Neil Moser
Neil Moser
Air Force Research Laboratory
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Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
KD Chabak, N Moser, AJ Green, DE Walker Jr, SE Tetlak, E Heller, ...
Applied Physics Letters 109 (21), 213501, 2016
-Ga2O3 MOSFETs for Radio Frequency Operation
AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ...
IEEE Electron Device Letters 38 (6), 790-793, 2017
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 062101, 2018
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ...
IEEE Electron device letters 39 (1), 67-70, 2017
Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ...
Applied Physics Letters 111 (1), 012103, 2017
Comparison of gate and drain current detection of hydrogen at room temperature with high electron mobility transistors
HT Wang, BS Kang, F Ren, RC Fitch, JK Gillespie, N Moser, G Jessen, ...
Applied Physics Letters 87 (17), 172105, 2005
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ...
Applied Physics Letters 110 (14), 143505, 2017
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
Improved oxide passivation of high electron mobility transistors
BP Gila, M Hlad, AH Onstine, R Frazier, GT Thaler, A Herrero, E Lambers, ...
Applied Physics Letters 87 (16), 163503, 2005
Hydrogen-induced reversible changes in drain current in high electron mobility transistors
BS Kang, R Mehandru, S Kim, F Ren, RC Fitch, JK Gillespie, N Moser, ...
Applied physics letters 84 (23), 4635-4637, 2004
Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer
SJ Doo, P Roblin, GH Jessen, RC Fitch, JK Gillespie, NA Moser, A Crespo, ...
IEEE Microwave and wireless components letters 16 (12), 681-683, 2006
High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
GH Jessen, RC Fitch, JK Gillespie, GD Via, NA Moser, MJ Yannuzzi, ...
IEEE Electron Device Letters 24 (11), 677-679, 2003
Sub-micron gallium oxide radio frequency field-effect transistors
KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ...
2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018
Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors
RC Fitch, JK Gillespie, N Moser, T Jenkins, J Sewell, D Via, A Crespo, ...
Applied physics letters 84 (9), 1495-1497, 2004
Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors
NA Moser, JK Gillespie, GD Via, A Crespo, MJ Yannuzzi, GH Jessen, ...
Applied physics letters 83 (20), 4178-4180, 2003
RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band
AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ...
IEEE Electron Device Letters 41 (8), 1181-1184, 2020
Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ...
Applied Physics Express 12 (12), 126501, 2019
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band
NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
Toward realization of Ga2O3for power electronics applications
G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
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