| Radial modulation doping in core–shell nanowires DC Dillen, K Kim, ES Liu, E Tutuc Nature nanotechnology 9 (2), 116-120, 2014 | 94 | 2014 |
| Low refractive index Si nanopillars on Si substrate GR Lin, YC Chang, ES Liu, HC Kuo, HS Lin Applied physics letters 90 (18), 2007 | 81 | 2007 |
| Lateral spin injection in germanium nanowires ES Liu, J Nah, KM Varahramyan, E Tutuc Nano letters 10 (9), 3297-3301, 2010 | 76 | 2010 |
| Core–Shell Nanowire Tunneling Field-Effect Transistors J Nah, ES Liu, KM Varahramyan, E Tutuc IEEE transactions on electron devices 57 (8), 1883-1888, 2010 | 48 | 2010 |
| Core–Shell Nanowire Tunneling Field-Effect Transistors J Nah, ES Liu, KM Varahramyan, E Tutuc IEEE transactions on electron devices 57 (8), 1883-1888, 2010 | 48 | 2010 |
| Characterization of Si nanorods by spectroscopic ellipsometry with efficient theoretical modeling SH Hsu, ES Liu, YC Chang, JN Hilfiker, YD Kim, TJ Kim, CJ Lin, GR Lin physica status solidi (a) 205 (4), 876-879, 2008 | 41 | 2008 |
| Realization of dual-gated Ge–SixGe1− x core-shell nanowire field effect transistors with highly doped source and drain J Nah, ES Liu, D Shahrjerdi, KM Varahramyan, SK Banerjee, E Tutuc Applied Physics Letters 94 (6), 2009 | 35 | 2009 |
| Doping of Ge–SixGe1− x core-shell nanowires using low energy ion implantation J Nah, K Varahramyan, ES Liu, SK Banerjee, E Tutuc Applied Physics Letters 93 (20), 2008 | 28 | 2008 |
| Enhanced-performance germanium nanowire tunneling field-effect transistors using flash-assisted rapid thermal process J Nah, ES Liu, KM Varahramyan, D Dillen, S McCoy, J Chan, E Tutuc IEEE electron device letters 31 (12), 1359-1361, 2010 | 27 | 2010 |
| Scaling Properties of–Core–Shell Nanowire Field-Effect Transistors J Nah, ES Liu, KM Varahramyan, D Shahrjerdi, SK Banerjee, E Tutuc IEEE transactions on electron devices 57 (2), 491-495, 2009 | 21 | 2009 |
| Role of metal–semiconductor contact in nanowire field-effect transistors ES Liu, N Jain, KM Varahramyan, J Nah, SK Banerjee, E Tutuc IEEE Transactions on Nanotechnology 9 (2), 237-242, 2009 | 21 | 2009 |
| Negative Differential Resistance in Buried-Channel pMOSFETs ES Liu, DQ Kelly, JP Donnelly, E Tutuc, SK Banerjee IEEE electron device letters 30 (2), 136-138, 2009 | 7 | 2009 |
| Realization and Scaling of Core-Shell Nanowire -FETs ES Liu, DC Dillen, J Nah, B Fallahazad, K Kim, E Tutuc IEEE transactions on electron devices 60 (12), 4027-4033, 2013 | 5 | 2013 |
| Effects of Si-cap thickness and temperature on device performance of Si/Ge1− xCx/Si p-MOSFETs M Jamil, ES Liu, F Ferdousi, JP Donnelly, E Tutuc, SK Banerjee Semiconductor science and technology 25 (4), 045005, 2010 | 4 | 2010 |
| LETTERS Silicon and Column IV Semiconductor Devices Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process J Nah, ES Liu, KM Varahramyan, D Dillen, S McCoy, J Chan, E Tutuc IEEE Electron Device Letters 31 (12), 1359, 2010 | 4 | 2010 |
| Interface States in Bilayer Graphene Encapsulated by Hexagonal Boron Nitride K Lee, ES Liu, K Watanabe, T Taniguchi, J Nah ACS applied materials & interfaces 10 (48), 40985-40989, 2018 | 2 | 2018 |
| Electronic and spintronic transport in germanium nanostructures ES Liu | | 2014 |
| Lateral Spin Injection in Germanium Nanowires (vol 10, pg 3297, 2010) ES Liu, J Nah, KM Varahramyan, E Tutuc NANO LETTERS 11 (9), 4027-4027, 2011 | | 2011 |
| Semiconductor Nanowires: Contacts and Electronic Properties E Tutuc, ES Liu Nanotechnology for Photovoltaics, 271-296, 2010 | | 2010 |
| Scaling Properties of – Core–Shell Nanowire Field-Effect Transistors J Nah, ES Liu, KM Varahramyan, D Shahrjerdi, SK Banerjee, E Tutuc IEEE Transactions on Electron Devices 2 (57), 491-495, 2010 | | 2010 |
Emanuel TutucProfessor, The University of Texas at AustinVerified email at mer.utexas.edu
