| High-performance Ge-on-Si photodetectors J Michel, J Liu, LC Kimerling Nature Photonics 4 (8), 527-534, 2010 | 1516 | 2010 |
| Ge-on-Si laser operating at room temperature J Liu, X Sun, R Camacho-Aguilera, LC Kimerling, J Michel Optics letters 35 (5), 679-681, 2010 | 1116 | 2010 |
| Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si J Liu, X Sun, D Pan, X Wang, LC Kimerling, TL Koch, J Michel Optics Express 15 (18), 11272-11277, 2007 | 753 | 2007 |
| Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators J Liu, M Beals, A Pomerene, S Bernardis, R Sun, J Cheng, LC Kimerling, ... Nature Photonics 2 (7), 433-437, 2008 | 636 | 2008 |
| High performance, waveguide integrated Ge photodetectors D Ahn, C Hong, J Liu, W Giziewicz, M Beals, LC Kimerling, J Michel, ... Optics Express 15 (7), 3916-3921, 2007 | 553 | 2007 |
| Strain-induced band gap shrinkage in Ge grown on Si substrate Y Ishikawa, K Wada, DD Cannon, J Liu, HC Luan, LC Kimerling Applied Physics Letters 82 (13), 2044-2046, 2003 | 489 | 2003 |
| Efficiency enhancement in Si solar cells by textured photonic crystal back reflector L Zeng, Y Yi, C Hong, J Liu, N Feng, X Duan, LC Kimerling, BA Alamariu Applied Physics Letters 89 (11), 111111, 2006 | 434 | 2006 |
| Direct gap photoluminescence of n-type tensile-strained Ge-on-Si X Sun, J Liu, LC Kimerling, J Michel Applied Physics Letters 95 (1), 011911-011911-3, 2009 | 350 | 2009 |
| Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes X Sun, J Liu, LC Kimerling, J Michel Optics letters 34 (8), 1198-1200, 2009 | 309 | 2009 |
| ATAC: A 1000-core cache-coherent processor with on-chip optical network G Kurian, JE Miller, J Psota, J Eastep, J Liu, J Michel, LC Kimerling, ... Proceedings of the 19th international conference on Parallel architectures …, 2010 | 302 | 2010 |
| Demonstration of enhanced absorption in thin film Si solar cells with textured photonic crystal back reflector L Zeng, P Bermel, Y Yi, BA Alamariu, KA Broderick, J Liu, C Hong, X Duan, ... Applied Physics Letters 93 (22), 221105, 2008 | 283 | 2008 |
| High-performance, tensile-strained Ge pin photodetectors on a Si platform J Liu, J Michel, W Giziewicz, D Pan, K Wada, DD Cannon, ... Applied Physics Letters 87 (10), 103501, 2005 | 277 | 2005 |
| Tensile strained Ge pin photodetectors on Si platform for C and L band telecommunications J Liu, DD Cannon, K Wada, Y Ishikawa, S Jongthammanurak, ... Applied Physics Letters 87 (1), 011110-011110-3, 2005 | 272 | 2005 |
| An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 171105, 2016 | 232 | 2016 |
| Electronic-photonic integrated circuits on the CMOS platform LC Kimerling, D Ahn, AB Apsel, M Beals, D Carothers, YK Chen, ... Proc. SPIE 6125 (612502), 612502-10, 2006 | 214 | 2006 |
| Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si (100) J Liu, DD Cannon, K Wada, Y Ishikawa, DT Danielson, ... Physical Review B 70 (15), 155309, 2004 | 213 | 2004 |
| Direct-gap optical gain of Ge on Si at room temperature J Liu, X Sun, LC Kimerling, J Michel Optics letters 34 (11), 1738-1740, 2009 | 205 | 2009 |
| Tensile strained epitaxial Ge films on Si (100) substrates with potential application in L-band telecommunications DD Cannon, J Liu, Y Ishikawa, K Wada, DT Danielson, ... Applied physics letters 84 (6), 906-908, 2004 | 203 | 2004 |
| Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate Y Ishikawa, K Wada, J Liu, DD Cannon, HC Luan, J Michel, LC Kimerling Journal of applied physics 98 (1), 013501, 2005 | 201 | 2005 |
| Ge-on-Si optoelectronics J Liu, R Camacho-Aguilera, JT Bessette, X Sun, X Wang, Y Cai, ... Thin Solid Films 520 (8), 3354-3360, 2012 | 199 | 2012 |
Jurgen MichelMassachusetts Institute of TechnologyVerified email at mit.edu
