| Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon PA Stolk, HJ Gossmann, DJ Eaglesham, DC Jacobson, CS Rafferty, ... Journal of Applied Physics 81 (9), 6031-6050, 1997 | 898 | 1997 |
| Size effects in the structural phase transition of VO2 nanoparticles R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr Physical Review B 65 (22), 224113, 2002 | 436 | 2002 |
| Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ A Agarwal, TE Haynes, VC Venezia, OW Holland, DJ Eaglesham Applied Physics Letters 72 (9), 1086-1088, 1998 | 406 | 1998 |
| Mechanism of silicon exfoliation induced by hydrogen/helium co-implantation MK Weldon, M Collot, YJ Chabal, VC Venezia, A Agarwal, TE Haynes, ... Applied Physics Letters 73 (25), 3721-3723, 1998 | 339 | 1998 |
| Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance M Rini, A Cavalleri, RW Schoenlein, R López, LC Feldman, RF Haglund, ... Optics letters 30 (5), 558-560, 2005 | 251 | 2005 |
| Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix R Lopez, LA Boatner, TE Haynes, LC Feldman, RF Haglund Jr Journal of applied physics 92 (7), 4031-4036, 2002 | 209 | 2002 |
| Study of the effect of ion implantation on the electrical and microstructural properties of tin‐doped indium oxide thin films Y Shigesato, DC Paine, TE Haynes Journal of applied physics 73 (8), 3805-3811, 1993 | 159 | 1993 |
| A study of the Au/Ni ohmic contact on D Qiao, LS Yu, SS Lau, JY Lin, HX Jiang, TE Haynes Journal of Applied Physics 88 (7), 4196-4200, 2000 | 132 | 2000 |
| Temperature-controlled surface plasmon resonance in VO2 nanorods R Lopez, TE Haynes, LA Boatner, LC Feldman, RF Haglund Jr Optics letters 27 (15), 1327-1329, 2002 | 127 | 2002 |
| Enhanced hysteresis in the semiconductor-to-metal phase transition of precipitates formed in by ion implantation R Lopez, LA Boatner, TE Haynes, RF Haglund Jr, LC Feldman Applied Physics Letters 79 (19), 3161-3163, 2001 | 127 | 2001 |
| Implant damage and transient enhanced diffusion in Si DJ Eaglesham, PA Stolk, HJ Gossmann, TE Haynes, JM Poate Ion Beam Modification of Materials 106, 191-197, 1996 | 117 | 1996 |
| Interactions of ion‐implantation‐induced interstitials with boron at high concentrations in silicon TE Haynes, DJ Eaglesham, PA Stolk, HJ Gossmann, DC Jacobson, ... Applied physics letters 69 (10), 1376-1378, 1996 | 115 | 1996 |
| Reduction of transient diffusion from 1–5 keV ion implantation due to surface annihilation of interstitials A Agarwal, HJ Gossmann, DJ Eaglesham, L Pelaz, DC Jacobson, ... Applied physics letters 71 (21), 3141-3143, 1997 | 113 | 1997 |
| Electrical properties of heteroepitaxial grown tin‐doped indium oxide films N Taga, H Odaka, Y Shigesato, I Yasui, M Kamei, TE Haynes Journal of applied physics 80 (2), 978-984, 1996 | 109 | 1996 |
| The interstitial fraction of diffusivity of common dopants in Si HJ Gossmann, TE Haynes, PA Stolk, DC Jacobson, GH Gilmer, JM Poate, ... Applied physics letters 71 (26), 3862-3864, 1997 | 106 | 1997 |
| Boron-enhanced diffusion of boron from ultralow-energy ion implantation A Agarwal, HJ Gossmann, DJ Eaglesham, SB Herner, AT Fiory, ... Applied Physics Letters 74 (17), 2435-2437, 1999 | 104 | 1999 |
| Comparative study of implantation‐induced damage in GaAs and Ge: Temperature and flux dependence TE Haynes, OW Holland Applied physics letters 59 (4), 452-454, 1991 | 104 | 1991 |
| Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon VC Venezia, TE Haynes, A Agarwal, L Pelaz, HJ Gossmann, ... Applied physics letters 74 (9), 1299-1301, 1999 | 96 | 1999 |
| Depth profiling of vacancy clusters in MeV-implanted Si using Au labeling VC Venezia, DJ Eaglesham, TE Haynes, A Agarwal, DC Jacobson, ... Applied physics letters 73 (20), 2980-2982, 1998 | 92 | 1998 |
| Iron gettering mechanisms in silicon JL Benton, PA Stolk, DJ Eaglesham, DC Jacobson, JY Cheng, JM Poate, ... Journal of applied physics 80 (6), 3275-3284, 1996 | 85 | 1996 |
