto-optical transport properties of monolayer MoS2 on polar substrates
CV Nguyen, NN Hieu, NA Poklonski, VV Ilyasov, L Dinh, TC Phong, ...
Physical Review B 96 (12), 125411, 2017
Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities
NA Poklonski, SA Vyrko, AG Zabrodskii
Physics of the Solid State 46 (6), 1101-1106, 2004
Negative capacitance (impedance of the inductive type) of silicon p+-n junctions irradiated with fast electrons
NA Poklonski, SV Shpakovski, NI Gorbachuk, SB Lastovskii
Semiconductors 40 (7), 803-807, 2006
First-principles study of the structural and electronic properties of graphene/MoS2 interfaces
NN Hieu, HV Phuc, VV Ilyasov, ND Chien, NA Poklonski, N Van Hieu, ...
Journal of Applied Physics 122 (10), 104301, 2017
Electronic structure model of a metal-filled carbon nanotube
NA Poklonskii, EF Kislyakov, GG Fedoruk, SA Vyrko
Physics of the Solid State 42 (10), 1966-1971, 2000
Screening of electrostatic fields in crystalline semiconductors by electrons hopping over defects
NA Poklonski, VF Stelmakh
physica status solidi (b) 117 (1), 93-99, 1983
Screening of electrostatic fields in semiconductors by multicharged defects
NA Poklonskii, VF Stelmakh, VD Tkachev, SV Voitikov
physica status solidi (b) 88 (2), K165-K168, 1978
Статистическая физика полупроводников
НА Поклонский, СА Вырко, СЛ Поденок
М.: КомКнига (УРСС), 2005
A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge:Ga
NA Poklonskii, SY Lopatin, AG Zabrodskii
Physics of the Solid State 42 (3), 441-449, 2000
A model of how the thermal ionization energy of impurities in semiconductors depends on their concentration and compensation
NA Poklonskii, AI Syaglo, G Biskupski
Semiconductors 33 (4), 402-406, 1999
Tuning the Electronic Properties, Effective mass and carrier mobility of MoS 2 monolayer by strain engineering: first-principle calculations
HV Phuc, NN Hieu, BD Hoi, NV Hieu, TV Thu, NM Hung, VV Ilyasov, ...
Journal of Electronic Materials 47 (1), 730-736, 2018
Electrical properties of silicon diodes with p+n junctions irradiated with 197Au+26 swift heavy ions
NA Poklonski, NI Gorbachuk, SV Shpakovski, AV Petrov, SB Lastovskii, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008
Uniaxially deformed (5, 5) carbon nanotube: Structural transitions
NA Poklonski, EF Kislyakov, NN Hieu, SA Vyrko, AM Popov, YE Lozovik
Chemical Physics Letters 464 (4-6), 187-191, 2008
Interaction of a graphene sheet with a ferromagnetic metal plate
AD Phan, NA Viet, NA Poklonski, LM Woods, CH Le
Physical Review B 86 (15), 155419 (5 pp.), 2012
Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
NA Poklonski, NI Gorbachuk, SV Shpakovski, A Wieck
Technical Physics 55 (10), 1463-1471, 2010
Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)
NA Poklonski, SA Vyrko, AG Zabrodskii
Semiconductors 42 (12), 1388, 2008
Nanostructuring of crystalline grains of natural diamond using ionizing radiation
NA Poklonski, TM Lapchuk, NI Gorbachuk, VA Nikolaenko, IV Bachuchin
Semiconductors 39 (8), 894-897, 2005
Totally symmetric vibrational modes of fullerene C 60
SA Vyrko, EF Kislyakov, NA Poklonskii
Journal of Experimental and Theoretical Physics Letters 71 (12), 508-510, 2000
Stationary hopping photoconduction among multiply charged impurity atoms in crystals
NA Poklonskii, SY Lopatin
Physics of the Solid State 40 (10), 1636-1640, 1998
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