Cora Salm
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The charge plasma PN diode
RJE Hueting, B Rajasekharan, C Salm, J Schmitz
IEEE electron device letters 29 (12), 1367-1369, 2008
Fabrication and characterization of the charge-plasma diode
B Rajasekharan, RJE Hueting, C Salm, T Van Hemert, RAM Wolters, ...
IEEE electron device letters 31 (6), 528-530, 2010
An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology
M Chefdeville, P Colas, Y Giomataris, H van der Graaf, EHM Heijne, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006
Low-frequency noise phenomena in switched MOSFETs
AP Van Der Wel, EAM Klumperink, JS Kolhatkar, E Hoekstra, MF Snoeij, ...
IEEE journal of solid-state circuits 42 (3), 540-550, 2007
Structural and optical characterization of porous anodic aluminum oxide
AC Gâlcă, ES Kooij, H Wormeester, C Salm, V Leca, JH Rector, ...
Journal of applied physics 94 (7), 4296-4305, 2003
Diffusion and Electrical Properties of Boron and Arsenic Doped Poly‐Si and Poly‐Ge x Si1− x (x∼ 0.3) as Gate Material for Sub‐0.25 μm Complementary Metal Oxide Semiconductor …
C Salm, DT Van Veen, DJ Gravesteijn, J Holleman, PH Woerlee
Journal of the Electrochemical Society 144 (10), 3665, 1997
The electrical conduction and dielectric strength of SU-8
J Melai, C Salm, S Smits, J Visschers, J Schmitz
Journal of micromechanics and microengineering 19 (6), 065012, 2009
High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates
YV Ponomarev, PA Stolk, C Salm, J Schmitz, PH Woerlee
IEEE Transactions on Electron Devices 47 (4), 848-855, 2000
Effect of thermal gradients on the electromigration life-time in power electronics
HV Nguyen, C Salm, B Krabbenborg, K Weide-Zaage, J Bisschop, ...
2004 IEEE International Reliability Physics Symposium. Proceedings, 619-620, 2004
Gate-workfunction engineering using poly-(Si, Ge) for high-performance 0.18/spl mu/m CMOS technology
YV Ponomarev, C Salm, J Schmitz, PH Woerlee, PA Stolk, DJ Gravesteijn
International Electron Devices Meeting. IEDM Technical Digest, 829-832, 1997
Gate current and oxide reliability in p/sup+/poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/gate material
C Salm, JH Klootwijk, Y Ponomarev, PWM Boos, DJ Gravesteijn, ...
IEEE Electron Device Letters 19 (7), 213-215, 1998
A radiation imaging detector made by postprocessing a standard CMOS chip
VMB Carballo, M Chefdeville, M Fransen, H Van Der Graaf, J Melai, ...
IEEE electron device letters 29 (6), 585-587, 2008
Spark protection layers for CMOS pixel anode chips in MPGDs
Y Bilevych, VMB Carballo, M Chefdeville, P Colas, E Delagnes, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011
Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions
JS Kolhatkar, LKJ Vandamme, C Salm, H Wallinga
ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003
Moisture resistance of SU-8 and KMPR as structural material
VMB Carballo, J Melai, C Salm, J Schmitz
Microelectronic engineering 86 (4-6), 765-768, 2009
Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation
JS Kolhatkar, E Hoekstra, C Salm, AP Van der Wel, EAM Klumperink, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Plasma-charging damage of floating MIM capacitors
Z Wang, J Ackaert, C Salm, FG Kuper, M Tack, E De Backer, P Coppens, ...
IEEE Transactions on Electron Devices 51 (6), 1017-1024, 2004
Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling
VH Nguyen, H Nguyen, C Salm, J Vroemen, J Voets, BH Krabbenborg, ...
Microelectronics reliability 42 (9-11), 1415-1420, 2002
Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations
AJ Mouthaan, C Salm, MM Lunenborg, M De Wolf, FG Kuper
Microelectronics Reliability 40 (6), 909-917, 2000
The charge plasma pn diode
B Rajasekharan, C Salm, RJE Hueting, T Hoang, J Schmitz
IEEE Electron Device Lett 29 (12), 1367-1369, 2008
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