Debdeep Jena
Cited by
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High-mobility and low-power thin-film transistors based on multilayer MoS 2 crystals
S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ...
Nature communications 3 (1), 1-7, 2012
High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared
W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ...
Advanced materials 24 (43), 5832-5836, 2012
Broadband graphene terahertz modulators enabled by intraband transitions
B Sensale-Rodriguez, R Yan, MM Kelly, T Fang, K Tahy, WS Hwang, ...
Nature communications 3 (1), 1-7, 2012
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
W Liu, J Kang, D Sarkar, Y Khatami, D Jena, K Banerjee
Nano letters 13 (5), 1983-1990, 2013
Two-dimensional semiconductors for transistors
M Chhowalla, D Jena, H Zhang
Nature Reviews Materials 1 (11), 1-15, 2016
Carrier statistics and quantum capacitance of graphene sheets and ribbons
T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 092109, 2007
Exciton Dynamics in Suspended Monolayer and Few-Layer MoS2 2D Crystals
H Shi, R Yan, S Bertolazzi, J Brivio, B Gao, A Kis, D Jena, HG Xing, ...
ACS nano 7 (2), 1072-1080, 2013
Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors
J Kang, W Liu, D Sarkar, D Jena, K Banerjee
Physical Review X 4 (3), 031005, 2014
Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures
J Simon, V Protasenko, C Lian, H Xing, D Jena
Science 327 (5961), 60-64, 2010
Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
ACS nano 7 (6), 5446-5452, 2013
Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering
D Jena, A Konar
Physical review letters 98 (13), 136805, 2007
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts andof 370 GHz
Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
Charge scattering and mobility in atomically thin semiconductors
N Ma, D Jena
Physical Review X 4 (1), 011043, 2014
Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors
A Konar, T Fang, D Jena
Physical Review B 82 (11), 115452, 2010
High-mobility window for two-dimensional electron gases at ultrathin heterojunctions
Y Cao, D Jena
Applied physics letters 90 (18), 182112, 2007
Dislocation scattering in a two-dimensional electron gas
D Jena, A Gossard, U Mishra
Applied Physics Letters 76, 1707-1709, 2000
Dislocation scattering in a two-dimensional electron gas
D Jena, A Gossard, U Mishra
Applied Physics Letters 76, 1707, 2000
Dislocation scattering in a two-dimensional electron gas
UKM D. Jena, A. C. Gossard
Applied Physics Letters 76, 1707, 2000
Polarization effects in semiconductors: from ab initio theory to device applications
C Wood, D Jena
Springer Science & Business Media, 2007
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