T. M. Al tahtamouni
T. M. Al tahtamouni
Professor of Physics and Materials Science at Qatar University
Verified email at qu.edu.qa
Title
Cited by
Cited by
Year
Correlation between optical and electrical properties of Mg-doped AlN epilayers
HXJ M. L. Nakarmi, N. Nepal, C. Ugolini, T. M. Al Tahtamouni, J. Y. Lin
Appl. Phys. Lett. 89, 152120, 2006
1172006
Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors
R Dahal, TM Al Tahtamouni, ZY Fan, JY Lin, HX Jiang
Applied physics letters 90 (26), 263505, 2007
512007
Correlation between biaxial stress and free exciton transition in AlN epilayers
BN Pantha, N Nepal, TM Al Tahtamouni, ML Nakarmi, J Li, JY Lin, ...
Applied Physics Letters 91 (12), 121117, 2007
482007
Graphene a promising electrode material for supercapacitors—a review
AS Lemine, MM Zagho, TM Altahtamouni, N Bensalah
International Journal of Energy Research 42 (14), 4284-4300, 2018
412018
Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells
TM Al Tahtamouni, JY Lin, HX Jiang
Applied Physics Letters 101 (4), 042103, 2012
372012
AlN avalanche photodetectors
R Dahal, TM Al Tahtamouni, JY Lin, HX Jiang
Applied Physics Letters 91 (24), 243503, 2007
372007
Growth and photoluminescence studies of Al-rich quantum wells
TM Al Tahtamouni, N Nepal, JY Lin, HX Jiang, WW Chow
Applied physics letters 89 (13), 131922, 2006
372006
TM Al tahtamouni, JY Lin, HX Jiang, Z. Gu, and JH Edgar
A Sedhain, N Nepal, ML Nakarmi
Appl. Phys. Lett 93, 041905, 2008
342008
Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant
TM Al Tahtamouni, A Sedhain, JY Lin, HX Jiang
Applied Physics Letters 92 (9), 092105, 2008
312008
Growth and photoluminescence studies of -plane quantum wells
TM Al Tahtamouni, A Sedhain, JY Lin, HX Jiang
Applied physics letters 90 (22), 221105, 2007
232007
Beryllium acceptor binding energy in AlN
A Sedhain, TM Al Tahtamouni, J Li, JY Lin, HX Jiang
Applied Physics Letters 93 (14), 141104, 2008
212008
The advanced photocatalytic degradation of atrazine by direct Z-scheme Cu doped ZnO/g-C3N4
NTT Truc, DS Duc, D Van Thuan, T Al Tahtamouni, TD Pham, NT Hanh, ...
Applied Surface Science 489, 875-882, 2019
192019
Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates
J Li, JY Lin, HX Jiang
Journal of Physics D: Applied Physics 45 (28), 285103, 2012
192012
Influence of TMAl preflow on AlN epitaxy on sapphire
H Sun, F Wu, YJ Park, TM Al Tahtamouni, KH Li, N Alfaraj, T Detchprohm, ...
Applied Physics Letters 110 (19), 192106, 2017
172017
Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes
TM Al Tahtamouni, JY Lin, HX Jiang
Aip Advances 4 (4), 047122, 2014
172014
A brief overview of flexible CNT/PANI super capacitors
HD Dawouda, TM Altahtamounia
Mater Sci Nanotechnol. 2017; 1 (2): 23-36. 24 Mater Sci Nanotechnol 2017 …, 2017
132017
Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes
TM Al Tahtamouni, JY Lin, HX Jiang
Journal of Applied Physics 113 (12), 123501, 2013
132013
AlN MSM and Schottky photodetectors
R Dahal, J Li, ZY Fan, ML Nakarmi, TMA Tahtamouni, JY Lin, HX Jiang
physica status solidi c 5 (6), 2148-2151, 2008
132008
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region
VX Ho, TM Al Tahtamouni, HX Jiang, JY Lin, JM Zavada, NQ Vinh
ACS Photonics 5 (4), 1303-1309, 2018
102018
High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors
TM Al Tahtamouni, JY Lin, HX Jiang
Applied Physics Letters 101 (19), 192106, 2012
102012
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