Follow
Hamdam Ghanatian Najafabadi
Title
Cited by
Cited by
Year
Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs
H Ghanatian, SE Hosseini
Journal of Computational Electronics 15, 508-515, 2016
262016
Spin-orbit-torque-based devices, circuits and architectures
F Moradi, H Farkhani, B Zeinali, H Ghanatian, JMA Pelloux-Prayer, ...
arXiv preprint arXiv:1912.01347, 2019
162019
Memory and communication-in-logic using vortex and precessional oscillations in a magnetic tunnel junction
S Shreya, M Zamani, Y Rezaeiyan, H Ghanatian, T Böhnert, AS Jenkins, ...
IEEE Magnetics Letters 13, 1-5, 2022
52022
Improvement of short channel effects in cylindrical strained silicon nanowire transistor
F Karimi, M Fathipour, H Ghanatian, V Fathipour
Eng. Technol 70, 467-470, 2010
52010
A 3-bit flash spin-orbit torque (SOT)-analog-to-digital converter (ADC)
H Ghanatian, H Farkhani, Y Rezaeiyan, T Böhnert, R Ferreira, F Moradi
IEEE Transactions on Electron Devices 69 (4), 1691-1697, 2022
42022
STDP implementation using multi-state spin− orbit torque synapse
H Ghanatian, M Ronchini, H Farkhani, F Moradi
Semiconductor Science and Technology 37 (2), 024004, 2021
42021
Quasi-Schottky-Barrier UTBB SOI MOSFET for low-power robust SRAMs
H Ghanatian, SE Hosseini, B Zeinali, F Moradi
IEEE Transactions on Electron Devices 64 (4), 1575-1582, 2017
42017
A Comparison Study of Electrical Characteristics in Conventional Multiple-gate Silicon Nanowire Transistors
F Karimi, M Fathipour, H Ghanatian, V Fathipour
World Academy of Science, Engineering and Technology International Journal …, 2010
42010
Nanoscale Ultra Thin Body-Silicon-On-Insulator field effect transistor with step BOX: Self-heating and short channel effects
H GHanatian, M Fathipour, H Talebi
2009 10th International Conference on Ultimate Integration of Silicon, 325-328, 2009
42009
Spin–orbit torque flash analog-to-digital converter
H Ghanatian, L Benetti, P Anacleto, T Böhnert, H Farkhani, R Ferreira, ...
Scientific Reports 13 (1), 9416, 2023
2023
A Hybrid Spin-CMOS Flash ADC based on Spin Hall Effect and Spin Transfer Torque
H Ghanatian, H Farkhani, F Moradi
2022 IEEE 40th International Conference on Computer Design (ICCD), 701-704, 2022
2022
Analytical modeling of potential distribution in trigate SOI MOSFETs
H Ghanatian, SE Hosseini
2015 23rd Iranian Conference on Electrical Engineering, 1240-1244, 2015
2015
Novel techniques for off-state current components reduction in double gate source-heterojunction-MOS-transistor
M Tahermaram, M Vadizadeh, H Ghanatian, M Fathipour
2009 1st Asia Symposium on Quality Electronic Design, 242-245, 2009
2009
Placement and configuration of nanowires CMOL technology
H Heidari, S Mirzakuchaki, H Ghanatian
Amvaj-e-Bartar Magazine 30, 33-41, 2007
2007
The system can't perform the operation now. Try again later.
Articles 1–14