Mim Nakarmi
Mim Nakarmi
Professor of Physics, Brooklyn College-CUNY
Verified email at brooklyn.cuny.edu - Homepage
Title
Cited by
Cited by
Year
Band structure and fundamental optical transitions in wurtzite AlN
J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei
Applied Physics Letters 83 (25), 5163-5165, 2003
3662003
Unique optical properties of alloys and related ultraviolet emitters
KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 84 (25), 5264-5266, 2004
3292004
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence
KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang
Applied physics letters 83 (5), 878-880, 2003
2232003
Optical and electrical properties of Mg-doped p-type
J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 80 (7), 1210-1212, 2002
1822002
deep ultraviolet photodetectors based on AlN
J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 89 (21), 213510, 2006
1672006
Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
KB Nam, ML Nakarmi, JY Lin, HX Jiang
Applied Physics Letters 86 (22), 222108, 2005
1582005
Temperature and compositional dependence of the energy band gap of AlGaN alloys
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied Physics Letters 87 (24), 242104, 2005
1552005
Transport properties of highly conductive -type Al-rich
ML Nakarmi, KH Kim, K Zhu, JY Lin, HX Jiang
Applied physics letters 85 (17), 3769-3771, 2004
1302004
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping
ML Nakarmi, KH Kim, J Li, JY Lin, HX Jiang
Applied physics letters 82 (18), 3041-3043, 2003
1292003
Electrical and optical properties of Mg-doped alloys
ML Nakarmi, KH Kim, M Khizar, ZY Fan, JY Lin, HX Jiang
Applied Physics Letters 86 (9), 092108, 2005
1282005
Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers
KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 82 (11), 1694-1696, 2003
1282003
Band-edge photoluminescence of AlN epilayers
J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang
Applied Physics Letters 81 (18), 3365-3367, 2002
1272002
Correlation between optoelectronic and structural properties and epilayer thickness of AlN
BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ...
Applied Physics Letters 90 (24), 241101, 2007
1212007
Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys
ML Nakarmi, N Nepal, JY Lin, HX Jiang
Applied Physics Letters 94 (9), 091903, 2009
1192009
Photoluminescence studies of impurity transitions in AlGaN alloys
N Nepal, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 89 (9), 092107, 2006
1192006
Correlation between optical and electrical properties of Mg-doped AlN epilayers
ML Nakarmi, N Nepal, C Ugolini, TM Altahtamouni, JY Lin, HX Jiang
Applied physics letters 89 (15), 152120, 2006
1172006
AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers
KH Kim, ZY Fan, M Khizar, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 85 (20), 4777-4779, 2004
1092004
Band-edge exciton states in AlN single crystals and epitaxial layers
L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ...
Applied physics letters 85 (19), 4334-4336, 2004
922004
Achieving highly conductive AlGaN alloys with high Al contents
KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied Physics Letters 81 (6), 1038-1040, 2002
902002
Exciton localization in AlGaN alloys
N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang
Applied physics letters 88 (6), 062103, 2006
842006
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Articles 1–20