Matthew T. Hardy
Matthew T. Hardy
Electronics Science and Technology Division, Naval Research Laboratory
Verified email at
Cited by
Cited by
High-resolution electrohydrodynamic jet printing
JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ...
Nature materials 6 (10), 782-789, 2007
Superluminescent diodes by crystallographic etching
MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ...
US Patent App. 12/913,638, 2011
Group III-nitride lasers: a materials perspective
MT Hardy, DF Feezell, SP DenBaars, S Nakamura
Materials Today 14 (9), 408-415, 2011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate
YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ...
Applied physics express 2 (8), 082102, 2009
444.9 nm semipolar (112 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ...
Applied Physics Letters 100 (2), 2012
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ...
Applied Physics Letters 101 (12), 2012
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding
KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ...
Applied Physics Express 2 (7), 071003, 2009
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ...
Applied Physics Letters 103 (8), 2013
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy
PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ...
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells
CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ...
Applied Physics Letters 99 (24), 2011
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates
A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ...
Applied Physics Letters 103 (15), 2013
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures
MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ...
Applied Physics Letters 100 (20), 202103-202103-4, 2012
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
m-Plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching
MT Hardy, KM Kelchner, YD Lin, PS Hsu, K Fujito, H Ohta, JS Speck, ...
Applied Physics Express 2 (12), 121004, 2009
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...
Applied Physics Express 13 (6), 065509, 2020
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
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