| Observation of conducting filament growth in nanoscale resistive memories Y Yang, P Gao, S Gaba, T Chang, X Pan, W Lu Nature communications 3, 732, 2012 | 1154 | 2012 |
| Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application YC Yang, F Pan, Q Liu, M Liu, F Zeng Nano letters 9 (4), 1636-1643, 2009 | 975 | 2009 |
| Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films F Pan, C Song, XJ Liu, YC Yang, F Zeng Materials Science and Engineering: R: Reports 62 (1), 1-35, 2008 | 788 | 2008 |
| Electrochemical dynamics of nanoscale metallic inclusions in dielectrics Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ... Nature communications 5, 4232, 2014 | 627 | 2014 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 573 | 2019 |
| A comprehensive review on emerging artificial neuromorphic devices J Zhu, T Zhang, Y Yang, R Huang Applied Physics Reviews 7 (1), 2020 | 540 | 2020 |
| Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics J Zhu, Y Yang, R Jia, Z Liang, W Zhu, ZU Rehman, L Bao, X Zhang, Y Cai, ... Advanced Materials 30, 1800195, 2018 | 434 | 2018 |
| Engineering incremental resistive switching in TaO x based memristors for brain-inspired computing Z Wang, M Yin, T Zhang, Y Cai, Y Wang, Y Yang, R Huang Nanoscale 8, 14015-14022, 2016 | 298 | 2016 |
| Nanoscale resistive switching devices: mechanisms and modeling Y Yang, W Lu Nanoscale 5 (21), 10076-10092, 2013 | 288 | 2013 |
| Brain-inspired computing with memristors: Challenges in devices, circuits, and systems Y Zhang, Z Wang, J Zhu, Y Yang, M Rao, W Song, Y Zhuo, X Zhang, ... Applied Physics Reviews 7 (1), 011308, 2020 | 277 | 2020 |
| Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films YC Yang, C Song, XH Wang, F Zeng, F Pan Applied Physics Letters 92 (1), 2008 | 274 | 2008 |
| Nonvolatile resistive switching memories-characteristics, mechanisms and challenges PAN Feng, C Chao, Z Wang, Y Yang, Y Jing, Z Fei Progress in Natural Science: Materials International 20, 1-15, 2010 | 268 | 2010 |
| Complementary resistive switching in tantalum oxide-based resistive memory devices Y Yang, P Sheridan, W Lu Applied Physics Letters 100 (20), 2012 | 263 | 2012 |
| Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks Q Duan, Z Jing, X Zou, Y Wang, K Yang, T Zhang, S Wu, R Huang, ... Nature communications 11 (1), 3399, 2020 | 212 | 2020 |
| Dynamical memristors for higher-complexity neuromorphic computing S Kumar, X Wang, JP Strachan, Y Yang, WD Lu Nature Reviews Materials 7 (7), 575-591, 2022 | 201 | 2022 |
| Oxide heterostructure resistive memory Y Yang, SH Choi, W Lu Nano letters 13 (6), 2908-2915, 2013 | 195 | 2013 |
| Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device C Chen, YC Yang, F Zeng, F Pan Applied Physics Letters 97 (8), 2010 | 191 | 2010 |
| Roadmap on emerging hardware and technology for machine learning K Berggren, Q Xia, KK Likharev, DB Strukov, H Jiang, T Mikolajick, ... Nanotechnology 32 (1), 012002, 2020 | 174 | 2020 |
| Probing nanoscale oxygen ion motion in memristive systems Y Yang, X Zhang, L Qin, Q Zeng, X Qiu, R Huang Nature communications 8 (1), 15173, 2017 | 162 | 2017 |
| Memristive physically evolving networks enabling the emulation of heterosynaptic plasticity. Y Yang, B Chen, WD Lu Advanced Materials (Deerfield Beach, Fla.) 27 (47), 7720-7727, 2015 | 156 | 2015 |
Ilia ValovResearch Centre Juelich, RWTH-AachenGeverifieerd e-mailadres voor fz-juelich.de
