Jing Li (李景）

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Jingyu Lin (林景瑜）Linda Whitacre Endowed Chair & P. W. Horn Distinguished Professor of ECE, Texas Tech UniversityVerified email at ttu.edu
Hongxing Jiang (江红星）Ed Whitacre Endowed Chair and P. W. Horn Distinguished Professor of ECE, Texas Tech UniversityVerified email at ttu.edu
Mim Lal NakarmiProfessor of Physics, Brooklyn College-CUNYVerified email at brooklyn.cuny.edu
Sashikanth MajetyEngineering Technology Development Manager, Intel CorporationVerified email at intel.com
Sam GrenadierGraduate Research Assistant, Texas Tech UniversityVerified email at ttu.edu
Avisek MaityLTD Process Engineer, Intel CorpVerified email at intel.com
Zhaoyang FanProfessor of Electrical Engineering, Arizona State UniversityVerified email at asu.edu
Tri Cao DoanSenior Product Development Engineer, PhD, Intel, OregonVerified email at intel.com
Neeraj NepalUS Naval Research LaboratoryVerified email at nrl.navy.mil
Krishna AryalProcess Technology Development, Intel CorporationVerified email at intel.com
Prof. Donald LieK.S. Lu Regents Chair Professor, Texas Tech UniversityVerified email at ttu.edu
Xiaozhang DuVerified email at ttu.edu
Suhuai WeiBeijing Computational Science Research CenterVerified email at csrc.ac.cn
Jagat ShakyaIntel CorporationVerified email at ksu.edu
T. M. Al tahtamouniProfessor of Physics and Materials Science at Qatar UniversityVerified email at qu.edu.qa
Rongqing HuiProfessor, Electrical Engineering and Computer Science, the University of KansasVerified email at ku.edu
Yaqiong YanTexas Tech UniversityVerified email at ttu.edu
Xianan Cao (X. A. Cao)West Virginia UniversityVerified email at mix.wvu.edu
Rajendra DahalIntel Corporation
Ashok SedhainPrincipal Process Engineer Metrology, Globalfoundries

Jing Li (李景）

Research Professor of Nanophotonics center, Texas Tech University

Verified email at ttu.edu

semiconductor MOCVD


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Band structure and fundamental optical transitions in wurtzite AlN J Li, KB Nam, ML Nakarmi, JY Lin, HX Jiang, P Carrier, SH Wei Applied Physics Letters 83 (25), 5163-5165, 2003	463	2003
InGaN/GaN multiple quantum well solar cells with long operating wavelengths R Dahal, B Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 94 (6), 063505, 2009	454	2009
Unique optical properties of alloys and related ultraviolet emitters KB Nam, J Li, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 84 (25), 5264-5266, 2004	426	2004
III-nitride blue microdisplays HX Jiang, SX Jin, J Li, J Shakya, JY Lin Applied Physics Letters 78 (9), 1303-1305, 2001	369	2001
III-Nitride full-scale high-resolution microdisplays J Day, J Li, DYC Lie, C Bradford, JY Lin, HX Jiang Applied Physics Letters 99 (3), 031116, 2011	362	2011
Mg acceptor level in AlN probed by deep ultraviolet photoluminescence KB Nam, ML Nakarmi, J Li, JY Lin, HX Jiang Applied physics letters 83 (5), 878-880, 2003	343	2003
GaN microdisk light emitting diodes SX Jin, J Li, JZ Li, JY Lin, HX Jiang Applied Physics Letters 76 (5), 631-633, 2000	255	2000
InGaN/GaN multiple quantum well concentrator solar cells R Dahal, J Li, K Aryal, JY Lin, HX Jiang Applied Physics Letters 97 (7), 073115, 2010	251	2010
Optical and electrical properties of Mg-doped p-type J Li, TN Oder, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 80 (7), 1210-1212, 2002	236	2002
deep ultraviolet photodetectors based on AlN J Li, ZY Fan, R Dahal, ML Nakarmi, JY Lin, HX Jiang Applied physics letters 89 (21), 213510, 2006	235	2006
Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material R Dahal, J Li, S Majety, BN Pantha, XK Cao, JY Lin, HX Jiang Applied Physics Letters 98 (21), 211110, 2011	222	2011
Temperature and compositional dependence of the energy band gap of AlGaN alloys N Nepal, J Li, ML Nakarmi, JY Lin, HX Jiang Applied Physics Letters 87 (24), 242104, 2005	218	2005
Micro-emitter array based full-color micro-display Z Fan, J Li, J Lin, H Jiang US Patent 8,058,663, 2011	213	2011
InGaN/GaN quantum well interconnected microdisk light emitting diodes SX Jin, J Li, JY Lin, HX Jiang Applied Physics Letters 77 (20), 3236-3238, 2000	186	2000
Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping ML Nakarmi, KH Kim, J Li, JY Lin, HX Jiang Applied physics letters 82 (18), 3041-3043, 2003	181	2003
Time-resolved photoluminescence studies of alloys HS Kim, RA Mair, J Li, JY Lin, HX Jiang Applied Physics Letters 76 (10), 1252-1254, 2000	177	2000
Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers J Li, S Majety, R Dahal, WP Zhao, JY Lin, HX Jiang Applied Physics Letters 101 (17), 171112, 2012	163	2012
Correlation between optoelectronic and structural properties and epilayer thickness of AlN BN Pantha, R Dahal, ML Nakarmi, N Nepal, J Li, JY Lin, HX Jiang, ... Applied physics letters 90 (24), 241101, 2007	163	2007
Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells K Aryal, BN Pantha, J Li, JY Lin, HX Jiang Applied Physics Letters 96 (5), 052110, 2010	161	2010
Thermoelectric properties of alloys BN Pantha, R Dahal, J Li, JY Lin, HX Jiang, G Pomrenke Applied Physics Letters 92 (4), 042112, 2008	155	2008

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