Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction H Yu, M Schaekers, T Schram, E Rosseel, K Martens, S Demuynck, ...
Electron Device Letters, IEEE 36 (6), 600-602, 2015
75 2015 1.5× 10− 9 Ωcm2 Contact resistivity on highly doped Si: P using Ge pre-amorphization and Ti silicidation H Yu, M Schaekers, E Rosseel, A Peter, JG Lee, WB Song, S Demuynck, ...
2015 IEEE International Electron Devices Meeting (IEDM), 21.7. 1-21.7. 4, 2015
70 2015 A simplified method for (circular) transmission line model simulation and ultralow contact resistivity extraction H Yu, M Schaekers, T Schram, N Collaert, K De Meyer, N Horiguchi, ...
IEEE Electron Device Letters 35 (9), 957-959, 2014
60 2014 Titanium Silicide on Si:P With Precontact Amorphization Implantation Treatment: Contact Resistivity Approaching H Yu, M Schaekers, A Peter, G Pourtois, E Rosseel, JG Lee, WB Song, ...
IEEE Transactions on Electron Devices 63 (12), 4632-4641, 2016
53 2016 Thermal Stability Concern of Metal-Insulator-Semiconductor Contact: A Case Study of Ti/TiO2 /n-Si Contact H Yu, M Schaekers, T Schram, S Demuynck, N Horiguchi, K Barla, ...
IEEE Transactions on Electron Devices 63 (7), 2671-2676, 2016
51 2016 Selective epitaxial growth of high-P Si: P for source/drain formation in advanced Si nFETs E Rosseel, SK Dhayalan, AY Hikavyy, R Loo, HB Profijt, D Kohen, ...
ECS Transactions 75 (8), 347, 2016
50 2016 Contact resistivities of metal-insulator-semiconductor contacts and metal-semiconductor contacts H Yu, M Schaekers, K Barla, N Horiguchi, N Collaert, AVY Thean, ...
Applied Physics Letters 108 (17), 2016
41 2016 Low-resistance titanium contacts and thermally unstable nickel germanide contacts on p-type germanium H Yu, M Schaekers, T Schram, W Aderhold, AJ Mayur, J Mitard, L Witters, ...
IEEE Electron Device Letters 37 (4), 482-485, 2016
37 2016 Sub-10−9 Ω·cm2 contact resistivity on p-SiGe achieved by Ga doping and nanosecond laser activation JL Everaert, M Schaekers, H Yu, LL Wang, A Hikavyy, L Date, ...
2017 Symposium on VLSI Technology, T214-T215, 2017
36 2017 TiSi(Ge) Contacts Formed at Low Temperature Achieving Around H Yu, M Schaekers, J Zhang, LL Wang, JL Everaert, N Horiguchi, ...
IEEE Transactions on Electron Devices 64 (2), 500-506, 2017
36 2017 Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-) silicidation H Yu, M Schaekers, A Hikavyy, E Rosseel, A Peter, K Hollar, FA Khaja, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
36 2016 Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation LL Wang, H Yu, M Schaekers, JL Everaert, A Franquet, B Douhard, L Date, ...
2017 IEEE International Electron Devices Meeting (IEDM), 22.4. 1-22.4. 4, 2017
31 2017 Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal SA Chew, H Yu, M Schaekers, S Demuynck, G Mannaert, E Kunnen, ...
2017 IEEE International Interconnect Technology Conference (IITC), 1-3, 2017
27 2017 Lanthanum and lanthanum silicide contacts on N-type silicon H Yu, LL Wang, M Schaekers, JL Everaert, YL Jiang, D Mocuta, ...
IEEE Electron Device Letters 38 (7), 843-846, 2017
25 2017 Polarization fatigue in ferroelectric vinylidene fluoride and trifluoroethylene copolymer thin films GD Zhu, Y Gu, H Yu, SS Fu, YL Jiang
Journal of Applied Physics 110 (2), 2011
24 2011 First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering A Vais, L Witters, Y Mols, AS Hernandez, A Walke, H Yu, M Baryshnikova, ...
2019 IEEE International Electron Devices Meeting (IEDM), 9.1. 1-9.1. 4, 2019
23 2019 Study of nickel silicide formation on Si (1 1 0) substrate X Guo, H Yu, YL Jiang, GP Ru, DW Zhang, BZ Li
Applied surface science 257 (24), 10571-10575, 2011
17 2011 MIS or MS? Source/drain contact scheme evaluation for 7nm Si CMOS technology and beyond H Yu, M Schaekers, S Demuynck, K Barla, A Mocuta, N Horiguchi, ...
2016 16th International Workshop on Junction Technology (IWJT), 19-24, 2016
15 2016 Study of the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations A Dabral, G Pourtois, K Sankaran, W Magnus, H Yu, AJ de Meux, AKA Lu, ...
ECS Journal of Solid State Science and Technology 7 (6), N73, 2018
14 2018 Heterostructure at CMOS source/drain: Contributor or alleviator to the high access resistance problem? H Yu, M Schaekers, E Rosseel, JL Everaert, P Eyben, T Chiarella, ...
2016 IEEE International Electron Devices Meeting (IEDM), 25.1. 1-25.1. 4, 2016
13 2016 
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