W.M.M. (Erwin) KESSELS
W.M.M. (Erwin) KESSELS
Unknown affiliation
Verified email at tue.nl - Homepage
Title
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Year
Ultralow surface recombination of substrates passivated by plasma-assisted atomic layer deposited
B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (4), 042112, 2006
7922006
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al 2 O 3
B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels
Applied Physics Letters 89 (4), 042112, 2006
7922006
Plasma-assisted atomic layer deposition: basics, opportunities, and challenges
HB Profijt, SE Potts, MCM Van de Sanden, WMM Kessels
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 29 (5 …, 2011
7722011
Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
G Dingemans, WMM Kessels
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30 (4 …, 2012
7002012
On the surface passivation mechanism by the negative-charge-dielectric
B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels
Journal of Applied Physics 104 (11), 113703, 2008
5992008
Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3
J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels
Progress in photovoltaics: research and applications 16 (6), 461-466, 2008
5162008
Silicon surface passivation by atomic layer deposited
B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels
Journal of Applied Physics 104 (4), 044903, 2008
5142008
Excellent passivation of highly doped -type Si surfaces by the negative-charge-dielectric
B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ...
Applied Physics Letters 91 (11), 112107, 2007
4492007
High efficiency -type Si solar cells on -passivated boron emitters
J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ...
Applied Physics Letters 92 (25), 253504, 2008
4282008
Determining the material structure of microcrystalline silicon from Raman spectra
C Smit, R Van Swaaij, H Donker, A Petit, WMM Kessels, ...
Journal of applied physics 94 (5), 3582-3588, 2003
3782003
In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition
E Langereis, SBS Heil, HCM Knoops, W Keuning, MCM Van de Sanden, ...
Journal of Physics D: Applied Physics 42 (7), 073001, 2009
3262009
Plasma-assisted atomic layer deposition of moisture permeation barriers on polymers
E Langereis, M Creatore, SBS Heil, MCM Van de Sanden, WMM Kessels
Applied physics letters 89 (8), 081915, 2006
3072006
Plasma and Thermal ALD of Al2O3 in a Commercial 200 mm ALD Reactor
JL Van Hemmen, SBS Heil, JH Klootwijk, F Roozeboom, CJ Hodson, ...
Journal of the Electrochemical Society 154 (7), G165, 2007
2772007
Vacancies and voids in hydrogenated amorphous silicon
AHM Smets, WMM Kessels, MCM Van de Sanden
Applied physics letters 82 (10), 1547-1549, 2003
2752003
The use of atomic layer deposition in advanced nanopatterning
AJM Mackus, AA Bol, WMM Kessels
Nanoscale 6 (19), 10941-10960, 2014
2492014
Flexible Perovskite Photovoltaic Modules and Solar Cells Based on Atomic Layer Deposited Compact Layers and UV‐Irradiated TiO2 Scaffolds on Plastic Substrates
F Di Giacomo, V Zardetto, A D'Epifanio, S Pescetelli, F Matteocci, S Razza, ...
Advanced Energy Materials 5 (8), 1401808, 2015
2162015
Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
G Dingemans, R Seguin, P Engelhart, MCM Sanden, WMM Kessels
physica status solidi (RRL)–Rapid Research Letters 4 (1‐2), 10-12, 2010
2062010
Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing
JA Van Delft, D Garcia-Alonso, WMM Kessels
Semiconductor Science and Technology 27 (7), 074002, 2012
2052012
Influence of the deposition temperature on the c-Si surface passivation by Al2O3 films synthesized by ALD and PECVD
G Dingemans, MCM Van de Sanden, WMM Kessels
Electrochemical and Solid State Letters 13 (3), H76, 2009
2022009
Method and apparatus for atomic layer deposition using an atmospheric pressure glow discharge plasma
HW De Vries
US Patent App. 12/676,877, 2010
1882010
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