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Mohamed El Kordy Shehata
Mohamed El Kordy Shehata
Other namesMohamed Shehata, Mohamed Mohamed El Kordy Shehata, M.Mohamed El Kordy Shehata
IMEC, KU Leuven
Verified email at imec.be
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Cited by
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Year
A flexible 300 mm integrated Si MOS platform for electron-and hole-spin qubits exploration
R Li, NID Stuyck, S Kubicek, J Jussot, BT Chan, FA Mohiyaddin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.3. 1-38.3. 4, 2020
242020
Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation
M Shehata, G Simion, R Li, FA Mohiyaddin, D Wan, M Mongillo, ...
arXiv preprint arXiv:2210.04539, 2022
132022
Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process
NID Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, BT Chan, ...
2021 Symposium on VLSI Circuits, 1-2, 2021
112021
Low charge noise quantum dots with industrial CMOS manufacturing
A Elsayed, M Shehata, C Godfrin, S Kubicek, S Massar, Y Canvel, ...
arXiv preprint arXiv:2212.06464, 2022
102022
TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design
FA Mohiyaddin, G Simion, NID Stuyck, R Li, A Elsayed, M Shehata, ...
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
32020
A Scalable One Dimensional Silicon Qubit Array with Nanomagnets
G Simion, FA Mohiyaddin, R Li, M Shehata, NID Stuyck, A Elsayed, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.2. 1-30.2. 4, 2020
22020
Large-Scale 2D Spin-Based Quantum Processor with a Bi-Linear Architecture
FA Mohiyaddin, R Li, S Brebels, G Simion, NID Stuyck, C Godfrin, ...
2021 IEEE International Electron Devices Meeting (IEDM), 27.5. 1-27.5. 4, 2021
12021
Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing
IP Radu, R Li, A Potočnik, T Ivanov, D Wan, S Kubicek, NID Stuyck, ...
2021 Symposium on VLSI Technology, 1-2, 2021
12021
Quantum mechanical modeling of electron spins in realistic gate defined double quantum dots.
M Shehata, G Simion, FA Mohiyaddin, R Li, A Elsayed, C Godfrin, D Wan, ...
Bulletin of the American Physical Society, 2023
2023
Characterization of ultra-low charge noise Silicon MOS quantum dots fabricated in a full 300mm CMOS platform
A Elsayed, M Shehata, C Godfrin, R Li, S Kubicek, S Massar, Y Canvel, ...
Bulletin of the American Physical Society, 2023
2023
Si/SiGe quantum devices with full 300mm process
C Godfrin, A Elsayed, M Shehata, R Li, G Simion, S Kubicek, S Massar, ...
Bulletin of the American Physical Society, 2023
2023
Characterization of Silicon MOS quantum dots fabricated in a full 300mm CMOS process for spin qubit applications
A Elsayed, R Li, C Godfrin, N Dumoulin Stuyck, S Kubicek, J Jussot, ...
Bulletin of the American Physical Society, 2022
2022
Two-Level-Fluctuators as a source of 1/f noise and quantum gate errors in spin qubits
M Shehata, G Simion, F Mohiyaddin, R Li, A El Sayed, N Stuyck, ...
Bulletin of the American Physical Society, 2022
2022
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
NI Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, BT Chan, ...
arXiv preprint arXiv:2108.11317, 2021
2021
Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
NI Dumoulin Stuyck, R Li, C Godfrin, A Elsayed, S Kubicek, J Jussot, ...
arXiv e-prints, arXiv: 2108.11317, 2021
2021
Silicon spin qubit development in a 300 mm integrated process
N Dumoulin Stuyck, R Li, S Kubicek, F Mohiyaddin, B Govoreanu, ...
Bulletin of the American Physical Society 65, 2020
2020
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Articles 1–16