Thaddeus J. Asel
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Cited by
Direct observation of a two-dimensional hole gas at oxide interfaces
H Lee, N Campbell, J Lee, TJ Asel, TR Paudel, H Zhou, JW Lee, ...
Nature materials 17 (3), 231-236, 2018
Optical signatures of deep level defects in Ga2O3
H Gao, S Muralidharan, N Pronin, MR Karim, SM White, T Asel, G Foster, ...
Applied Physics Letters 112 (24), 242102, 2018
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
Tailoring the electronic structure of covalently functionalized germanane via the interplay of ligand strain and electronegativity
S Jiang, K Krymowski, T Asel, MQ Arguilla, ND Cultrara, E Yanchenko, ...
Chemistry of Materials 28 (21), 8071-8077, 2016
Native point defect formation in flash sintered ZnO studied by depth-resolved cathodoluminescence spectroscopy
H Gao, TJ Asel, JW Cox, Y Zhang, J Luo, LJ Brillson
Journal of Applied Physics 120 (10), 105302, 2016
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band
NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy
TJ Asel, E Steinbrunner, J Hendricks, AT Neal, S Mou
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (4 …, 2020
Identification of a functional point defect in
D Lee, H Wang, BA Noesges, TJ Asel, J Pan, JW Lee, Q Yan, LJ Brillson, ...
Physical Review Materials 2 (6), 060403, 2018
Toward high voltage radio frequency devices in β-Ga2O3
N Moser, K Liddy, A Islam, N Miller, K Leedy, T Asel, S Mou, A Green, ...
Applied Physics Letters 117 (24), 242101, 2020
Near-nanoscale-resolved energy band structure of LaNiO3/La2/3Sr1/3MnO3/SrTiO3 heterostructures and their interfaces
TJ Asel, H Gao, TJ Heinl, D Adkins, PM Woodward, J Hoffman, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015
Uniform large-area growth of nanotemplated high-quality monolayer MoS2
JR Young, M Chilcote, M Barone, J Xu, J Katoch, YK Luo, S Mueller, ...
Applied Physics Letters 110 (26), 263103, 2017
γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films
CS Chang, N Tanen, V Protasenko, TJ Asel, S Mou, HG Xing, D Jena, ...
APL Materials 9 (5), 051119, 2021
Influence of surface chemistry on water absorption in functionalized germanane
TJ Asel, WLB Huey, B Noesges, E Molotokaite, SC Chien, Y Wang, ...
Chemistry of Materials 32 (4), 1537-1544, 2020
Identification of Ge vacancies as electronic defects in methyl-and hydrogen-terminated germanane
TJ Asel, E Yanchenko, X Yang, S Jiang, K Krymowski, Y Wang, A Trout, ...
Applied Physics Letters 113 (6), 061110, 2018
Direct correlation and strong reduction of native point defects and microwave dielectric loss in air-annealed (Ba,Sr)TiO3
ZQ Zeng, A Podpirka, SW Kirchoefer, TJ Asel, LJ Brillson
Applied Physics Letters 106 (18), 182903, 2015
Controlled Si doping of β-Ga2O3 by molecular beam epitaxy
JP McCandless, V Protasenko, BW Morell, E Steinbrunner, AT Neal, ...
Applied Physics Letters 121 (7), 072108, 2022
Topological Dirac semimetal Na3Bi films in the ultrathin limit via alternating layer molecular beam epitaxy
IV Pinchuk, TJ Asel, A Franson, T Zhu, YM Lu, LJ Brillson, ...
APL Materials 6 (8), 086103, 2018
Impact of Be-doping on the material properties of InAs/InAsSb type-II superlattices for infrared detection
EH Steenbergen, S Elhamri, TJ Asel, WC Mitchel, ST Hierath, GJ Brown
Quantum Sensing and Nanophotonic Devices XI 8993, 151-157, 2014
Influence of nitride buffer layers on superconducting properties of niobium nitride
JH Goldsmith, R Gibson, T Cooper, TJ Asel, S Mou, DC Look, JS Derov, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36 (6 …, 2018
Surface relaxation and rumpling of Sn-doped
A Pancotti, TC Back, W Hamouda, M Lachheb, C Lubin, P Soukiassian, ...
Physical Review B 102 (24), 245306, 2020
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