| The charge plasma PN diode RJE Hueting, B Rajasekharan, C Salm, J Schmitz IEEE electron device letters 29 (12), 1367-1369, 2008 | 305 | 2008 |
| Fabrication and characterization of the charge-plasma diode B Rajasekharan, RJE Hueting, C Salm, T Van Hemert, RAM Wolters, ... IEEE electron device letters 31 (6), 528-530, 2010 | 234 | 2010 |
| An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology M Chefdeville, P Colas, Y Giomataris, H van der Graaf, EHM Heijne, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2006 | 128 | 2006 |
| Low-frequency noise phenomena in switched MOSFETs AP Van Der Wel, EAM Klumperink, JS Kolhatkar, E Hoekstra, MF Snoeij, ... IEEE journal of solid-state circuits 42 (3), 540-550, 2007 | 94 | 2007 |
| Structural and optical characterization of porous anodic aluminum oxide AC Gâlcă, ES Kooij, H Wormeester, C Salm, V Leca, JH Rector, ... Journal of applied physics 94 (7), 4296-4305, 2003 | 89 | 2003 |
| Diffusion and Electrical Properties of Boron and Arsenic Doped Poly‐Si and Poly‐Ge x Si1− x (x∼ 0.3) as Gate Material for Sub‐0.25 μm Complementary Metal Oxide Semiconductor … C Salm, DT Van Veen, DJ Gravesteijn, J Holleman, PH Woerlee Journal of the Electrochemical Society 144 (10), 3665, 1997 | 72 | 1997 |
| The electrical conduction and dielectric strength of SU-8 J Melai, C Salm, S Smits, J Visschers, J Schmitz Journal of micromechanics and microengineering 19 (6), 065012, 2009 | 68 | 2009 |
| High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates YV Ponomarev, PA Stolk, C Salm, J Schmitz, PH Woerlee IEEE Transactions on Electron Devices 47 (4), 848-855, 2000 | 49 | 2000 |
| Effect of thermal gradients on the electromigration life-time in power electronics HV Nguyen, C Salm, B Krabbenborg, K Weide-Zaage, J Bisschop, ... 2004 IEEE International Reliability Physics Symposium. Proceedings, 619-620, 2004 | 43 | 2004 |
| Gate-workfunction engineering using poly-(Si, Ge) for high-performance 0.18/spl mu/m CMOS technology YV Ponomarev, C Salm, J Schmitz, PH Woerlee, PA Stolk, DJ Gravesteijn International Electron Devices Meeting. IEDM Technical Digest, 829-832, 1997 | 41 | 1997 |
| Gate current and oxide reliability in p/sup+/poly MOS capacitors with poly-Si and poly-Ge/sub 0.3/Si/sub 0.7/gate material C Salm, JH Klootwijk, Y Ponomarev, PWM Boos, DJ Gravesteijn, ... IEEE Electron Device Letters 19 (7), 213-215, 1998 | 37 | 1998 |
| A radiation imaging detector made by postprocessing a standard CMOS chip VMB Carballo, M Chefdeville, M Fransen, H Van Der Graaf, J Melai, ... IEEE electron device letters 29 (6), 585-587, 2008 | 35 | 2008 |
| Spark protection layers for CMOS pixel anode chips in MPGDs Y Bilevych, VMB Carballo, M Chefdeville, P Colas, E Delagnes, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2011 | 31 | 2011 |
| Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions JS Kolhatkar, LKJ Vandamme, C Salm, H Wallinga ESSDERC'03. 33rd Conference on European Solid-State Device Research, 2003 …, 2003 | 31 | 2003 |
| Moisture resistance of SU-8 and KMPR as structural material VMB Carballo, J Melai, C Salm, J Schmitz Microelectronic engineering 86 (4-6), 765-768, 2009 | 30 | 2009 |
| Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation JS Kolhatkar, E Hoekstra, C Salm, AP Van der Wel, EAM Klumperink, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 28 | 2004 |
| Plasma-charging damage of floating MIM capacitors Z Wang, J Ackaert, C Salm, FG Kuper, M Tack, E De Backer, P Coppens, ... IEEE Transactions on Electron Devices 51 (6), 1017-1024, 2004 | 27 | 2004 |
| Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling VH Nguyen, H Nguyen, C Salm, J Vroemen, J Voets, BH Krabbenborg, ... Microelectronics reliability 42 (9-11), 1415-1420, 2002 | 26 | 2002 |
| Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations AJ Mouthaan, C Salm, MM Lunenborg, M De Wolf, FG Kuper Microelectronics Reliability 40 (6), 909-917, 2000 | 20 | 2000 |
| The charge plasma pn diode B Rajasekharan, C Salm, RJE Hueting, T Hoang, J Schmitz IEEE Electron Device Lett 29 (12), 1367-1369, 2008 | 19 | 2008 |
