Michael Iza
Michael Iza
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High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
CJ Neufeld, NG Toledo, SC Cruz, M Iza, SP DenBaars, UK Mishra
Applied Physics Letters 93 (14), 2008
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
SP DenBaars, D Feezell, K Kelchner, S Pimputkar, CC Pan, CC Yen, ...
Acta Materialia 61 (3), 945-951, 2013
Method for improved growth of semipolar (Al, In, Ga, B) N
JF Kaeding, DS Lee, M Iza, TJ Baker, H Sato, BA Haskell, JS Speck, ...
US Patent 7,691,658, 2010
High internal and external quantum efficiency InGaN/GaN solar cells
E Matioli, C Neufeld, M Iza, SC Cruz, AA Al-Heji, X Chen, RM Farrell, ...
Applied Physics Letters 98 (2), 2011
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
KJ Vampola, M Iza, S Keller, SP DenBaars, S Nakamura
Applied Physics Letters 94 (6), 2009
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
K McGroddy, A David, E Matioli, M Iza, S Nakamura, S DenBaars, ...
Applied physics letters 93 (10), 2008
Method for deposition of magnesium doped (Al, In, Ga, B) N layers
M Iza, H Sato, SP DenBaars, S Nakamura
US Patent 7,709,284, 2010
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
RM Farrell, CJ Neufeld, SC Cruz, JR Lang, M Iza, S Keller, S Nakamura, ...
Applied Physics Letters 98 (20), 2011
High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates
A Tyagi, H Zhong, NN Fellows, M Iza, JS Speck, SP DenBaars, ...
Japanese Journal of Applied Physics 46 (2L), L129, 2007
High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals
E Matioli, E Rangel, M Iza, B Fleury, N Pfaff, J Speck, E Hu, C Weisbuch
Applied physics letters 96 (3), 2010
Method for conductivity control of (Al, In, Ga, B) N
JF Kaeding, H Sato, M Iza, H Asamizu, H Zhong, SP DenBaars, ...
US Patent 8,193,079, 2012
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
NG Young, RM Farrell, YL Hu, Y Terao, M Iza, S Keller, SP DenBaars, ...
Applied Physics Letters 103 (17), 2013
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
CJ Neufeld, SC Cruz, RM Farrell, M Iza, JR Lang, S Keller, S Nakamura, ...
Applied Physics Letters 98 (24), 2011
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
NG Young, EE Perl, RM Farrell, M Iza, S Keller, JE Bowers, S Nakamura, ...
Applied Physics Letters 104 (16), 2014
AlGaN deep-ultraviolet light-emitting diodes grown on SiC substrates
BK SaifAddin, AS Almogbel, CJ Zollner, F Wu, B Bonef, M Iza, ...
ACS Photonics 7 (3), 554-561, 2020
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
YL Hu, RM Farrell, CJ Neufeld, M Iza, SC Cruz, N Pfaff, D Simeonov, ...
Applied Physics Letters 100 (16), 2012
Light-polarization characteristics of electroluminescence from InGaN∕ GaN light-emitting diodes prepared on (112 2)-plane GaN
H Masui, TJ Baker, M Iza, H Zhong, S Nakamura, SP DenBaars
Journal of applied physics 100 (11), 2006
Size-independent peak external quantum efficiency (> 2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm
P Li, H Li, H Zhang, C Lynsky, M Iza, JS Speck, S Nakamura, ...
Applied Physics Letters 119 (8), 2021
Cone‐shaped surface GaN‐based light‐emitting diodes
T Fujii, A David, Y Gao, M Iza, SP DenBaars, EL Hu, C Weisbuch, ...
physica status solidi (c) 2 (7), 2836-2840, 2005
Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency
X Huang, H Fu, H Chen, X Zhang, Z Lu, J Montes, M Iza, SP DenBaars, ...
Applied Physics Letters 110 (16), 2017
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