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Karl-Magnus Persson
Karl-Magnus Persson
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Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fmax > 20 GHz
M Egard, S Johansson, AC Johansson, KM Persson, AW Dey, BM Borg, ...
Nano Letters 10 (3), 809-812, 2010
1352010
A High-Frequency Transconductance Method for Characterization of High- Border Traps in III-V MOSFETs
S Johansson, M Berg, KM Persson, E Lind
IEEE Transactions on Electron Devices 60 (2), 776-781, 2012
882012
High-Frequency Performance of Self-Aligned Gate-Last Surface ChannelMOSFET
M Egard, L Ohlsson, M Arlelid, KM Persson, BM Borg, F Lenrick, ...
IEEE Electron Device Letters 33 (3), 369-371, 2012
752012
Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates
KM Persson, M Berg, MB Borg, J Wu, S Johansson, J Svensson, ...
IEEE Transactions on Electron Devices 60 (9), 2761-2767, 2013
742013
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
Z Yong, KM Persson, MS Ram, G D'Acunto, Y Liu, S Benter, J Pan, Z Li, ...
Applied Surface Science 551, 149386, 2021
672021
Low-temperature side contact to carbon nanotube transistors: Resistance distributions down to 10 nm contact length
G Pitner, G Hills, JP Llinas, KM Persson, R Park, J Bokor, S Mitra, ...
Nano letters 19 (2), 1083-1089, 2019
542019
Low-frequency noise in vertical InAs nanowire FETs
KM Persson, E Lind, AW Dey, C Thelander, H Sjöland, LE Wernersson
IEEE Electron Device Letters 31 (5), 428-430, 2010
402010
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
M Berg, KM Persson, OP Kilpi, J Svensson, E Lind, LE Wernersson
2015 IEEE International Electron Devices Meeting (IEDM), 31.2. 1-31.2. 4, 2015
372015
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
AEO Persson, R Athle, P Littow, KM Persson, J Svensson, M Borg, ...
Applied Physics Letters 116 (6), 2020
332020
Electrical characterization and modeling of gate-last vertical InAs nanowire MOSFETs on Si
M Berg, OP Kilpi, KM Persson, J Svensson, M Hellenbrand, E Lind, ...
IEEE Electron Device Letters 37 (8), 966-969, 2016
332016
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
KM Persson, BG Malm, LE Wernersson
Applied Physics Letters 103 (3), 2013
312013
Hard X-ray detection using a single 100 nm diameter nanowire
J Wallentin, M Osterhoff, RN Wilke, KM Persson, LE Wernersson, ...
Nano letters 14 (12), 7071-7076, 2014
272014
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
MS Ram, KM Persson, A Irish, A Jönsson, R Timm, LE Wernersson
Nature Electronics 4 (12), 914-920, 2021
242021
Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires
KM Persson, MS Ram, OP Kilpi, M Borg, LE Wernersson
Advanced Electronic Materials 6 (6), 2000154, 2020
222020
Low-power resistive memory integrated on III–V vertical nanowire MOSFETs on silicon
MS Ram, KM Persson, M Borg, LE Wernersson
IEEE Electron Device Letters 41 (9), 1432-1435, 2020
192020
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
KM Persson, MS Ram, LE Wernersson
IEEE Journal of the Electron Devices Society 9, 564-569, 2021
122021
InAs nanowire MOSFET differential active mixer on Si‐substrate
KM Persson, M Berg, H Sjöland, E Lind, LE Wernersson
Electronics Letters 50 (9), 682-683, 2014
122014
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers
M Berg, KM Persson, J Wu, E Lind, H Sjöland, LE Wernersson
Nanotechnology 25 (48), 485203, 2014
82014
Vertical InAs nanowire MOSFETs with IDS= 1.34 mA/µm and gm= 1.19 mS/µm at VDS= 0.5 V
KM Persson, M Berg, M Borg, J Wu, H Sjöland, E Lind, LE Wernersson
70th Device Research Conference, 195-196, 2012
72012
High frequency performance of vertical InAs nanowire MOSFET
E Lind, M Egard, S Johansson, AC Johansson, BM Borg, C Thelander, ...
2010 22nd International Conference on Indium Phosphide and Related Materials …, 2010
42010
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