D.L. Huffaker, Diana Huffaker, Diana L. Huffaker

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BAOLAI LIANGUCLAVerified email at cnsi.ucla.edu
Ganesh BalakrishnanProfessor, ECE department, Assoc Director CHTM/UNMVerified email at unm.edu
L. Ralph DawsonResearch Professor of ECE, University of New MexicoVerified email at chtm.unm.edu
Jun TatebayashiOsaka UniversityVerified email at mat.eng.osaka-u.ac.jp
Dr. R. B. LaghumavarapuStaff Research Associate-III, University of California Los AngelesVerified email at ucla.edu
Andrew LinPh.D. Student of Electrical Engineering, University of California, Los AngelesVerified email at ucla.edu
Joshua N. ShapiroUniversity of California at Los Angeles, Electrical Engineering Dept.Verified email at ee.ucla.edu
Noppadon NuntawongNational Electronics and Computer Technology CenterVerified email at nectec.or.th
Adam ScofieldRockley PhotonicsVerified email at rockleyphotonics.com
Pradeep SenanayakeUniversity of California Los AngelesVerified email at ucla.edu
Giacomo MarianiNASA Jet Propulsion LaboratoryVerified email at jpl.nasa.gov
Alan C FarrellNorthrop Grumman CorporationVerified email at ngc.com
Luke F. LesterRoanoke Electric Steel Professor and Head, Bradley Dept of ECE, Virginia TechVerified email at vt.edu
Hyunseok KimMassachusetts Institute of TechnologyVerified email at mit.edu
Maya Narayanan KuttyPostdoctoral Research Fellow Centre for Materials Science and Nanotechnology (SMN), Department ofVerified email at smn.uio.no
Guillaume HuyetUniversité Côte d'Azur, CNRS, Institut de Physique de NiceVerified email at inphyni.cnrs.fr
Kalyan NunnaDrVerified email at iqep.com
Wook-Jae LeeKongju National UniversityVerified email at kongju.ac.kr
Gregory SalamoProfessor of Physics, University of ArkansasVerified email at uark.edu
Jaeho ShinResearch Associate, Center for Applied Biomechanics, UVAVerified email at virginia.edu

D.L. Huffaker, Diana Huffaker, Diana L. Huffaker

Chair EE department, UT Arlington and Adjunct Professor of Electrical Engineering, UCLA

Verified email at uta.edu - Homepage

semiconductor physics semiconductor devices epitaxy nanotechnology


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1.3 μm room-temperature GaAs-based quantum-dot laser DL Huffaker, G Park, Z Zou, OB Shchekin, DG Deppe Applied Physics Letters 73 (18), 2564-2566, 1998	979	1998
Native‐oxide defined ring contact for low threshold vertical‐cavity lasers DL Huffaker, DG Deppe, K Kumar, TJ Rogers Applied Physics Letters 65 (1), 97-99, 1994	740	1994
Low-threshold oxide-confined 1.3-μm quantum-dot laser G Park, OB Shchekin, DL Huffaker, DG Deppe IEEE Photonics Technology Letters 12 (3), 230-232, 2000	408	2000
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ... Applied physics letters 88 (13), 131911, 2006	269	2006
GaAs nanopillar-array solar cells employing in situ surface passivation G Mariani, AC Scofield, CH Hung, DL Huffaker Nature communications 4 (1), 1-8, 2013	239	2013
type II quantum dot solar cells for enhanced infrared spectral response RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ... Applied Physics Letters 90 (17), 173125, 2007	226	2007
Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots DL Huffaker, DG Deppe Applied physics letters 73 (4), 520-522, 1998	215	1998
Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser G Park, OB Shchekin, S Csutak, DL Huffaker, DG Deppe Applied physics letters 75 (21), 3267-3269, 1999	213	1999
Improved device performance of quantum dot solar cells with GaP strain compensation layers RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ... Applied Physics Letters 91 (24), 243115, 2007	202	2007
Patterned radial GaAs nanopillar solar cells G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker Nano letters 11 (6), 2490-2494, 2011	165	2011
Low threshold half-wave vertical-cavity lasers DL Huffaker, J Shin, DG Deppe Electronics Letters 30 (23), 1946-1947, 1994	162	1994
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers OB Shchekin, G Park, DL Huffaker, DG Deppe Applied Physics Letters 77 (4), 466-468, 2000	158	2000
Poisson’s ratio measurement in tungsten thin films combining an x-ray diffractometer with in situ tensile tester PO Renault, KF Badawi, L Bimbault, P Goudeau, E Elkaım, JP Lauriat Applied physics letters 73 (14), 1952-1954, 1998	153*	1998
Spontaneous emission from planar microstructures DG Deppe, C Lei, CC Lin, DL Huffaker Journal of Modern Optics 41 (2), 325-344, 1994	153	1994
Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers G Park, DL Huffaker, Z Zou, OB Shchekin, DG Deppe IEEE Photonics Technology Letters 11 (3), 301-303, 1999	138	1999
Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors DL Huffaker, LA Graham, H Deng, DG Deppe IEEE Photonics Technology Letters 8 (8), 974-976, 1996	132	1996
Bottom-up photonic crystal lasers AC Scofield, SH Kim, JN Shapiro, A Lin, B Liang, A Scherer, DL Huffaker Nano letters 11 (12), 5387-5390, 2011	119	2011
Spontaneous lifetime control in a native-oxide-apertured microcavity LA Graham, DL Huffaker, DG Deppe Applied physics letters 74 (17), 2408-2410, 1999	114	1999
Interfacial misfit array formation for GaSb growth on GaAs S Huang, G Balakrishnan, DL Huffaker Journal of Applied Physics 105 (10), 103104, 2009	109	2009
Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture DL Huffaker, O Baklenov, LA Graham, BG Streetman, DG Deppe Applied physics letters 70 (18), 2356-2358, 1997	109	1997

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