Xing Li
Xing Li
Ostendo Technologies, Inc
Verified email at mymail.vcu.edu - Homepage
Title
Cited by
Cited by
Year
GaN-based light-emitting diodes: Efficiency at high injection levels
U Ozgur, H Liu, X Li, X Ni, H Morkoc
Proceedings of the IEEE 98 (7), 1180-1196, 2010
1402010
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
X Li, X Ni, J Lee, M Wu, Ö Ü, H Morkoç, T Paskova, G Mulholland, ...
SPIE Proceedings, 7602, 2010
125*2010
On carrier spillover in c-and m-plane InGaN light emitting diodes
J Lee, X Li, X Ni, Ü Özgür, H Morkoç, T Paskova, G Mulholland, KR Evans
Applied Physics Letters 95, 201113, 2009
125*2009
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
X Li, X Ni, J Lee, M Wu, Ü Özgür, H Morkoç, T Paskova, G Mulholland, ...
Applied Physics Letters 95, 121107, 2009
125*2009
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis, ...
Applied Physics Letters 97, 031110, 2010
952010
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
X Ni, X Li, J Lee, S Liu, V Avrutin, Ü Özgür, H Morkoç, A Matulionis
Journal of Applied Physics 108 (3), 033112, 2010
732010
Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
X Ni, X Li, J Lee, S Liu, V Avrutin, A Matulionis, U Ozgur, H Morkoç
Superlattices and Microstructures 48 (2), 133-153, 2010
532010
Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
Electron Device Letters, IEEE 33 (3), 366-368, 2012
522012
Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95, 223504, 2009
502009
Nonpolar m-plane GaN on patterned Si (112) substrates by metalorganic chemical vapor deposition
X Ni, M Wu, J Lee, X Li, AA Baski, Ü Özgür, H Morkoç
Applied Physics Letters 95, 111102, 2009
482009
Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
A Matulionis, J Liberis, I Matulionienė, M Ramonas, E Šermukšnis, ...
Applied Physics Letters 95 (19), 192102, 2009
472009
Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 96, 133505, 2010
402010
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
X Li, S Okur, F Zhang, V Avrutin, Ü Özgür, H Morkoç, SM Hong, SH Yen, ...
Journal of Applied Physics 111 (6), 063112-063112-8, 2012
392012
Synthesis and characterization of room-temperature ferromagnetism in Fe-and Ni-co-doped In2O3
X Li, C Xia, G Pei, X He
Journal of Physics and Chemistry of Solids 68 (10), 1836-1840, 2007
382007
Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
JH Leach, M Wu, X Ni, X Li, Ü Özgür, H Morkoç
physica status solidi (a) 207 (1), 211-216, 2010
322010
Ballistic transport in InGaN-based LEDs: impact on efficiency
Ü Özgür, X Ni, X Li, J Lee, S Liu, S Okur, V Avrutin, A Matulionis, H Morkoç
Semiconductor Science and Technology 26, 014022, 2011
302011
Low-Frequency Noise Measurements of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors With HfAlO Gate Dielectric
C Kayis, JH Leach, CY Zhu, M Wu, X Li, U Ozgur, H Morkoc, X Yang, ...
IEEE Electron Device Letters 31 (9), 1041-1043, 2010
302010
Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN
X Ni, J Lee, M Wu, X Li, R Shimada, Ü Özgür, AA Baski, H Morkoç, ...
Applied Physics Letters 95, 101106, 2009
302009
Influences of Al doping concentration on structural, electrical and optical properties of Zn0. 95Ni0. 05O powders
G Pei, F Wu, C Xia, J Zhang, X Li, J Xu
Current Applied Physics 8 (1), 18-23, 2008
302008
InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide
X Li, HY Liu, S Liu, X Ni, M Wu, V Avrutin, N Izyumskaya, Ü Özgür, ...
physica status solidi (a) 207 (8), 1993-1996, 2010
262010
The system can't perform the operation now. Try again later.
Articles 1–20