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Roberto Lacerda de Orio
Roberto Lacerda de Orio
Institute for Microelectronics, TU Wien
Verified email at iue.tuwien.ac.at - Homepage
Title
Cited by
Cited by
Year
Physically based models of electromigration: From Black’s equation to modern TCAD models
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 50 (6), 775-789, 2010
1482010
A comprehensive TCAD approach for assessing electromigration reliability of modern interconnects
H Ceric, RL de Orio, J Cervenka, S Selberherr
IEEE Transactions on Device and Materials Reliability 9 (1), 9-19, 2008
552008
Electromigration failure in a copper dual-damascene structure with a through silicon via
RL de Orio, H Ceric, S Selberherr
Microelectronics Reliability 52 (9-10), 1981-1986, 2012
352012
Electromigration modeling and simulation
RL De Orio
na, 2010
242010
A compact model for early electromigration failures of copper dual-damascene interconnects
RL De Orio, H Ceric, S Selberherr
Microelectronics Reliability 51 (9-11), 1573-1577, 2011
222011
Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM
RL de Orio, A Makarov, S Selberherr, W Goes, J Ender, S Fiorentini, ...
Solid-State Electronics 168, 107730, 2020
132020
Optimization of a spin-orbit torque switching scheme based on micromagnetic simulations and reinforcement learning
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov
Micromachines 12 (4), 443, 2021
82021
Two-pulse magnetic field-free switching scheme for perpendicular SOT-MRAM with a symmetric square free layer
RL De Orio, A Makarov, W Goes, J Ender, S Fiorentini, V Sverdlov
Physica B: Condensed Matter 578, 411743, 2020
82020
Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
E Baer, P Evanschitzky, J Lorenz, F Roger, R Minixhofer, L Filipovic, ...
Microelectronic Engineering 137, 141-145, 2015
82015
Numerical analysis of deterministic switching of a perpendicularly magnetized spin-orbit torque memory cell
RL de Orio, J Ender, S Fiorentini, W Goes, S Selberherr, V Sverdlov
IEEE Journal of the Electron Devices Society 9, 61-67, 2020
72020
Effects of sidewall scallops on the performance and reliability of filled copper and open tungsten TSVs
L Filipovic, RL de Orio, S Selberherr
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
72014
Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress
RL de Orio, H Ceric, S Selberherr
Journal of Computational Electronics 7 (3), 128-131, 2008
72008
Coupled spin and charge drift-diffusion approach applied to magnetic tunnel junctions
S Fiorentini, J Ender, S Selberherr, RL de Orio, W Goes, V Sverdlov
Solid-State Electronics 186, 108103, 2021
62021
On the material depletion rate due to electromigration in a copper TSV structure
RL de Orio, S Gousseau, S Moreau, H Cerice, S Selberherr, A Farcy, ...
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW …, 2014
62014
The effect of copper grain size statistics on the electromigration lifetime distribution
RL de Orio, H Ceric, J Cervenka, S Selberherr
2009 International Conference on Simulation of Semiconductor Processes and …, 2009
62009
Effects of sidewall scallops on open tungsten TSVs
L Filipovic, RL de Orio, S Selberherr, A Singulani, F Roger, R Minixhofer
2014 IEEE International Reliability Physics Symposium, 3E. 3.1-3E. 3.6, 2014
52014
Effect of lines and vias density on the BEOL temperature distribution
RO Nunes, RL de Orio
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2018
42018
Process and reliability of SF6/O2 plasma etched copper TSVs
L Filipovic, RL de Orio, S Selberherr
2014 15th International Conference on Thermal, Mechanical and Mulit-Physics …, 2014
42014
Process and performance of copper TSVs
L Filipovic, RL de Orio, S Selberherr
Proceedings of the 10th Workshop of the Thematic Network on Silicon on …, 2014
42014
Impact of intermetallic compound on solder bump electromigration reliability
H Ceric, AP Singulani, RL De Orio, S Selberherr
2013 International Conference on Simulation of Semiconductor Processes and …, 2013
42013
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Articles 1–20