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Kate M Kelchner, PhD
Kate M Kelchner, PhD
Meta Reality Labs
Verified email at ece.ucsb.edu
Title
Cited by
Cited by
Year
Plasma enhanced atomic layer deposition with pulsed plasma exposure
JS Sims, J Henri, KM Kelchner, SBSV Janjam, S Tang
US Patent 9,076,646, 2015
5142015
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
4772013
Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
JS Sims, KM Kelchner, J Henri, DM Hausmann
US Patent 9,214,333, 2015
4152015
Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JS Sims, KM Kelchner
US Patent 9,865,455, 2018
3272018
High-brightness polarized light-emitting diodes
E Matioli, S Brinkley, KM Kelchner, YL Hu, S Nakamura, S DenBaars, ...
Light: Science & Applications 1 (8), e22-e22, 2012
3072012
Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than+/-15 degrees in the C-direction
PS Hsu, KM Kelchner, RM Farrell, DA Haeger, H Ohta, A Tyagi, ...
US Patent 9,077,151, 2015
2652015
Superluminescent diodes by crystallographic etching
MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ...
US Patent App. 12/913,638, 2011
2532011
Method for depositing metals free ald silicon nitride films using halide-based precursors
JS Sims, J Henri, R Chandrasekharan, AJ McKerrow, S Varadarajan, ...
US Patent 9,824,884, 2017
2492017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
1212010
Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes
RM Farrell, DF Feezell, MC Schmidt, DA Haeger, KM Kelchner, K Iso, ...
Japanese Journal of Applied Physics 46 (8L), L761, 2007
1042007
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate
YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ...
Applied physics express 2 (8), 082102, 2009
792009
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding
KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ...
Applied Physics Express 2 (7), 071003, 2009
602009
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
S Marcinkevicius, KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, ...
Applied Physics Letters 103 (11), 111107-111107-5, 2013
582013
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates
A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ...
Applied Physics Letters 103 (15), 2013
532013
m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching
MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ...
Applied Physics Express 2 (12), 121004, 2009
492009
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
E Matioli, S Brinkley, KM Kelchner, S Nakamura, S DenBaars, J Speck, ...
Applied Physics Letters 98 (25), 2011
462011
Semipolar iii-nitride laser diodes with etched mirrors
A Tyagi, RM Farrell, CY Huang, PS Hsu, DA Haeger, KM Kelchner, ...
US Patent App. 12/908,478, 2011
432011
Optical properties of extended and localized states in m-plane InGaN quantum wells
S Marcinkevičius, KM Kelchner, S Nakamura, SP DenBaars, JS Speck
Applied Physics Letters 102 (10), 2013
422013
InGaN/GaN blue laser diode grown on semipolar (3031) free-standing GaN substrates
PS Hsu, KM Kelchner, A Tyagi, RM Farrell, DA Haeger, K Fujito, H Ohta, ...
Applied physics express 3 (5), 052702, 2010
412010
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
RM Farrell, DA Haeger, X Chen, M Iza, A Hirai, KM Kelchner, K Fujito, ...
Journal of crystal growth 313 (1), 1-7, 2010
402010
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