Hareesh Chandrasekar
Hareesh Chandrasekar
Agnit Semiconductors Private Limited
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Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ...
Applied Physics Letters 115 (25), 2019
“Kink” in AlGaN/GaN-HEMTs: floating buffer model
M Singh, MJ Uren, T Martin, S Karboyan, H Chandrasekar, M Kuball
IEEE Transactions on Electron Devices 65 (9), 3746-3753, 2018
Thickness dependent parasitic channel formation at AlN/Si interfaces
H Chandrasekar, KN Bhat, M Rangarajan, S Raghavan, N Bhat
Scientific reports 7 (1), 15749, 2017
Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates
H Chandrasekar, MJ Uren, A Eblabla, H Hirshy, MA Casbon, PJ Tasker, ...
IEEE Electron Device Letters 39 (10), 1556-1559, 2018
An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si
H Chandrasekar, N Mohan, A Bardhan, KN Bhat, N Bhat, N Ravishankar, ...
Applied Physics Letters 103 (21), 2013
Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology
H Chandrasekar, MJ Uren, MA Casbon, H Hirshy, A Eblabla, K Elgaid, ...
IEEE Transactions on Electron Devices 66 (4), 1681-1687, 2019
Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs
S Bhattacharjee, KL Ganapathi, H Chandrasekar, T Paul, S Mohan, ...
Advanced Electronic Materials 3 (1), 1600358, 2017
BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ...
Applied Physics Letters 116 (2), 2020
Substrate Effects in GaN-on-Silicon RF Device Technology
H Chandrasekar
Wide Bandgap Semiconductor Electronics and Devices 63, 1-29, 2020
First observations on the trap-induced avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
B Shankar, A Soni, H Chandrasekar, S Raghavan, M Shrivastava
IEEE Transactions on Electron Devices 66 (8), 3433-3440, 2019
Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
H Chandrasekar, T Razzak, C Wang, Z Reyes, K Majumdar, S Rajan
Advanced Electronic Materials 6 (8), 2000074, 2020
Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ...
2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017
Growth stress induced tunability of dielectric permittivity in thin films
K Narayanachari, H Chandrasekar, A Banerjee, KBR Varma, R Ranjan, ...
Journal of Applied Physics 119 (1), 2016
Dielectric Engineering of HfO2Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
H Chandrasekar, S Kumar, KL Ganapathi, S Prabhu, SB Dolmanan, ...
IEEE Transactions on Electron Devices 65 (9), 3711-3718, 2018
The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth
A Bardhan, N Mohan, H Chandrasekar, P Ghosh, DV Sridhara Rao, ...
Journal of Applied Physics 123 (16), 2018
Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
N Remesh, H Chandrasekar, A Venugopalrao, S Raghavan, ...
Journal of Applied Physics 130 (7), 2021
Nanoscale etching of perovskite oxides for field effect transistor applications
J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ...
Journal of Vacuum Science & Technology B 38 (1), 2020
Estimation of background carrier concentration in fully depleted GaN films
H Chandrasekar, M Singh, S Raghavan, N Bhat
Semiconductor Science and Technology 30 (11), 115018, 2015
Low voltage drop tunnel junctions grown monolithically by MOCVD
Z Jamal-Eddine, S Hasan, B Gunning, H Chandrasekar, M Crawford, ...
Applied Physics Letters 118 (5), 2021
Velocity saturation in La-doped BaSnO3 thin films
H Chandrasekar, J Cheng, T Wang, Z Xia, NG Combs, CR Freeze, ...
Applied Physics Letters 115 (9), 2019
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