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Frank Feldmann
Frank Feldmann
Verified email at ise.fraunhofer.de
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Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
F Feldmann, M Bivour, C Reichel, M Hermle, SW Glunz
Solar energy materials and solar cells 120, 270-274, 2014
7182014
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
A Richter, J Benick, F Feldmann, A Fell, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 173, 96-105, 2017
6022017
Tunnel oxide passivated contacts as an alternative to partial rear contacts
F Feldmann, M Bivour, C Reichel, H Steinkemper, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 131, 46-50, 2014
3632014
III–V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration
R Cariou, J Benick, F Feldmann, O Höhn, H Hauser, P Beutel, N Razek, ...
Nature Energy 3 (4), 326-333, 2018
3142018
Design rules for high-efficiency both-sides-contacted silicon solar cells with balanced charge carrier transport and recombination losses
A Richter, R Müller, J Benick, F Feldmann, B Steinhauser, C Reichel, ...
Nature Energy 6 (4), 429-438, 2021
3012021
Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water
A Moldovan, F Feldmann, K Kaufmann, S Richter, M Werner, C Hagendorf, ...
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 1-6, 2015
2802015
SiO2 surface passivation layers–a key technology for silicon solar cells
SW Glunz, F Feldmann
Solar Energy Materials and Solar Cells 185, 260-269, 2018
2352018
Carrier-selective contacts for Si solar cells
F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz
Applied Physics Letters 104 (18), 2014
2332014
Efficient carrier-selective p-and n-contacts for Si solar cells
F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz
Solar Energy Materials and Solar Cells 131, 100-104, 2014
2302014
The irresistible charm of a simple current flow pattern–25% with a solar cell featuring a full-area back contact
SW Glunz, F Feldmann, A Richter, M Bivour, C Reichel, H Steinkemper, ...
Proceedings of the 31st European Photovoltaic Solar Energy Conference and …, 2015
2222015
High-efficiency n-type HP mc silicon solar cells
J Benick, A Richter, R Müller, H Hauser, F Feldmann, P Krenckel, S Riepe, ...
IEEE journal of photovoltaics 7 (5), 1171-1175, 2017
2002017
Passivating contacts and tandem concepts: Approaches for the highest silicon-based solar cell efficiencies
M Hermle, F Feldmann, M Bivour, JC Goldschmidt, SW Glunz
Applied Physics Reviews 7 (2), 2020
1842020
The application of poly-Si/SiOx contacts as passivated top/rear contacts in Si solar cells
F Feldmann, C Reichel, R Müller, M Hermle
Solar Energy Materials and Solar Cells 159, 265-271, 2017
1822017
Numerical simulation of carrier-selective electron contacts featuring tunnel oxides
H Steinkemper, F Feldmann, M Bivour, M Hermle
IEEE Journal of Photovoltaics 5 (5), 1348-1356, 2015
1202015
A passivated rear contact for high-efficiency n-type silicon solar cells enabling high Vocs and FF> 82%
F Feldmann, M Bivour, C Reichel, M Hermle, SW Glunz
28th European PV solar energy conference and exhibition 30, 2013
1082013
Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent JV measurements
F Feldmann, G Nogay, P Löper, DL Young, BG Lee, P Stradins, M Hermle, ...
Solar Energy Materials and Solar Cells 178, 15-19, 2018
1072018
Simple cleaning and conditioning of silicon surfaces with UV/ozone sources
A Moldovan, F Feldmann, G Krugel, M Zimmer, J Rentsch, M Hermle, ...
Energy Procedia 55, 834-844, 2014
962014
Tunnel oxide passivating electron contacts as full‐area rear emitter of high‐efficiency p‐type silicon solar cells
A Richter, J Benick, R Müller, F Feldmann, C Reichel, M Hermle, ...
Progress in Photovoltaics: Research and Applications 26 (8), 579-586, 2018
932018
Metallisation of boron‐doped polysilicon layers by screen printed silver pastes
S Mack, J Schube, T Fellmeth, F Feldmann, M Lenes, JM Luchies
physica status solidi (RRL)–Rapid Research Letters 11 (12), 1700334, 2017
862017
Doped layer optimization for silicon heterojunctions by injection-level-dependent open-circuit voltage measurements
M Bivour, M Reusch, S Schröer, F Feldmann, J Temmler, H Steinkemper, ...
IEEE Journal of Photovoltaics 4 (2), 566-574, 2014
852014
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