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Shahadat Hasan Sohel
Shahadat Hasan Sohel
Postdoctoral Researcher
Verified email at nrel.gov
Title
Cited by
Cited by
Year
-Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
Z Xia, H Xue, C Joishi, J Mcglone, NK Kalarickal, SH Sohel, M Brenner, ...
IEEE Electron Device Letters 40 (7), 1052-1055, 2019
1012019
High Al-content AlGaN transistor with 0.5 A/mm current density and lateral breakdown field exceeding 3.6 MV/cm
S Bajaj, A Allerman, A Armstrong, T Razzak, V Talesara, W Sun, SH Sohel, ...
IEEE Electron Device Letters 39 (2), 256-259, 2017
562017
Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation
SH Sohel, MW Rahman, A Xie, E Beam, Y Cui, M Kruzich, H Xue, ...
IEEE Electron Device Letters 41 (1), 19-22, 2019
272019
X-band power and linearity performance of compositionally graded AlGaN channel transistors
SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ...
IEEE Electron Device Letters 39 (12), 1884-1887, 2018
242018
Al0. 75Ga0. 25N/Al0. 6Ga0. 4N heterojunction field effect transistor with fT of 40 GHz
H Xue, CH Lee, K Hussian, T Razzak, M Abdullah, Z Xia, SH Sohel, ...
Applied Physics Express 12 (6), 066502, 2019
232019
Polarization engineering of AlGaN/GaN HEMT with graded InGaN sub-channel for high-linearity X-band applications
SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, Y Cao, C Lee, W Lu, ...
IEEE Electron Device Letters 40 (4), 522-525, 2019
222019
BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
T Razzak, H Chandrasekar, K Hussain, CH Lee, A Mamun, H Xue, Z Xia, ...
Applied Physics Letters 116 (2), 023507, 2020
182020
Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors
T Razzak, S Hwang, A Coleman, H Xue, SH Sohel, S Bajaj, Y Zhang, ...
Applied Physics Letters 115 (4), 043502, 2019
182019
RF Operation in Graded AlxGa1-xN (x=0.65 to 0.82) Channel Transistors
T Razzak, S Hwang, A Coleman, SS Bajaj, H Xue, Y Zhang, ...
Electronics letters, 2018
182018
Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm
H Xue, K Hussain, T Razzak, M Gaevski, SH Sohel, S Mollah, V Talesara, ...
IEEE Electron Device Letters 41 (5), 677-680, 2020
172020
All MOCVD grown Al0. 7Ga0. 3N/Al0. 5Ga0. 5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
H Xue, S Hwang, T Razzak, C Lee, GC Ortiz, Z Xia, SH Sohel, J Hwang, ...
Solid-State Electronics 164, 107696, 2020
172020
Deep-Recessed β-Ga₂O₃ Delta-Doped Field-Effect Transistors With In Situ Epitaxial Passivation
C Joishi, Z Xia, JS Jamison, SH Sohel, RC Myers, S Lodha, S Rajan
IEEE Transactions on Electron Devices 67 (11), 4813-4819, 2020
162020
Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
SH Sohel, A Xie, E Beam, H Xue, T Razzak, S Bajaj, S Campbell, D White, ...
Applied Physics Express 13 (3), 036502, 2020
62020
Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide
J Cheng, MW Rahman, A Xie, H Xue, SH Sohel, E Beam, C Lee, H Yang, ...
IEEE Transactions on Electron Devices 68 (7), 3333-3338, 2021
32021
Epitaxial passivation of delta doped -Ga2O3 field effect transistors
C Joishi, Z Xia, SH Sohel, S Lodha, S Rajan
2019 Device Research Conference (DRC), 223-224, 2019
32019
Small-signal characteristics of graded AlGaN channel PolFETs
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, SH Sohel, S Krishnamoorthy, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
32017
Design of graded AlGaN channel transistors for improved large-signal linearity
SH Sohel, S Bajaj, T Razzak, DJ Meyer, S Rajan
Proc. Int. Conf. Compound Semiconductor Manuf. Technol., 1-4, 2018
22018
Small signal analysis of ultra-wide bandgap Al0. 7Ga0. 3N channel MESFETs
H Xue, T Razzak, S Hwang, A Coleman, SH Sohel, S Rajan, A Khan, ...
Microelectronic Engineering 237, 111495, 2021
12021
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs
H Xue, T Razzak, S Hwang, A Coleman, S Bajaj, Y Zhang, Z Jamal-Eddin, ...
2018 76th Device Research Conference (DRC), 1-2, 2018
12018
Effect of temperature on Quantum Cascade Laser emission as a function of cavity length
MSH Sohel, O Hassan, A Ahmed, F Hayee, R Faria, MA Talukder
2012 7th International Conference on Electrical and Computer Engineering …, 2012
12012
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Articles 1–20