| Room-temperature red emission from a p-type/europium-doped/n-type gallium nitride light-emitting diode under current injection A Nishikawa, T Kawasaki, N Furukawa, Y Terai, Y Fujiwara Applied Physics Express 2 (7), 071004, 2009 | 270 | 2009 |
| Perspective: Toward efficient GaN-based red light emitting diodes using europium doping B Mitchell, V Dierolf, T Gregorkiewicz, Y Fujiwara Journal of Applied Physics 123 (16), 2018 | 125 | 2018 |
| Efficient carrier multiplication in CsPbI3 perovskite nanocrystals C de Weerd, L Gomez, A Capretti, DM Lebrun, E Matsubara, J Lin, ... Nature communications 9 (1), 4199, 2018 | 114 | 2018 |
| Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy A Nishikawa, N Furukawa, T Kawasaki, Y Terai, Y Fujiwara Applied Physics Letters 97 (5), 2010 | 103 | 2010 |
| Direct Observation of Band Structure Modifications in Nanocrystals of CsPbBr3 Perovskite J Lin, L Gomez, C De Weerd, Y Fujiwara, T Gregorkiewicz, K Suenaga Nano Letters 16 (11), 7198-7202, 2016 | 96 | 2016 |
| Hybridization of Single Nanocrystals of Cs4PbBr6 and CsPbBr3 C de Weerd, J Lin, L Gomez, Y Fujiwara, K Suenaga, T Gregorkiewicz The Journal of Physical Chemistry C 121 (35), 19490-19496, 2017 | 77 | 2017 |
| Eu luminescence center created by Mg codoping in Eu-doped GaN D Lee, A Nishikawa, Y Terai, Y Fujiwara Applied Physics Letters 100 (17), 2012 | 75 | 2012 |
| Optical orientation and alignment of excitons in ensembles of inorganic perovskite nanocrystals MO Nestoklon, SV Goupalov, RI Dzhioev, OS Ken, VL Korenev, ... Physical Review B 97 (23), 235304, 2018 | 66 | 2018 |
| Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers N Woodward, A Nishikawa, Y Fujiwara, V Dierolf Optical Materials 33 (7), 1050-1054, 2011 | 60 | 2011 |
| Present understanding of Eu luminescent centers in Eu-doped GaN grown by organometallic vapor phase epitaxy Y Fujiwara, V Dierolf Japanese Journal of Applied Physics 53 (5S1), 05FA13, 2014 | 56 | 2014 |
| Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center N Woodward, J Poplawsky, B Mitchell, A Nishikawa, Y Fujiwara, V Dierolf Applied Physics Letters 98 (1), 2011 | 56 | 2011 |
| Eu-doped GaN and InGaN monolithically stacked full-color LEDs with a wide color gamut S Ichikawa, K Shiomi, T Morikawa, D Timmerman, Y Sasaki, ... Applied Physics Express 14 (3), 031008, 2021 | 53 | 2021 |
| Multiexciton Lifetime in All-Inorganic CsPbBr3 Perovskite Nanocrystals EMLD de Jong, G Yamashita, L Gomez, M Ashida, Y Fujiwara, ... The Journal of Physical Chemistry C 121 (3), 1941-1947, 2017 | 51 | 2017 |
| The role of donor-acceptor pairs in the excitation of Eu-ions in GaN: Eu epitaxial layers B Mitchell, J Poplawsky, D Lee, A Koizumi, Y Fujiwara, V Dierolf Journal of Applied Physics 115 (20), 2014 | 51 | 2014 |
| Hybrid Mesoporous‐Silica Materials Functionalized by PtII Complexes: Correlation between the Spatial Distribution of the Active Center, Photoluminescence … K Mori, K Watanabe, Y Terai, Y Fujiwara, H Yamashita Chemistry–A European Journal 18 (36), 11371-11378, 2012 | 51 | 2012 |
| Room-temperature electroluminescence properties of Er, O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy A Koizumi, Y Fujiwara, A Urakami, K Inoue, T Yoshikane, Y Takeda Applied physics letters 83 (22), 4521-4523, 2003 | 46 | 2003 |
| Luminescence properties of Eu-doped GaN under resonant excitation and quantitative evaluation of luminescent sites R Wakamatsu, D Lee, A Koizumi, V Dierolf, Y Fujiwara Journal of Applied Physics 114 (4), 2013 | 45 | 2013 |
| Lattice site location of optical centers in GaN: Eu light emitting diode material grown by organometallic vapor phase epitaxy K Lorenz, E Alves, IS Roqan, KP O’Donnell, A Nishikawa, Y Fujiwara, ... Applied Physics Letters 97 (11), 2010 | 45 | 2010 |
| Drastic effects of hydrogen flow rate on growth characteristics and electrical/optical properties of InP grown by organometallic vapour phase epitaxy with TMIn and TBP Y Fujiwara, S Furuta, K Makita, Y Ito, Y Nonogaki, Y Takeda Journal of crystal growth 146 (1-4), 544-548, 1995 | 44 | 1995 |
| Optical excitation and external photoluminescence quantum efficiency of Eu3+ in GaN W De Boer, C McGonigle, T Gregorkiewicz, Y Fujiwara, S Tanabe, ... Scientific Reports 4 (1), 5235, 2014 | 43 | 2014 |
