| Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field Z Xia, H Chandrasekar, W Moore, C Wang, AJ Lee, J McGlone, ... Applied Physics Letters 115 (25), 2019 | 112 | 2019 |
| “Kink” in AlGaN/GaN-HEMTs: floating buffer model M Singh, MJ Uren, T Martin, S Karboyan, H Chandrasekar, M Kuball IEEE Transactions on Electron Devices 65 (9), 3746-3753, 2018 | 48 | 2018 |
| Thickness dependent parasitic channel formation at AlN/Si interfaces H Chandrasekar, KN Bhat, M Rangarajan, S Raghavan, N Bhat Scientific reports 7 (1), 15749, 2017 | 37 | 2017 |
| Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates H Chandrasekar, MJ Uren, A Eblabla, H Hirshy, MA Casbon, PJ Tasker, ... IEEE Electron Device Letters 39 (10), 1556-1559, 2018 | 32 | 2018 |
| An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si H Chandrasekar, N Mohan, A Bardhan, KN Bhat, N Bhat, N Ravishankar, ... Applied Physics Letters 103 (21), 2013 | 30 | 2013 |
| Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology H Chandrasekar, MJ Uren, MA Casbon, H Hirshy, A Eblabla, K Elgaid, ... IEEE Transactions on Electron Devices 66 (4), 1681-1687, 2019 | 29 | 2019 |
| Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs S Bhattacharjee, KL Ganapathi, H Chandrasekar, T Paul, S Mohan, ... Advanced Electronic Materials 3 (1), 1600358, 2017 | 25 | 2017 |
| BaTiO3/Al0. 58Ga0. 42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ... Applied Physics Letters 116 (2), 2020 | 23 | 2020 |
| Substrate Effects in GaN-on-Silicon RF Device Technology H Chandrasekar Wide Bandgap Semiconductor Electronics and Devices 63, 1-29, 2020 | 22 | 2020 |
| First observations on the trap-induced avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs B Shankar, A Soni, H Chandrasekar, S Raghavan, M Shrivastava IEEE Transactions on Electron Devices 66 (8), 3433-3440, 2019 | 19 | 2019 |
| Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates H Chandrasekar, T Razzak, C Wang, Z Reyes, K Majumdar, S Rajan Advanced Electronic Materials 6 (8), 2000074, 2020 | 16 | 2020 |
| Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ... 2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017 | 16 | 2017 |
| Growth stress induced tunability of dielectric permittivity in thin films K Narayanachari, H Chandrasekar, A Banerjee, KBR Varma, R Ranjan, ... Journal of Applied Physics 119 (1), 2016 | 16 | 2016 |
| Dielectric Engineering of HfO2Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates H Chandrasekar, S Kumar, KL Ganapathi, S Prabhu, SB Dolmanan, ... IEEE Transactions on Electron Devices 65 (9), 3711-3718, 2018 | 13* | 2018 |
| The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth A Bardhan, N Mohan, H Chandrasekar, P Ghosh, DV Sridhara Rao, ... Journal of Applied Physics 123 (16), 2018 | 13 | 2018 |
| Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications N Remesh, H Chandrasekar, A Venugopalrao, S Raghavan, ... Journal of Applied Physics 130 (7), 2021 | 12 | 2021 |
| Nanoscale etching of perovskite oxides for field effect transistor applications J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ... Journal of Vacuum Science & Technology B 38 (1), 2020 | 12 | 2020 |
| Estimation of background carrier concentration in fully depleted GaN films H Chandrasekar, M Singh, S Raghavan, N Bhat Semiconductor Science and Technology 30 (11), 115018, 2015 | 12 | 2015 |
| Low voltage drop tunnel junctions grown monolithically by MOCVD Z Jamal-Eddine, S Hasan, B Gunning, H Chandrasekar, M Crawford, ... Applied Physics Letters 118 (5), 2021 | 11 | 2021 |
| Velocity saturation in La-doped BaSnO3 thin films H Chandrasekar, J Cheng, T Wang, Z Xia, NG Combs, CR Freeze, ... Applied Physics Letters 115 (9), 2019 | 11 | 2019 |
Siddharth RajanElectrical and Computer Engineering, Ohio State UniversityVerified email at ece.osu.edu
