Jacopo Franco
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The paradigm shift in understanding the bias temperature instability: From reaction–diffusion to switching oxide traps
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
IEEE Transactions on Electron Devices 58 (11), 3652-3666, 2011
4032011
Origin of NBTI variability in deeply scaled pFETs
B Kaczer, T Grasser, PJ Roussel, J Franco, R Degraeve, LA Ragnarsson, ...
2010 IEEE International Reliability Physics Symposium, 26-32, 2010
3002010
Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise
T Grasser, H Reisinger, W Goes, T Aichinger, P Hehenberger, PJ Wagner, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1192009
Recent advances in understanding the bias temperature instability
T Grasser, B Kaczer, W Goes, H Reisinger, T Aichinger, P Hehenberger, ...
2010 international electron devices meeting, 4.4. 1-4.4. 4, 2010
1122010
From mean values to distributions of BTI lifetime of deeply scaled FETs through atomistic understanding of the degradation
M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, T Grasser, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 152-153, 2011
1112011
Impact of single charged gate oxide defects on the performance and scaling of nanoscaled FETs
J Franco, B Kaczer, M Toledano-Luque, PJ Roussel, J Mitard, ...
Reliability Physics Symposium (IRPS), 2012 IEEE International, 5A. 4.1-5A. 4.6, 2012
952012
The ‘permanent’component of NBTI: Composition and annealing
T Grasser, T Aichinger, G Pobegen, H Reisinger, PJ Wagner, J Franco, ...
2011 International Reliability Physics Symposium, 6A. 2.1-6A. 2.9, 2011
832011
Insight into N/PBTI mechanisms in sub-1-nm-EOT devices
M Cho, JD Lee, M Aoulaiche, B Kaczer, P Roussel, T Kauerauf, ...
IEEE Transactions on Electron Devices 59 (8), 2042-2048, 2012
792012
A unified perspective of RTN and BTI
T Grasser, K Rott, H Reisinger, M Waltl, J Franco, B Kaczer
2014 IEEE International Reliability Physics Symposium, 4A. 5.1-4A. 5.7, 2014
782014
Response of a single trap to AC negative bias temperature stress
M Toledano-Luque, B Kaczer, PJ Roussel, T Grasser, GI Wirth, J Franco, ...
2011 International Reliability Physics Symposium, 4A. 2.1-4A. 2.8, 2011
742011
SiGe channel technology: Superior reliability toward ultrathin EOT devices—Part I: NBTI
J Franco, B Kaczer, PJ Roussel, J Mitard, M Cho, L Witters, T Grasser, ...
IEEE transactions on electron devices 60 (1), 396-404, 2012
732012
Channel Hot Carrier Degradation Mechanism in Long/Short Channel -FinFETs
M Cho, P Roussel, B Kaczer, R Degraeve, J Franco, M Aoulaiche, ...
IEEE transactions on electron devices 60 (12), 4002-4007, 2013
712013
Predictive hot-carrier modeling of n-channel MOSFETs
M Bina, S Tyaginov, J Franco, K Rupp, Y Wimmer, D Osintsev, B Kaczer, ...
IEEE Transactions on Electron Devices 61 (9), 3103-3110, 2014
652014
Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
J Franco, A Alian, B Kaczer, D Lin, T Ivanov, A Pourghaderi, K Martens, ...
2014 IEEE International Reliability Physics Symposium, 6A. 2.1-6A. 2.6, 2014
582014
Degradation of time dependent variability due to interface state generation
M Toledano-Luque, B Kaczer, J Franco, PJ Roussel, M Bina, T Grasser, ...
VLSI Technology (VLSIT), 2013 Symposium on, T190-T191, 2013
562013
Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility …
J Franco, B Kaczer, PJ Roussel, J Mitard, S Sioncke, L Witters, H Mertens, ...
2013 IEEE International Electron Devices Meeting, 15.2. 1-15.2. 4, 2013
512013
Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow
N Waldron, S Sioncke, J Franco, L Nyns, A Vais, X Zhou, HC Lin, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2015
482015
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs
S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
482015
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
472018
RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs
J Franco, B Kaczer, N Waldron, PJ Roussel, A Alian, MA Pourghaderi, Z Ji, ...
2014 IEEE International Electron Devices Meeting, 20.2. 1-20.2. 4, 2014
432014
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