| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 123 | 2019 |
| ScAlN/GaN high-electron-mobility transistors with 2.4-A/mm current density and 0.67-S/mm transconductance AJ Green, JK Gillespie, RC Fitch, DE Walker, M Lindquist, A Crespo, ... IEEE Electron Device Letters 40 (7), 1056-1059, 2019 | 77 | 2019 |
| RF power performance of Sc (al, Ga) N/GaN HEMTs at Ka-band AJ Green, N Moser, NC Miller, KJ Liddy, M Lindquist, M Elliot, JK Gillespie, ... IEEE Electron Device Letters 41 (8), 1181-1184, 2020 | 50 | 2020 |
| Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates KJ Liddy, AJ Green, NS Hendricks, ER Heller, NA Moser, KD Leedy, ... Applied Physics Express 12 (12), 126501, 2019 | 46 | 2019 |
| Sub-micron gallium oxide radio frequency field-effect transistors KD Chabak, DE Walker, AJ Green, A Crespo, M Lindquist, K Leedy, ... 2018 IEEE MTT-S International Microwave Workshop Series on Advanced …, 2018 | 43 | 2018 |
| Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ... IEEE Electron Device Letters 41 (7), 989-992, 2020 | 38 | 2020 |
| Self-Heating Characterization of -Ga2O3 Thin-Channel MOSFETs by Pulsed – and Raman Nanothermography NA Blumenschein, NA Moser, ER Heller, NC Miller, AJ Green, A Popp, ... IEEE Transactions on Electron Devices 67 (1), 204-211, 2019 | 29 | 2019 |
| As-grown two-dimensional MoS2 based photodetectors with naturally formed contacts S Khadka, TE Wickramasinghe, M Lindquist, R Thorat, SH Aleithan, ... Applied Physics Letters 110 (26), 2017 | 23 | 2017 |
| Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model NC Miller, NA Moser, RC Fitch, JK Gillespie, KJ Liddy, DE Walker, ... 2021 IEEE 21st Annual Wireless and Microwave Technology Conference (WAMICON …, 2021 | 14 | 2021 |
| Concurrent growth and formation of electrically contacted monolayer transition metal dichalcogenides on bulk metallic patterns S Khadka, M Lindquist, S Aleithan, A Blumer, T Wickramasinghe, ... arXiv preprint arXiv:1611.03887, 2016 | 12 | 2016 |
| Experimentally validated gate-lag simulations of AlGaN/GaN HEMTs using Fermi kinetics transport NC Miller, M Grupen, AE Islam, JD Albrecht, D Frey, R Young, M Lindquist, ... IEEE Transactions on Electron Devices 70 (2), 435-442, 2022 | 6 | 2022 |
| ASM-HEMT embedding model for accelerated design of PAs M Lindquist, P Roblin, NC Miller 2021 XXXIVth General Assembly and Scientific Symposium of the International …, 2021 | 5 | 2021 |
| Growth of complex 2D material-based structures with naturally formed contacts SH Aleithan, TE Wickramasinghe, M Lindquist, S Khadka, E Stinaff ACS omega 4 (5), 9557-9562, 2019 | 5 | 2019 |
| New Real-Time Pulsed-RF NVNA Testbed for Isothermal Characterization of Traps in GaN HEMTs M Lindquist, P Roblin, NC Miller 2023 IEEE/MTT-S International Microwave Symposium-IMS 2023, 1026-1029, 2023 | 2 | 2023 |
| Experimental validation of ASM-HEMT nonlinear embedding modeling of GaN HEMTs at X-band M Lindquist, P Roblin, NC Miller, D Davis, R Gilbert, M Elliott 2023 100th ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2023 | 2 | 2023 |
| Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces TE Wickramasinghe, G Jensen, R Thorat, M Lindquist, SH Aleithan, ... Applied Physics Letters 117 (21), 2020 | 2 | 2020 |
| Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs KJ Liddy, NS Hendricks, AJ Green, A Popp, MT Lindquist, KD Leedy, ... 2019 Device Research Conference (DRC), 219-220, 2019 | 2 | 2019 |
| Isothermal Characterization of Traps in GaN HEMTs Operating in Class B Using a Real-Time Pulsed-RF NVNA Testbed M Lindquist, P Roblin, D Mikrut, MJ Nichols, NC Miller IEEE Transactions on Microwave Theory and Techniques, 2024 | | 2024 |
| A Comparison Study on the Broadband Performance of Load-Modulated Architectures using Nonlinear Embedding at 20 GHz D Mikrut, P Roblin, M Lindquist, N Miller, D Frey 2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and …, 2023 | | 2023 |
| Pulsed RF Power Measurements of Laterally Scaled Ga2O3 FETs G Jessen, K Chabak, A Green, N Moser, K Leedy, D Walker, A Crespo, ... 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | | 2019 |
