A 0.8 THz SiGe HBT Operating at 4.3 K PS Chakraborty, AS Cardoso, BR Wier, AP Omprakash, JD Cressler, ... IEEE Electron Device Letters 35 (2), 151-153, 2014 | 88 | 2014 |
Operation of SiGe HBTs down to 70 mK H Ying, BR Wier, J Dark, NE Lourenco, L Ge, AP Omprakash, M Mourigal, ... IEEE Electron Device Letters 38 (1), 12-15, 2016 | 36 | 2016 |
Collector transport in SiGe HBTs operating at cryogenic temperatures H Ying, J Dark, AP Omprakash, BR Wier, L Ge, U Raghunathan, ... IEEE Transactions on Electron Devices 65 (9), 3697-3703, 2018 | 26 | 2018 |
Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology AS Cardoso, PS Chakraborty, N Karaulac, DM Fleischhauer, ... IEEE transactions on Nuclear Science 61 (6), 3210-3217, 2014 | 26 | 2014 |
Tunneling, current gain, and transconductance in silicon-germanium heterojunction bipolar transistors operating at millikelvin temperatures D Davidović, H Ying, J Dark, BR Wier, L Ge, NE Lourenco, AP Omprakash, ... Physical Review Applied 8 (2), 024015, 2017 | 23 | 2017 |
Comparison of single-event transients in SiGe HBTs on bulk and thick-film SOI A Ildefonso, GN Tzintzarov, D Nergui, AP Omprakash, PS Goley, ... IEEE Transactions on Nuclear Science 67 (1), 71-80, 2019 | 18 | 2019 |
Hot-carrier-damage-induced current gain enhancement (CGE) effects in SiGe HBTs US Raghunathan, RP Martinez, BR Wier, AP Omprakash, H Ying, ... IEEE Transactions on Electron Devices 65 (6), 2430-2438, 2018 | 13 | 2018 |
Single-event transients in SiGe HBTs induced by pulsed X-ray microbeam D Nergui, A Ildefonso, GN Tzintzarov, NE Lourenco, AP Omprakash, ... IEEE Transactions on Nuclear Science 67 (1), 91-98, 2019 | 12 | 2019 |
Physical differences in hot carrier degradation of oxide interfaces in complementary (np-n+ pnp) SiGe HBTs US Raghunathan, H Ying, BR Wier, AP Omprakash, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (1), 37-44, 2016 | 11 | 2016 |
An investigation of high-temperature (to 300° C) safe-operating-area in a high-voltage complementary SiGe on SOI technology AP Omprakash, H Dao, US Raghunathan, H Ying, PS Chakraborty, ... IEEE Transactions on Electron Devices 64 (9), 3748-3755, 2017 | 9 | 2017 |
On the cryogenic RF linearity of SiGe HBTs in a fourth-generation 90-nm SiGe BiCMOS technology AS Cardoso, AP Omprakash, PS Chakraborty, N Karaulac, ... IEEE Transactions on Electron Devices 62 (4), 1127-1135, 2015 | 9 | 2015 |
Investigation of fT-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs MAR Sarker, AP Omprakash, MK Cho, JD Cressler, I Song IEEE Microwave and Wireless Components Letters 30 (9), 873-875, 2020 | 6 | 2020 |
DC and RF variability of SiGe HBTs operating down to deep cryogenic temperatures H Ying, JW Teng, GN Tzintzarov, AP Omprakash, SG Rao, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 6 | 2019 |
A broadband logarithmic power detector using 130 nm SiGe BiCMOS technology Y Gong, S Lee, H Ying, AP Omprakash, E Gebara, H Gu, C Nicholls, ... 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 6 | 2019 |
Total ionizing dose effects on a high-voltage (> 30V) complementary SiGe on SOI technology AP Omprakash, ZE Fleetwood, US Raghunathan, A Ildefonso, ... IEEE Transactions on Nuclear Science 64 (1), 277-284, 2016 | 6 | 2016 |
On the potential of using SiGe HBTs on SOI to support emerging applications up to 300° C AP Omprakash, PS Chakraborty, H Ying, AS Cardoso, A Ildefonso, ... 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting-BCTM, 27-30, 2015 | 6 | 2015 |
The effects of temperature on the single-event transient response of a high-voltage (> 30 V) complementary SiGe-on-SOI technology AP Omprakash, A Ildefonso, ZE Fleetwood, GN Tzintzarov, AS Cardoso, ... IEEE Transactions on Nuclear Science 66 (1), 389-396, 2018 | 4 | 2018 |
Modeling of high-current damage in SiGe HBTs under pulsed stress US Raghunathan, B Wier, RP Martinez, ZE Fleetwood, A Omprakash, ... 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 17-20, 2016 | 4 | 2016 |
On the cryogenic performance of ultra-low-loss, wideband SPDT RF switches designed in a 180 nm SOI-CMOS technology AS Cardoso, PS Chakraborty, AP Omprakash, N Karaulac, P Saha, ... 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S …, 2014 | 4 | 2014 |
Using SiGe-on-SOI HBTs to Build 300° C Capable Analog Circuits AP Omprakash, A Ildefonso, G Tzintzarov, J Babcock, R Mukhopadhyay, ... 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and …, 2018 | 1 | 2018 |